Announcement:

Program for 2003 International Reliability Physics Symposium

Visit www.irps.org for more details.

Sessions Include:

Circuit / transistor reliability: 12 papers including soft-breakdown and NBTI.

High-K dielectrics: 6 papers on hafnium, zirconium and aluminum oxides.

Ultra-thin gate oxides: 10 papers on devices with sub-1.5nm gate dielectrics.

Copper reliability: 7 papers on copper electromigration and stress migration.

Low-k dielectric reliability: 7 papers on inter-level dielectrics and etch stop layers.

SiGe and Compound Semiconductors: 11 papers.

Soft-error rates and memory: 10 papers.

ESD and Packaging: 13 papers.

Failure analysis: 7 papers.

Product reliability: 7 papers.

MEMS reliability: 5 papers.

Latch-up: 5 papers.

New to IRPS 2003:

Late breaking news: 90nm quadruple gate dielectric circuits for SoC applications

Reliability-year-in-review seminar: review of highlights in Cu/low-k, High-k gates, Non-volatile memories and ESD/EOS.

Virtual IRPS on DVDROM:  In case you miss 2003 or a previous year.

Additional Highlights:

-- Tutorial program with topics on: Gate dielectric reliability, copper/low-k, SER.

-- Workshops: Copper/low.

IRPS 2003