Hyngtak Kim received the B.S. (1996) in electrical engineering from the Seoul National University, Seoul, Korea. On completion of military service in 1998, he is currently working toward the Ph.D in electrical engineering at Cornell University. His research interests include GaN base devices and circuits for high frequency and high power applications. His emphasis has been fabrication, characterization and modeling of AlGaN/GaN HEMTs. He is currently investigating the degradation mechanism of GaN devices.