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"A New Physical Mechanism for Soft Errors in Dynamic Memories;"
by T. C. May and M.H. Woods

OUTSTANDING PAPERS

"Model for MOS Field Time Dependent Breakdown"
by S.P. Li, S. Prussin, and J. Maserjias.

"New Acceleration Factors for Temperature Humidity Bias Testing,"
by. N. L. Sbar and R P. Kozakiewicz.

"The Reduction of Purple Plague and Electromigration in Hydrogen Environments,"
by Da Yuan Shih, and P. J. Ficalora.

BEST PAPER:

"Diagnosis of Hybrid Micro Electronics Using Transmission Acoustic
Microscopy,"
by Chen S. Tsai, Chin C. Lee, and Jung K. Wang.

OUTSTANDING PAPER:

"Measurement of Alpha Particle Radioactivity in IC Device Packages,"
by E. S. Meieran, P. R Engle, and T. C. May.

BEST PAPER:

"Effects of Silicon Nitride Encapsulation on MOS Device Stability,"
by R C. Sun, J. T. Clemens, and J. T. Nelson

OUTSTANDING PAPERS:

"Electromigration Resistance of Fineline Al for VLSI Applications,"
by S. Vaidya, A. S. Singha, and D B. Fraser

"Parametric Influences on System Soft Error rates,"
by J. W. Peeples and T. J. Every

"Using the Die of an Integrated Circuit to Measure the Relative Humidity Inside Its Encapsulation,"
by R P. Merrit, S. P. Sim, and J. P. Bryant.

BEST PAPER

"Electro-thermomigration in NMOS LSI Devices,"
by L. F. DiChiaro

BEST PAPER AWARD (ONE-ON-ONE)

"Electrostatic Discharge Failures of Semiconductor Devices,"
by B. A. Unger.

OUTSTANDING PAPERS

"Experimental and Mathematical Determination of Mechanical Strains Within Plastic IC Packages, and Their Effects on Devices During Environmental Tests"
by R J. Usell, Jr. and S. A. Smiley.

"Latent-Beta-Radiation Damage in Hermetically Sealed NMOS Devices,"
by J. L. Boyle, R C. McIntyre, R E. Youts, and J. T. Nelson

BEST PAPER

"Electromigration Thermal Analysis and Die Attach,"
by J. Partridge, A. Marquess, and R. Camp

BEST PAPER AWARD (ONE ON ONE)

"Precision VLSI Cross-sectioning and Staining,"
by L. T. Mills and E. W. Sponheimer

OUTSTANDING PAPERS

"Elimination of Silicon Electromigration in Contacts by the Use of an Interposed Barrier Metal,"
by P.A. Gargini, C. C. Tseng, and M. H. Woods

"Soft Error Studies Using a Scanning Source"
by F. J. Henley, and W. G. Oldham

BEST PAPER

"Phenomenological Observations on Electromigration,"
by R W. Thomas & D. W. Calabrese

OUTSTANDING PAPERS

"Aluminum Electromigration Under Pulsed DC Conditions,"
by J. M. Towner & E.P. van deVen

"The Effect of Entrapped Krypton 85 Gas on Device Reliability,"
by D. Fisch, G. Roberts, and T. Mozdzen

BEST PAPER

"Dynamic Fault Imaging of VLSI Random Logic Devices,"
by T.C. May, G.L. Scott, E.S. Meieran, P. Wines, and V. R Rao

OUTSTANDING PAPER

"Characteristics and Reliability of 100 Å Oxides,"
by D. A. Baglee

"Electromigration Induced Damage and Structure Change in Cr-Al/Cu and Al/Cu Interconnection Lines,"
by E. Levine and J. Ketcher

"Sputtered T-Doped Al/Si for Enhanced Interconnect Reliability,"
by F. Fischer & N. Neppl

BEST PAPER

"Electromigration Induced Short Circuit Failure,"
by J. M. Towner

OUTSTANDING PAPERS

"Breakdown Energy of Metal (BEM) - A New Technique for Monitoring Metallization at Wafer Level,"
by C.C. Hong, and D. L. Crook

"The Identification of Human Contaminations in the Manufacture of IC's,"
by R W. Thomas and D. W. Calabrese

"Computer Aided Stress Modeling for Optimizing Plastic Package Reliability,"
by S.K. Groothuis, W. H. Schroen, and M. Murtuza

"Acceleration Factors for Thin Gate Oxide Stressing,"
by J. W. McPherson and D. A. Baglee

"Stress Induced Voids in Aluminum Interconnects During IC Processing,"
by Y. T. Yue and R. V. Taylor

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"Analysis of Product Hot Electron Problems by Gated Emission Microscopy,"
by N. Khurana and C. L. Chiang

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"A Practical VLSI Characterization and Failure Analysis System for the IC User,"
by R King and J. B. Hiatt

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"Dynamic Imaging of Current Conduction in Dielectric
Films by Emission Microscopy,"
by N. Khurana and C. L. Chiang.

OUTSTANDING PAPERS

"Reliability Comparison of FLOTOX and Textured Polysilicon E. Square Proms,"
by N. Mielke, A. Fazio. and H C. Liou

"ESD Phenomena and Protection Issues in CMOS Output Buffers,"
by C. Duvvury, Y. Fong, RN. Rountree and R A. McPhee

BEST PAPER

"Statistical Modeling of Silicon Dioxide Reliability,"
by Jack Lee, Ih-Chin Chen, and Chenming Hu

OUTSTANDING PAPERS

"Statistics for Electromigration Testing,"
by Harry Schafft, James Lechner, Babak Sabi, Mike Mahaney, and Ron Smith

"Detection of Junction Spiking and Its Induced Latch-Up by Emission Microscopy,"
by Siak Chiew Lim and Eng-Guan Tan

OUTSTANDING PAPERS

"Low Voltage Hot-Electron Current Degradation in Deep
Submicrometer MOSFETS",
by J. Chung, M. C. Jeng, J. E. Moon, P.K. Ko, and C. Hu

"MAST Applications Acceleration Factors and Results for VLSI Components"
by D. D. Danielson, G. Marchk, E. Babb and S. Kudva

"Reliability Aspects of Laser Programmable Redundancy: Infrared vs. Green, Polysilicon vs. Silicide"
by J. D. Chlipala and L. M. Scarfone

BEST PAPER

"The Electrical Resistance Ratio (RR) as a Thin Film Metal Monitor",
by W. Baerg, K. Wu. P.W. Davies. G. Dao, and D. B. Fraser

OUTSTANDING PAPER

"Direct Measurement of Stress-induced Void Growth by Thermal Wave Modulated Optical Reflective Imaging",
by W. L. Smith, C. Wells, A. Bivas, F. G. Yost, and J. E. Campbell

BEST PAPER

"Use of the in-Process Bond Shear Test for Predicting Gold Wire Bond Failure Modes in Plastic Packages,"
by Michael Mahaney, Melissa Shell, and Richard Strode

OUTSTANDING PAPER

Evidence for an Incubation Time in Electromigration Phenomena,"
by M. H. Woods, S. C. Bergman and. R. S. Hemmert

IRPS SPECIAL RECOGNITION AWARD

James R. Black ..." For His Pioneering Research in Electromigration."

BEST PAPER

"Rapid Localization of IC Open Conductors Using Charge- Induced Voltage Acceleration (CIVA)",
by E. I. Cole, Jr., and R J. Anderson

OUTSTANDING PAPERS

"Selective Removal of Dielectrics from Integrated Circuits for
Electron Beam Probing,"
by W. Baerg, V.R.M. Rao, and R. Levengood

"Reliability Defect Detection and Screening During
Processing - Theory and Implementation,"
by H. H. Houston and C.P. Clarke

BEST PAPER

"Novel Self-Stressing Test Structures for Realistic High- Frequency Reliability Characterization,"

by Eric S. Snyder, David V. Campbell, Scot E. Swanson. and Donald G. Pierce.

OUTSTANDING PAPER

"Internal Current Probing of Integrated Circuits Using Magnetic Force Microscopy.,"
by Ann N. Campbell, Edward I. Cole, Jr., Bruce A. Dodd and Richard E. Anderson

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"Novel Failure Analysis Techniques Using Photon Probing With a Scanning Optical Microscope"
by Edward I Cole Jr., Jerry M. Soden, James L. Rife. Daniel L. Barton . and Christopher L. Henderson

OUTSTANDING PAPERS

"Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown in Intrinsic Thin SiO2"
by John S. Suehle, Prasad Chaparala, Cleston Messick, William M. Miller, and Kenneth C. Boyko

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by David J. Dumin, Sai Mopuri, Sundar Vanchinathan,
Ronald S. Scott, Raj Subramomiam, and Terry G. Lewis

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by J. Prendergast, J. Suehle, P. Chaparala, E. Murphy, and M. Stephenson

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by R S. Scott, N. A. Dumin, T. W. Hughes, and B. T. Moore

"Impact of Shallow Trench Isolation on Reliability of Buried-and Surface-Channel sub-µm PFET"
by W. Tonti, R Bolam, and W. Hansch

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"A New Physics-Based Model for Time-Dependent- Dielectric-Breakdown"
by B. Schlund, J. Suehle C. Messick, and P. Chaparala

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"Relation Between Yield and Reliability of Integrated Circuits: Experimental Results and Application to Continuous Early Failure Rate Reduction Programs
by F. Kuper, J. van der Pol, E. Ooms, T, Johnson R Wijburg, W. Koster, and D. Johnston