C H Ling received the B.Sc. (1968) and Ph.D. (1972) in electrical engineering from Imperial College of Science, Technology, and Medicine, London, U.K. He has worked on III-V, metal, chalcogenide, and dielectric thin films. His current interests are in thin oxide and hot-carrier degradation studies in MOS transistors. For four years, he was an R&D engineer at the British Telecom Lab, Martlesharn Heath, U.K. Currently, he is with the Dept. of Electrical and Computer Engineering, National University of Singapore.