IEEE IRPS 2004
RELIABILITY PHYSICS TUTORIALS 
Sunday & Monday April 25-26


        

(Two registration choices & Two sets of Tutorial Notes)
Chair: Ron Lacoe, Aerospace Corporation 
(310) 336-0118; ronald.c.lacoe@aero.org
Vice Chair: James Stathis, IBM SRDC

Sunday, April 25, TUTORIALS · 8 a.m. — 5:00 p.m., Civic Plaza

General Reliability     Room: TBD

101.  Introduction to Reliability
Vijay Reddy, Texas Instruments 
abstract
8:00 – 11:30 

Design Practices    Room: TBD

111.  Product Reliability Challenges
for VLSI Technology
R. Bolam, IBM  
abstract
(1:30 - 3:00) 
112.  Effect of Reliability Mechanisms
on VLSI Circuit Function
W. Ellis, IBM
abstract
 (3:30 - 5:00) 

ESD    Room: TBD

121. ESD & Latchup in Advanced Technologies
S. Voldman, IBM
abstract		 (8:00 - 11:30)
122. ESD Protection Design in CMOS
T. Maloney, Intel
abstract 		(1:30 - 3:00)
123. ESD Testing: HBM to vf-TLP
H. Gieser, Fraunhofer IZM
abstract 		(3:30 - 5:00)

High K Dielectric    Room: TBD

131.   Material Properties & Local Phenomena in High K Dielectrics
G. Wilk, ASM America
abstract
(8:00 - 9:30) 
132.   Interfacial Reactions & Stability of High K Dielectrics & Metals
R. Wallace, U.T. Dallas
abstract
(10:00 - 11:30)
133.   Deposition & Defect Characterization of High K Material
J. Conley, Sharp
abstract
(1:30 -3:00)
134.   Defect Transport of High K Dielectrics
E. Cartier, IBM
abstract
(3:30 - 5:00)

NBTI    Room: TBD

141.   NBTI: Physics, Materials & Process Issues
D. Schroder, Arizona State University
abstract
(8:00 - 9:30)
142.   Device & Circuit Issues
A. Krishnan, Texas Instruments
abstract
(10:00 - 11:30)

SER    Room: TBD

151.   Introduction to SER & Testing Challenges
R. Velazco, TIMA
abstract
(1:30 - 3:00)
152.   Software Approaches to Mitigating SERs
F. Faure, TIMA
abstract
(3:30 - 4:15)
153.   Evaluating SERs in FPGAs
M. Wirthlin, BYU
abstract
(4:15 - 5:00)

Exhibit Presentations     Room: TBD

160.   Exhibitors will have the opportunity
to present information on their
products during this session.
(1:30 - 5:00)

Monday, April 26, TUTORIALS · 8 a.m. — 5:00 p.m., Civic Plaza

Future CMOS    Room: TBD

201.   Trends & Challenges in Device Scaling & Circuit Design
D. Cox, IBM  
abstract
(8:00 - 9:30) 
202.   Future Direction & Challenges for Flash Memory Scaling
G. Atwood/S. Lai, Intel  
abstract
(10:00 - 11:30) 
203.   Reinventing CMOS
T. Dellin, Sandia National Laboratory
abstract
(1:30 - 5:00) 

Gate Dielectrics    Room: TBD

211.   Oxide Breakdown Methods & Models
R. Vollertsen, Infineon
abstract
(8:00 - 9:30) 
212.   Oxide Breakdown in CMOS Devices & Circuits
J. Stathis, IBM
abstract
(10:00 - 11:30) 
213.   Multiple-Breakdown Statistics & Post-Breakdown Reliability Methodology
J. Suñé, U. Auto. Barcelona and E.Y. Wu, IBM
abstract
(1:30 - 3:00) 
214.   Reliability Issues in High-K Dielectrics. - What is Different from SiO2
H. Satake, Toshiba
abstract
(3:30 - 5:00) 

Low K/Cu Interconnects    Room: TBD

221.   Low K/Cu Integration
G. Dixit, Applied Materials
abstract
(8:00 - 9:30) 
222.   Planarization for Cu/low k Interconnects
Wei-Yung Hsu, Ph.D., Applied Materials
abstract
(10:00 - 11:30) 
223.   Electromigration Reliability
P. Ho, U.T.
abstract
(1:30 - 3:00) 
224.  Via Stress Migration
G. Alers, Novellus
abstract
(3:30 - 5:00) 

RF/MMIC Reliability    Room: TBD

231.   Microwave/RF MMIC Reliability Physics
& Test Methods
J. Scarpulla, Aerospace Corp
abstract
(8:00 - 9:30) 
232.   MMIC Manufacturing &
Packaging Reliability Issues
W. Roesch, TriQuint
abstract
(10:00 - 11:30) 
233.   SiGe & Si RF CMOS Reliability
W. Abadeer, IBM
abstract
(1:30 - 3:00) 
234.   HBT Reliability:
Comparison SiGe, GaAs & InP Technology
F. Guarin IBM
abstract
(3:30 - 5:00) 

Failure Analysis    Room: TBD

241.   Failure Analysis: Current Processes & Future Needs
L. Wagner, TI
abstract
(8:00 - 9:30) 
242.   Failure Site Isolation Methods
D. Vallett, IBM & E. Cole, Sandia National Laboratory
abstract
(10:00 - 11:30)