Ogawa, Ennis T.

Ennis T. Ogawa is currently working in the Advanced Materials Reliability R&D Group under Silicon Technology Development (SiTD) at Texas Instruments (TI), Inc. in Dallas, TX. He received his B.S. degree in Physics from Stanford University in 1986 and his Ph.D. in Physics at The University of Texas at Austin in 1994. Following his doctoral degree, he worked as a postdoctoral fellow in the Interconnect and Packaging Laboratory, directed by Prof. Paul S. Ho, at The University of Texas at Austin and continued as a Research Associate until mid-2001. Since then, he has been at TI. His interests at TI pertain to the reliability of Cu/low-k backend Si technology that involve issues such as electromigration, stress-induced voiding, intermetal and interlevel dielectric reliability, and thermal management. An active participant in IRPS activities, he is also an author of several journal and conference articles and filed numerous patents in interconnect reliability. He remains very fascinated by fatherhood.