Electrically programmable fuse - Programming, Reliability and Applications

Electrically programmable fuse (eFUSE) has become the preferred method for invoking various on-chip functions such as redundancy, security etc. Multiple programming mechanisms have been reported in the literature including electromigration, thermal rupture, agglomeration and melt-segregation. All reported methods of programming involve very high current densities and high temperatures not typically seen in other elements thus resulting in considerable reliability challenges. This could manifest itself in the stability of eFUSE as well as possible collateral damage to the fuse surrounding elements. This tutorial will provide an overview of eFUSE, the various programming mechanisms and its applications. Reliability methodology used to evaluate eFUSE will be discussed and the impact of programming on reliability will be analyzed.

C. Kothandaraman

C. Kothandaraman obtained his bachelor's degree from the Indian Institute of Technology, Madras and his doctorate in Applied physics and Materials science at Columbia University, New York in 1996. He has worked on CMOS imaging sensors that resulted in the CDR system, the leading digital imaging device for intra-oral radiography. Subsequently he joined the Logic and Embedded Alliance with Siemens Microelectronics and IBM in East Fishkill, NY where he pioneered a positive application of electromigration, that lead to the creation of eFUSE technology. He is currently with IBM and is focused on the research & development of eFUSE and its applications to autonomic chips. Dr. Kothandaraman has authored over 20 technical publications and holds over 10 U.S. and international patents.

C. E. Tian

C. E. Tian obtained her bachelor's degree at Tsinghua University in Beijing, China; and her doctorate in Materials Science at Columbia University, New York in 1998. She joined the technology reliability division at IBM in East Fishkill, NY, where she has been working on various aspects of reliability of advanced CMOS technologies, including BEOL dielectric, passives, NBTI and Hot-carrier degradation. She is currently focused on the reliability of eFUSE and NBTI.