Young Pil Kim received the B.S. (1990) in physics from Korea Institute of Technology, Taejon, Korea, the M.S. (1992) in physics from Korea Advanced Institute of Science and Technology (KAIST), Taejon, Korea, and the Ph.D. (1998) in materials science and engineering from the KAIST. From 1998, he has been a member of technical staff at Semiconductor R&D Center of Samsung Electronics. His research interests reliability issues in device integration including dielectric breakdown, hot carrier degradation, and junction leakage degradation in device, especially DRAM, scaling.