D. H. Kim received the B.S. (1991) in geology from Seoul-National University, and M.S. (1994) in applied physics from Yeon-Sei University, Republic of Korea. He has been a process integration engineer of DRAM since 1994 in Samsung Electronics, Co., Ltd. He took part in the successful development of giga-scaled 256M DRAM and 1G DRAM, and is now involved in the development of Low-Power SRAM. His current activities and research interests are the process integration and the device analysis such as memory device reliability, memory cell technology, sub-0.12 µm CMOS technology, yield improvement of Sub-0.12 µm SRAM development.