Fundamentals of Latchup and ESD plus ESD and Radio Frequency



	Fundamentals of Latchup and ESD plus ESD and Radio Frequency

	Steven H. Voldman, IBM

	Part I: Latchup and ESD: In this presentation, the fundamentals of latchup to modern latchup issues will be discussed. The curriculum will include latchup physics, test structures, characterization, process and technology issues, and new latchup issues in the industry today. The topic will then change to fundamentals of ESD. Background is first given on ESD physics, electro-thermal and statistical models. This will address CMOS, Silicon on insulator (SOI) and Silicon Germanium (SiGe). Part II : RF ESD This is followed by ESD devices, circuits, and process issues in RF CMOS, RF BiCMOS silicon germanium (SiGe) technology, and Gallium Arsenide. This will extend the discussion of ESD from the first section.



Steven H. Voldman Steven H. Voldman is an ESD/Latchup engineer/scientist in IBM's RF Silicon Germanium development team. He received his B.S. in Eng. Science from the Univ. of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from MIT; MS Eng. Physics (1986) and Ph.D EE (1991) from the Univ. of Vermont under IBM's Resident Study Fellow program. Dr. Voldman recently accepted the first IEEE Fellow in ESD phenomenon field for "contributions to electrostatic discharge protection in CMOS, SOI and SiGe technologies" at the IRPS 2003 in Dallas, Texas. As a reliability/device engineer since 1982, his work involved bipolar and CMOS SRAM SER, MOSFET GIDL, hot electron, epitaxy/well design, CMOS latchup, and ESD. He was responsible for defining the IBM ESD/latchup strategy for CMOS, BiCMOS and RF CMOS from 1986 to 2004. Voldman served as SEMATECH ESD Chair (1996-2000), EOS/ESD TPC, Vice Chair, and General Chair (2000-2003); and presently serving as the IRPS ESD/Latchup Chairman (20003, 2004), EOS/ESD Symposium ESD/Latchup Chairman (2004-2005), Singapore's International Physical and Failure Analysis (IPFA) ESD/Latchup Chairman (2003-2005), ESD Assoc. Board of Directors, ESD TLP Work Group Standards Chairman, ESD Education Committee, as well as serving on the technical program committees of the Bipolar Circuit Technology Meeting (BCTM), Taiwan Electrostatic Discharge Association (T-ESDA), and the Taiwan International Conference of Electromagnetic Compatibility (ICEMAC). Voldman has provided ESD lectures for universities for the MIT Lecture Series, Taiwan National Chiao-Tung University, and provided the first Keynote address for the NCTU Taiwan ESD Conference 2003. He presently has over 135th issued US patents, and over 100 publications.