J.H. Stathis received the bachelor's in physics (Summa Cum Laude) from Washington University in St. Louis (1980), and the Ph.D. in physics from the MIT (1986), joining the IBM Research Division the same year. The focus of his work at IBM has been the electrical properties of point defects in SiO2, including basic studies of defect structure using magnetic resonance and electrical measurement techniques, and the role of defects in wearout and breakdown. He is the author of more than 70 research papers.