Kwang-Hoon Oh received the B.S. (1990) and M.S. (1992) in electrical engineering from Seoul National University, Korea. He joined Samsung Electronics in 1992, where he worked on the design and development of Power MOSFETs and IGBTs. Since 1997, he has been pursing the Ph.D. at Stanford University. His current research interest is in the area of electro-thermal modeling, especially ESD modeling for deep sub-micron technologies with applications to ICs.