ESD High Current Phenomena, Modeling and Process Effects

Gianluca Boselli, Ph.D.
Texas Instruments

In this tutorial, the physics of CMOS components under high current conditions to derive the ESD protection circuit design will be discussed. Special emphasis will be devoted to the process aspects and the modeling Special emphasis will be devoted to the process aspects and the modeling efforts to confidently predict the high current behavior. This is useful for understanding protection device behavior and for optimizing protection circuit networks.

Gianluca Boselli

Gianluca Boselli is a member of the technical staff of the Silicon Technology Development of Texas Instruments, Dallas, TX. His current work focuses on ESD and latch-up implications for physical design (development of layout rules and ESD protection structures in advanced technologies) with special emphasis on process aspects and modeling. Gianluca completed his engineering studies at the Faculty of Electronic Engineering at the University of Parma in 1994. In the 1995 he spent six months at the IXL Laboratory of Microelectronics, at the University of Bordeaux 1 (France). In 1997 he started his position as research fellow in the IC-technology, Devices and Reliability (IDR) group at the University of Twente working towards his Ph.D.. During this period he published several papers in the field of ESD and he has been awarded with the "Best Paper Award on behalf of Microelectronics Reliability Journal" at the 22nd International Conference on Microelectronics, Nis, Yugoslavia, May 2000. In February 2001 he joined Texas Instruments Inc., Dallas. Gianluca serves on the Technical Program Committee (TPC) of the EOS/ESD Symposium.