IEEE IRPS 2005
RELIABILITY PHYSICS TUTORIALS 
Sunday & Monday April 17-18


        

(Tutorial registration choices: Sunday, Monday, or both & a set of Tutorial Notes for each day)

Chair: John Suehle, NIST 
(301) 975-2247; john.suehle@NIST.gov

Vice Chair: Giuseppe La Rosa, IBM


Sunday, April 17, TUTORIALS · 8 a.m. — 5:00 p.m., San Jose McEnery Convention Center
 


  100. Characterization     
 

101.  Wafer Level Reliability Montoring
A. Martin (Infineon) 
abstract
8:00 – 9:30 
102.  Process Induced Damage in Advanced CMOS
C. Cheung (Rutgers) 
abstract
10:00 – 11:30 


  110. Reliability by Design
    
 

111.  Reliability mechanisms and VLSI circuit design
W. Ellis (IBM)  
abstract
(1:30 - 3:00) 


  120. Circuit Technologies
 

121. Mixed Signal Circuit Reliability
C. Schluender (Infineon)
abstract
(8:00 - 9:30)
122. HV CMOS Device Reliability
P. Moens (AMI) / G. Van den bosch (IMEC)
abstract
(10:00 - 11:30)


  130.  Failure Analysis
 

131.  Failure Analysis Fundamentals and Advanced FA for Nanotechnology
C. Henderson (Semitracks)
abstract
(1:30 - 5:00) 


  140.  ESD    
 

141. ESD & Latchup Fundamentals And RF Technologies
S. Voldman (IBM)
abstract
(8:00 - 11:30)
142. ESD in sub 100 nm CMOS
G. Boselli (TI)
abstract
(1:30 - 3:00)


  150.  Systems Reliability
 

151.  Reliability Science - It's Role in Technology Development
K. Seshan (Intel)
abstract
(8:00 - 9:30) 


  160.  High k Dielectrics
 

161.   High K Gate Dielectrics: Material Physics
G. Lucovsky (NC State)
abstract
(1:30 - 3:00) 



Monday, April 18, TUTORIALS · 8 a.m. — 5:00 p.m., San Jose McEnery Convention Center
 


  200.  Ultra-thin Dielectrics
 

201.   Ultra-thin Oxide Reliability
E. Wu (IBM) / J. Suñé (U. Autónoma. de Barcelona
abstract
(8:00 - 9:30) 
202.   Breakdown in Devices and Circuits
B. Kaczer (IMEC)
abstract
(10:00 - 11:30) 


  210.  NBTI
 

211.   NBTI: Modeling
A. Alam (Purdue)
abstract
(1:30 - 3:00) 
212.   NBTI: Process, Device, and Circuit
A. Krishnan (TI)
abstract
(3:30 - 5:00) 


  220.  Memories
 

221.   FLASH: NOR Reliability
A. Spinelli (Politecnico di Milano)
abstract
(8:00 - 9:30) 
222.   FLASH: NAND Reliability
R. Shirota (Toshiba)
abstract
(10:00 - 11:30) 
223.   DRAM Reliability
C. Mouli (Micron)
abstract
(1:30 - 3:00) 


  230.  High k Dielectrics
 

231.   High-k Gate Dielectrics:
Characterization
G. Bersuker (SEMATECH)
abstract
(3:30 – 5:00)  


  240.  SER
 

241.   SER: From Fundamentals
to Testing and Design
R. Baumann (TI)
abstract
(8:00 – 11:30)  


  250.  Cu/Low-k Reliability
 

251.   Electromigration reliability in Cu/Low
P. Ho (UT)
abstract
(1:30 - 3:00) 
252.   Reliability Issues in Advanced Cu/Low-k
Hazara Rathore and Du Nquyen (IBM)
abstract
(3:30 - 5:00) 


  260.  Beyond CMOS
 

261.   Reinventing CMOS
T. Dellin (Quick Start Micro Training)
abstract
(8:00 - 11:30) 
262.   Directions in Nanoelectronics
H. Hosack/J. Hutchby (SRC)
abstract
(1:30 - 2:30) 
263.   Molecular Electronics
C. Richter (NIST) D. Stewart (HP)
abstract
(3:30 - 5:00)