Reliability Challenges in Integrated High Voltage Devices
Peter Moens, AMI
Integrated medium-to-high voltage transistors with a breakdown voltage between 20 and 100V, are widely used in automotive, industrial and even medical applications. These transistors are used as an interface between the sub-micron digital CMOS and the analog outside world. Often, the transistors have to switch relatively large currents (1-10A), and as such power dissipation is a prime concern.
In this tutorial, the challenges in device reliability for integrated smart power devices are highlighted. The most common types of devices and their use in applications is presented and discussed (DeMOS, LDMOS, VDMOS, IGBT, …). Typical device reliability problems are highlighted. These are, amongst others : DC hot carrier, robustness under ESD-like events, switching of different types of loads, thermal modeling, etc… The different measurement techniques used to assess the complete reliability behavior of integrated power devices, are discussed in detail. A methodology to construct the total Safe Operating Area (covering electrical, thermal and hot carrier effects) is given.
Peter Moens
Dr. Peter Moens received a M.S. and a Ph.D. in solid state physics from the University of Gent, Belgium, in 1990 and 1993 respectively. From 1993 till 1996, he worked as a post-doctoral fellow in collaboration with Agfa-Gevaert, Mortsel Belgium on the electron capture efficiency of silver halide emulsions. In 1996, he joined AMI Semiconductor, Oudenaarde, Belgium where he is involved in the development of smart power technologies and devices. His present activities are focusing on advanced device concepts and the reliability of integrated power devices. He is author or co-author of over 70 papers in international journals and proceedings and issued several patents. He is chairman of the HV reliability sub-committee of IRPS and serves as a technical program committee member for the International Symposium on Power Semiconductor Devices (ISPSD).