NBTI YEAR-IN-REVIEW

An overview of latest (2006) findings on the physics of the NBTI damage and relaxation effects as well as their impact to circuit level operation will be provided. Special focus will be spent on recently proposed stress/test NBTI methodologies (OTF vs. Fast Switching, etc) and their impact to EOL projections.

Giuseppe LaRosa

Giuseppe La Rosa is a Senior Development Engineer at IBM Semiconductor Research and Development Center (NY). Since he joined IBM he has been working in the development of advanced DRAM/Logic submicron technologies. His main interests are in the area of submicron transistor reliability and device physics including Hot Carrier Effects. He holds a Laurea in physics (Italian Doctorate) from the University of Catania and an M.S. in electronic materials from MIT and an M.S. in physics from Northeastern University. He is a member of IEEE Electronic Devices Society.