Barry P. Linder received the B.S. (1993) from Pennsylania State University, the M.S and Ph.D. in electrical engineering from the University of CA at Berkeley (1999). Since graduation Dr. Linder has been employed as a Research Staff Memeber at the IBM T. J. Watson Research Center, Yorktown Heights, NY. His studies have included plasma processsing, plasma implantation, and gate oxide breakdown. His recent work has centered on the breakdown of ultra-thin gate oxides, including the statistics of breakdown phenomenon and post-breakdown conduction. Dr. Linder is an IEEE member.