Soon-Moon Jung received the B.S. (1984) and the M.S. (1986) in materials science & engineering from Hanyang University, Korea, and the Ph.D. (1996) in materials science & engineering from University of Florida. He joined Samsung Electronics Co, Semiconductor Division in 1986. He has been engaged in research and development of Static RAM. In 1996, he was a circuit designer for high speed synchronous SRAM , 40OMHZ 4M DDR SRAM. He had developed new interconnection capacitance modeling method for HSPICE. 97-98 he developed the process of 250M Hz 4M Sychronous Pipeline SRAM as a project leader. 99-00, he was responsible for developing the process integration and producing of 0.22 µm Low Power Full CMOS SRAM. Currently, he is responsible for developing the process of 1 Transistor SRAM based on DRAM cell technology.