four-hours reviewing 2002 publications on four hot topics,
$75****requires WIN98SE,ME, 2000,XP & uptodate Internet Explores 5.0 or later
Key Issues on Cu-Low k Interconnect Reliability
EM characteristics of Cu/oxide damascene structures (16 papers).
Multi-modal failure statistics
Threshold jLc product
Void evolution and morphology
Improvement on EM reliability
Impact of low k dielectrics on EM reliability (7 papers)
Failure mode and failure statistics
Interfacial delamination
Thermal stress and mechanical strength
Stress induced void formation (8 papers)
Characteristics and mechanism
Effect of interconnect geometry
Suppression of stress voiding
Packaging reliability of Cu-low k interconnects (3 papers)
High-k reliability in 2002
Time-dependent dielectric breakdown (TDDB)
Charge trapping and Negative Bias Temperature Instability (NBTI)
Hot carrier-induced degradation
Impact of processing on high-k reliability
Non-Volatile Memory Reliability:2002 Publications
Floating-Gate Memories
Anomalous SILC
Program/Erase Operations and Cycling Damage
Nitride Storage Memories
Thick oxide localized storage
Thin oxide planar storage
Future Memory Technologies
Nanocrystal
Ovonic Unified Memory
ESD
RF ESD Design
Novel ESD Devices
Device Effects
ESD Modeling/Simulation
ESD Test Methods
New ESD Phenomena
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