S. Ramey, A. Ashutosh, C. Auth, J. Clifford, M. Hattendorf, J. Hicks, R. James, A. Rahman, V. Sharma, A. St Amour, C. Wiegand, Intel Corp., "Intrinsic Transistor Reliability Improvements from 22nm Tri-Gate Technology"
V. Huard, F. Cacho, X. Federspiel, STMicroelectronics, "Technology Scaling And Reliability Challenges In The Multicore Era"
Best Student Paper 1
C. Miccoli, J. Barber, C. Monzio Compagnoni, J. Kessenich, A. Lacaita, R. Koval, A. Spinelli, A. Goda, Politecnico di Milano, Micron Technology Inc., Intel Corporation, "Resolving Discrete Emission Events: a New Perspective for Detrapping Investigation in NAND Flash Memories"
Best Student Paper 2
D. Angot, V. Huard, X. Federspiel, F. Cacho, A. Bravaix, STMicroelectronics, "Bias Temperature Instability and Hot Carrier Circuit Ageing Simulations Specificities in UTBB FDSOI 28nm Node"
L. Cao, P. Justison, P.S. Ho, The University of Texas at Austin, GLOBALFOUNDRIES, Inc., "Electromigration Reliability of Mn-doped Cu Interconnects for the 28 nm Technology Node"
Best Poster Paper-2
K. Zhang, K. Kobayashi, Kyoto Institute of Technology, "Contributions of Charge Sharing and Bipolar Effects to Cause or Suppress MCUs on Redundant Latches"