Interconnect dimension and current waveform effects on electromigration performance

Electromigration (EM) is an interconnect degradation phenomenon driven by an electrical flow which critically affects the overall circuit reliability. Since the allowable current density of the interconnect is mainly determined by EM performance, understanding and enhancing the EM lifetime is essential to manufacture high performance semiconductor chips in a reliable way. In this tutorial, we review the effect of interconnect dimension (length and width) and current waveform (pulsed DC and AC) on the EM performance. Both are the key factors determining EM current rules and important to maximize interconnect usage for 45 nm and beyond technologies. In order to help general audience's understanding on these, we also address EM basics including EM physics, statistics, Black's equation, and EM failure modes.

Young-Joon Park

Young-Joon Park received the B.S. degree in metallurgical engineering from Seoul National University, Seoul, Korea in 1986 and the M.S. and Ph. D. degree in material science and engineering from KAIST, Seoul, Korea. Dr. Park joined Texas Instruments Inc., Dallas, Texas in 2002 and has been working on the Cu/low-k interconnect reliability. Before joining TI, he had researched at MIT as a post doctoral associate from 1995 till 1996, developed an electromigration simulation algorithm. Also he had worked at Korean governmental research institutes for 9 years as a principal research scientist (final position) in the fields of BEOL process and reliability, microstructure and fabrication of bulk and thin films, laser processing of hard films, and simulations of electromigration reliability. Dr. Park has authored or co-authored more than 40 papers and holds more than 10 patents issued or filed. Dr. Park has served IRPS as a committee member in 2002, 2003, and 2005.