Mariko Takayanagi received the B.S. (1987) in physics from International Christian University. She joined the Toshiba Research and Development Center, Kawasaki, Japan, in 1987, where she was engaged in the research on the characterization of the process and the electrical properties in Si MOS devices, including the diffusion mechanism and carrier transport in poly-Si, the analysis of band-to-band tunneling current in MOSFETs. Since 1991, she has been working in ULSI Device Engineering Lab, Toshiba, where she has been engaged in the research and development of Field Programmable Gate Array, the hot carrier degradation in Si MOSFETs, the development of the poly-Si/W stacked gate electrode technology, oxynitride gate dielectrics and so on. She is currently with System LSI Research and Development Center, Toshiba Corp. Semiconductor Co., Yokohama, Japan.