Igor Polishchuk received the B.Sc. (1997) in physics from the CA Institute of Technology and the M.S. (1999) in electrical engineering from the University of CA, Berkeley; where he is currently pursuing the Ph.D. His research interests include reliability of ultra-thin gate oxides and high-K dielectrics, metal gate technology, and carrier transport modeling in MOS devices. Igor Polishchuk received the California Fellowship in Microelectronics in 1997, and is currently a holder of the SRC/NIST Graduate Fellowship.