Salman, A. [3D.1]

Akram Salman received the B.S. (1996) from the University of Alexandria (Egypt) and the M.S. (1999) from the Arab Academy for Science and Technology (Egypt), both in electrical engineering. He is currently a Ph.D. student at George Mason University, doing research in the areas of ESD and hot electron reliability (and their interdependence) of deep sub-micron bulk and SOI CMOS technologies. During the summer 2000 he worked at IBM Microelectronics on a student internship. His research involves experimental characterization and damage profiling by adapting and further developing a variety of techniques, and extensive numerical and compact modeling.

Salman, A. [3D.1]

Akram Salman received the B.S. (1996) from the University of Alexandria (Egypt) and the M.S. (1999) from the Arab Academy for Science and Technology (Egypt), both in electrical engineering. He is currently a Ph.D. student at George Mason University, doing research in the areas of ESD and hot electron reliability (and their interdependence) of deep sub-micron bulk and SOI CMOS technologies. During the summer 2000 he worked at IBM Microelectronics on a student internship. His research involves experimental characterization and damage profiling by adapting and further developing a variety of techniques, and extensive numerical and compact modeling.

Salman, A. [3D.1]

Akram Salman received the B.S. (1996) from the University of Alexandria (Egypt) and the M.S. (1999) from the Arab Academy for Science and Technology (Egypt), both in electrical engineering. He is currently a Ph.D. student at George Mason University, doing research in the areas of ESD and hot electron reliability (and their interdependence) of deep sub-micron bulk and SOI CMOS technologies. During the summer 2000 he worked at IBM Microelectronics on a student internship. His research involves experimental characterization and damage profiling by adapting and further developing a variety of techniques, and extensive numerical and compact modeling.