90002
by: Crook, D.L., Intel Corp.
title: Evolution of VLSI Reliability Engineering
Complexity trends in VLSI devices
Metal pitch trends in VLSI devices
Qualification monitoring of VLSI devices
Reliability monitoring of VLSI Devices
Scaling effects on electromigration - hot electron and oxide breakdown
Screening effectiveness of VLSI devices
90012
by: Baglee, D.A., Nannemann, L., Huang, C., Intel Corp.
title: Building Reliability Into EPROMs
Building Reliability into (EPROM) products
Charge loss mechanisms in (EPROM) products,description of
DC erase Failures, effect of oxide-nitride oxide (ONO)thickness, cleanliness
DC erase program disturb, DC programming, bake stressing in EPREOMs
Oxide quality, floating gate, control gate, bake stressing in EPROMs
Reliability fallout due to process integration, monitoring, manufacturing control
90020
by: Oates, A.S., AT&T Bell Laboratories
title: Step Spacing Effects on Electromigration
Critical step spacings effect on electromigration
Dielectric gap between adjacent features, effect on electromigration
Electromigration of Al-0.75% Si-0.5% Cu and effect of polycide stack
Electromigration, effect of step spacing
Preferential failure at steps, caused by grain structure change
Preferential failure at steps, caused by metal thinning
Test structures for electromigration study of step spacing
90025
by: Hinode, K., Homma, Y., Hitachi Ltd.
title: Improvement of Electromigration Resistance of Layered Aluminum Conductors
Al grain growth prevented by small grain, refractory metal
Diffusion of refractory elements into the Al layer
Electromigration improvement in Al due to stoichiometric TiN underlayer
Electromigration incubation time in layered Al conductor
Electromigration on fine line AlSi with TiN or W barrier
Electromigration resistance of layered Al conductor
Refactory metals layering degrades electromigration immunity at Al layer
Refactory metals layers suppress Al grain growth & crystal orientation
90031
by: Martin, C.A., Ondrusek, J.C., McPherson, J.W., Texas Instruments Inc.
title: Electromigration Performance of CVD-W/AL-ALLOY Multilayered Metallization
EM degradation mechanism of layered structure of Al-Si and CVD W system
EM failure criteria in multilayered metallization system
EM performance unchanged on Al/Cu lines on rough texture CVD W film
Grain structure dependent prefactor (Ao) impacted by rough textured CVD-W
Role of surface roughness in EM study of multilayer metallization system
90037
by: Crowell, C.R., Shih, C.C., Tyree, V., University of Southern California
title: Simulation and Testing of Temperature Distribution and Resistance Versus Power for Sweat and Related Joule-Heated Metal-on- Insulator Structures
Comparison of thermal models for the SWEAT electromigration test structures
Temperature distribution along SWEAT electromigration test structures
Thermal modeling of wafer level electromigration test structures
90045
by: Cole, E.I. Jr., Sandia National Laboratories
title: A New Techique For Imaging The Logic State of Passivated Conductors: Biased Resistive Contrast Imaging
Biased resistive contrast imaging
CMOS failure analysis technique
Failure analysis of passivated CMOS devices
Logic state imaging of passivated conductors
Nondestructive testing of CMOS devices using biased resistive contrast imaging
Radiation damage to MOS transistors caused by a SEM electron beam
Voltage contrast, disadvantages of using
90051
by: Vollkommer, F., Bohn, H.G., Robrock, K.-H., Schilling, W., Institut fur Festkorperschung
title: Internal Friction: A Fast Technique For Electromigration Failure Analysis
Al metalization, quality control method
Electromigration failure analysis
Electromigration failure analysis using internal friction techniques
Electromigration lifetime, an alternative to conventional tests
Internal friction failure analysis
Internal friction in thin films
Nondestructive testing of Al metalization
90055
by: Hannaman, D.J., Zamani, N., Dhiman, J., Buehler, M.G., California Institute of Technology
title: Error Analysis for Optimal Design of Accelerated Tests
Accelerated test stress selection
Accelerated testing-error analysis for optimal design
Electromigration analysis design of experiment for
Electromigration test stress optimization
Multiple linear regression to obtain optimal stress points
Optimized stress points given limited test time
Test time optimization
90061
by: Banerjee, I., Tracy, B., Davies, P., McDonald, B., Intel Corp.
title: Use of Advanced Analytical Techniques for VLSI Failure Analysis
Crystalline defects, using a TEM for identification of submicron size
Failure analysis using focused ion beam
Failure analysis using scanning electron microscopy
Failure analysis using secondary ion mass spectroscopy
Failure analysis using transmission electron microscopy
Failure mechanism identification and elimination
Metal voids, subsurface imaging using a SEM to detect
Package contamination investigation using SIMS
Resist defect failure analysis using FIB
Thin film structures, using SIMS for characterization of thermal stability of
VLSI failure analysis using advanced analytical techniques
90069
by: Kimball, M., Tektronix, Inc.
title: An Improved Probe Sharpening Techique
Electromigration etching of tungsten probes
Microprobe sharpening technique
Probe TIP Radius, the control of
Probe etching
Probe sharpening technique
Scanning tunneling microscope, probe TIPS for
90072
by: Shirley, C.G., Maston, S.C., Intel Corp.
title: Electrical Measurements of Moisture Penetration Through Passivation
HAST testing for moisture penetration of passivation
HAST, Highly accelerated temperature/humidity stress testing
Metal comb/serpentine structure
Moisture diffusion coefficients of plasma oxides and nitrides
Moisture ingress through various compositions and thicknesses
Moisture penetration measurement through passivation
Moisture penetration mechanisms of passivation materials
Moisture penetration through passivations covering topography
Oxynitride films failure mechanism
Passivation, electrical measurements of moisture penetration through
90081
by: Boit, C., Kolzer, J., Benzinger, H., Dallmann,A., Siemens AG, Herzog, M., Technical University Munich, Quincke, J., Siemens AG
title: Discrimination of Paraxitic Bipolar Operating Modes in ICs With Emission Microscopy
Bipolar device operating mode characterization
Emission microscopy for bipolar device operation
Emission microscopy, spectral sensitivity a factor in failure analysis
Hot-carrier and latch up distinguished by optical bandpass filters
Latch-up identification as a diffusion controlled phenomenon
NMOS transistor test structure
Parasitic bipolar NMOS transistor
Parasitic bipolar operating modes, determination using emission microscopy
90087
by: Wurfl, J., Institut fur Hochfrequenztechnik, Singh, J.K., Central Electronic Engineering, Hartnagel, H.L.,
Institut fur Hochfrequenztechniktitle: Reliability Aspects of Thermally Stable LaB6-Au Schottky Contacts to GaAs
Annealing, influence on barrier stability
Auger analysis of GaAs-LaB6 interface stability
Contact annealing effects on GaAs refractory gate Metallizations
GaAs-LaB6 Schottky barrier stability
Lanthanum X-Ray photoelectron depth profiling on GaAs Schottky gates
Oxygen content, influence on barrier stability
Oxygen effects on refractory gate metals for GaAs MESFETs
Refractory gate materials for reliable GaAs MESFETs
Schottky gate degradation, improvements with lanthanum hexaboride
Spectroscopy, lanthanum hexaboride-Au Schottky GaAs contacts, thermal stability
90094
by: Taniguchi, M., Amano, Y., Nemoto, T., Shinohara, K., Nippon Mining Co. Ltd.
title: Enhanced Reliability of Hemt by Using a Tin Barrier
GaAs HEMT ohmic contacts degradation
GaAs ohmic contacts, HEMT improvements with titanium-nitride barrier
Ohmic contact degradation in GaAs HEMTS and MESFETS
Outdiffusion of Ga and As in contact
Reliability comparison of GaAs HEMT and MESFETs
Spectroscopy, Auger electron, used GaAs HEMT ohmic contacts investigation
TiN barrier in ohmic contact to prevent outdiffusion
90100
by: Baglee, D.A., Intel Corp., Towner, J.M., Xicor, Inc.
title: "Are Electromigration Failures Lognormally Distributed?"
Log normal distribution of lifetime
Logarithmic extreme value distribution of lifetime
Relationship between grain size and the type of distribution
Statistical distribution of electromigration failures
90106
by: Suehle, J.S., Schafft, H.A., National Institute of Standards & Technology
title: Current Density Dependence of Electromigration t50 Enchancement Due To Pulsed Operation
Current density dependence of t50 enhancement
Decrease of t50 enhancement over a range of frequency
Observation of t50(pulsed)/t50(dc)
Pulsed electromigration test
90111
by: Liew, B.K., Fang, P., Cheung, N.W., Hu, C., University of California, Berkeley
title: Reliability Simulator For Interconnect and Intermetallic Contact Electromigration
Contact electromigration -Al on tungsten
Contact electromigration model for intermetallic contacts
Electromigration impacted by microstructure inhomogeneity
Incorporated into Berkeley reliability tool package (BERT)
Vacancy divergence, flux divergence due to material discontinuity
90119
by: Baerg, W., Wu, K., Davies, P., Dao, G., Fraser, D., Intel Corp.
title: The Electrical Resistance Ratio (RR) As a Thin Film Metal Monitor [BPA]
Correlation between electrical resistance ratio and electromigration lifetime MTTF
Correlation of RR to median-grain-radius for sputtered thin films
Effectiveness of electrical resistance ratio to monitor metal films contamination
Electrical resistance ratio (RR)
Electrical resistance ratio as a thin film metal monitor
Electrical resistance ratio used Van der Pauw method
Measurement of resistance ratio to monitor metal films
90125
by: Walters, M., MCNC, Reisman, A., North Carolina State University
title: Distribution Phenomena of Charged Defects and Neutral Electron Traps in Process-Induced Radiation-Damaged IGFETS With Gate Insulators Grown at 1000C and 800C
Charge defects
Gate oxide damage
Oxidation temperature
Radiation-induced
Traps
90132
by: Mori, S., Kaneko, Y., Arai, N., Ohshima, Y., Araki, H., Narita, K., Sakagami, E., Yoshikawa, K., Toshiba Corp.
title: Reliability Study of Thin Inter-poly Dielectrics for Non-Volatile Memory Application
Defects
Inter-poly dielectrics
Leakage
Nonvolatile
ONO
Thickness limit
90145
by: Wu, K., Pan, C.-S., Shaw, J.J., Freiberger, P., Sery, G., Intel Corp.
title: A Model for EPROM Intrinsic Charge Loss Through Oxide-Nitride-Oxide (ONO) Interpoly Dielectric
Charge loss
EPROM
High temperature
Mechanisms
ONO leakage
90150
by: Rakkhit, R., Haddad, S., Chang, C., Yue, J., Advanced Micro Devices
title: Drain-Avalanche Induced Hole Injection and Generation of Interface Traps in Thin Oxide MOS Devices
EEPROM
Early window closure
Hole injection
Interface traps
MOSFET
90154
by: Miller, T., Illyes, S., Baglee, D.A., Intel Corp.
title: Charge Loss Associated with Program Disturb Stresses In EPROMs
Bitline stress
Charge loss
Defect-induced
EPROM
Program disturb
90159
by: Fishbein, B.J., Jackson, D.B., Digital Equipment Corp.
title: Performance Degradation of N-Channel MOS Transistors During DC and Pulsed Fowler-Nordheim Stress
Electron trapping
Fowler-Nordheim stress, dc & pulsed
MOSFET
90164
by: Burnett, D., Hu, C., University of California, Berkeley
title: Hot-Carrier Reliability of Bipolar Transistors
Bipolar
Forward bias
Hot-carrier degradation
Non-load field
Simulation
90170
by: Kumagai, J., Toita, K., Kaki, S., Sawada, S., Toshiba Corp.
title: Reduction of Signal Voltage of Dram Cell Induced by Discharge of Trapped Charges in NANO-METER Thick Dual Dielectric Film
Charge trapping/detrapping
DRAM dielectric
Degraded data retention
Thin ONO
90178
by: van der Pol, J.A., Koomen, J.J., Philips Research Laboratories
title: Relation Between the Hot Carrier Lifetime of Transistors and CMOS SRAM Products
Access transistor
Hot-carrier degradation
Product lifetime
SRAM
90186
by: Chiang, S., Wang, R., Chen, J., Hayes, K., McCollum, J., Hamdy, E., Actel Corp., Hu, C., University of California, Berkeley
title: Oxide-Nitride-Oxide Antifuse Reliability
Endurance
FPGAs
ONO antifuse
Stability
TDDB
90194
by: Kaneko, H., Hasunuma, M., Sawabe, A., Kawanoue, T., Kohanawa, Y., Komatsu, S., Miyauchi, M., Toshiba Corp.
title: A Newly Developed Model For Stress Induced Slit-Like Voiding
Metallization surface and interface free energy
Orientation control (grain boundary) of metal films, need for
Slit-like void mechanism
90200
by: Fieler, P.E., Motorola, Smith, W.L., Welles, C., Bivas, A., Therma-Wave, Inc., Yost, F.G., Campbell, J.E., Sandia National Laboratories
title: Direct Measurement of Stress-Induced Void Growth by Thermal Wave Modulated Optical Reflectance Imaging [OPA]
Detection and measurement of subsurface voids in passivated metallization
Thermal wave modulated optical reflectance imaging for process development applications
90209
by: Tanikawa, A., Okabayashi, H., NEC Corp., Mori, H., Fujita, H., Osaka University Yamada-oka
title: Observation of Stress-Induced Voiding With an Ultra-High Voltage Electron Microscope
Lattice diffusion and grain boundary diffusion around 400°C
Ultra-High Voltage Electron Microscopy (UHVEM)
90216
by: Hirashita, N., Aikawa, I., Ajioka, T., Kobayakawa, M., Yokoyama, F., Sakaya, Y., Oki Electric Industry Co., Ltd.
title: Effects of Residual Water in Spin-on-Glass Layer on Void Formation For Multilevel Interconnections
Metallization annealing temperature and SOG relationship to voids
Water-outgassing generated gaseous pressure under metallization
90221
by: Tezaki, A., Mineta, T., Egawa, H., Noguchi, T., Toshiba Corp.
title: Measurement of Three Dimensional Stress and Modeling of Stress Induced Migration Failure in Aluminum Interconnects
Metal stress and open failures under passivation
X-ray diffractometry to measure residual stress in aluminum
90231
by: Moazzami, R., Hu, C., University of California, Berkeley, Shepherd, W.H., National Semiconductor
title: Electrical Conduction and Breakdown in SOL-GEL Derived PZT Thin Films
DRAM
DRAM
Ferroelectric
Gate oxide
Lifetime prediction
Nonvolatile memory
PZT (PbZrxTi(1-x)03
PZT Films
Polarization
SOL-GEL deposition
TDDB
TDDB
Voltage stressing
90237
by: Fisch, D.E., Abt, N.E., Bens, F.N., Miller, W.D., Pramanik, T., Saiki, W., Shepherd, W.H., National Semiconductor
title: Analysis of Thin Film Ferroelectric Aging
Aging
FRAM reliability
Ferroelectric memories
Margin testing
Modeling
Nonvolatile memories
Polarization level
Reliability
Signal loss
90244
by: Gallo, A.A., Dexter Corp.
title: Effect of Mold Compound Components on Moisture-Induced Degradation of Gold-Aluminum Bonds in Epoxy Encapsulated Devices
Antimony trioxide caused wire bond failures
Au/Al ball bond failures
Au/Al ball bond intermetallic degradation
Autoclave testing of Plastic ICs
Ball bond strength degradation
Epoxy molding compound flame retardant study
Fire retardant caused failures
Flame retardant caused ball bond failures
Moisture antimony trioxide caused ball bond failures
Moisture resistance of plastic IC DIPS
Moisture-flame retardant interactions
Moisture-induced wire bond failures
Plastic IC wire bond failures
90252
by: Dunn, C.F., McPherson, J.W., Texas Instruments Inc.
title: Temperature-Cycling Acceleration Factors For Aluminum Metallization Failure in VLSI Applications
Al metallization fatique temperature cycle acceleration factors
Al metallization fatique temperature cycle reliability model
AuAl wire bond fatique temperature cycle acceleration factors
AuAl wire bond fatique temperature cycle reliability model
Passivation cracking and Al metal line shifts due to temperature cycling
Passivation cracking and Al metal shifting temperature cycle acceleration factors
Wire bond pad chipout temperature cycle acceleration factors
Wire bond pad chipout temperature cycle reliability model
90259
by: Aritome, S., Kirisawa, R., Endoh, T., Nakayama, R., Shirota, R., Sakui, K., Ohuchi, K., Masuoka, F., Toshiba Corp.
title: Extended Data Retention Characteristics After More Than 10 Write and Erase Cycles In EEPROMs
Charge trapping
Crystalline defects
DRAM
Data retention in EEPROMS
EEPROM
Erase endurance
FETMOS cell
Flash EEPROM
Fowler-Nordheim Tunneling
Interface traps
Leakage junction
Lifetime prediction
Nonvolatile memory
Oxide sidewall
TDDB
TEM
Thermal aging
Write endurance
Write/erase endurance
90265
by: Onishi, S., Ayukawa, A., Tanaka, K., Sakiyama, K., Sharp Corp.
title: Tem Analysis of Failed Bits and Improvement of Data Retention Properties in Megabit-Drams
Charge loss in DRAMS
DRAM
Dislocation loops
Focused Ion beams
Gate current
Junction leakage
LDD
Lifetime prediction
PMOS degradation
Transconductance
90270
by: Reimbold, G., Saint-Bonnet, P., Gautier, J., D.LETI CENG
title: Correlation of Total Gate Current Fluence With PMOS Degradation
CMOS
Charge trapping
Hot-carrier degradation of PMOS transistors
PMOS
90276
by: Akimori, H., Owada, N., Taneoka, T., Uda, H., Hitachi Ltd.
title: Reliability Study on Polycrystalline Silicon Thin Film Resistors Used in LSIs Under Thermal and Electrical Stress
Changes in polysilicon resistivity
Charge trapping
Electrical aging
Electrical stress
Lifetime prediction
Metal contacts
Modeling
Polysilicon resistor
Pt
Reliability
Resistance drift
TEM
Thermal aging
Thermal stress
Ti
90281
by: Lin, D.L., AT&T Bell Laboratories
title: Thermal Breakdown of VLSI by ESD Pulses
ESD protection design guidelines
ESD tester analysis
Human body model analysis
Input protection analysis
Risetime dependence of ESD failures
Thermal breakdown of PN junctions
Three-dimensional thermal model
90288
by: Haddad, H., Hewlett-Packard, Forbes, L., Oregon State University, Burke, P., Richling, W., Hewlett-Packard
title: Carbon Doping Effects on Hot Electron Trapping
Carbon doping
Charge trapping
DLTS
Hot-electrons in MOS transistors
Hydrogen effects
Interface traps
NMOS
Photocapacitance
Vt shift
90290
by: Yiqi, Z., Qing, S., Xidian University
title: hFE Instability and 1/f Noise in Bipolar Transistors
Bipolar
Electric aging
Electric stressing
Fast states
Forward biased beta degradation
Gain degradation
Interface traps
Mobile ions
Noise, 1/f
Reliability of bipolar transistors
Thermal aging
hFE drift
hFE instability
n-p-n temp. storage
91001
by: Schafft, H.A., National Institute of Standards & Technology, Baglee, D.A., Intel Corp., Kennedy, P.E., Managememt Sciences Inc.
title: Building-In Reliability: Making It Work
BIR task force & networks promoting implementation
BIR, core elements
BIR, input parameters categories: intrinsic, extrinsic, & other
BIR, obstacles to
BIR, proactive vs. traditional approach
Integrated Reliability: all phases of manufacture with reliability-driven rules
JEDEC Task Group on Wafer Level Reliability (JC14.2)
Qualified Manufacturers Listing (QML)
91008
by: Hiraka, S., Itabashi, M., Sony Corp.
title: The Influence of Selenium Deposited on Silver Plating on Adhesive Strength of Die-Attachment
Se Ag plating impurity caused die attach failure
Se Ag plating impurity caused epoxy adhesive strength reduction
Se Ag plating impurity caused epoxy resin bleedout
Se Ag plating impurity caused epoxy shear strength reduction
Se rich leadframe plating caused die attach failure
Se rich leadframe plating caused epoxy resin bleedout
Se rich leadframe plating caused sheer strength reduction
Se rich plating surface caused die attach failure
Se rich plating surface caused epoxy adhesive strength reduction
Se rich plating surface caused epoxy resin bleedout
Se rich plating surface caused epoxy sheer strength reduction
91012
by: Shirley, C.G., Hong, C.E.C., Intel Corp.
title: Optimal Acceleration of Cyclic THB Tests for Plastic Packaged Devices
Acceleration model for cyclic THB test
Corrosion reliability model for cyclic THB test
Failure rate model for cyclic THB test
Optimal acceleration in cyclic THB test
Plastic IC acceleration model for cyclic THB test
Plastic IC reliability in cyclic THB test
Plastic defect-caused corrosion in cyclic THB test
Plastic defect-caused corrosion in cyclic THB test
Plastic defect-caused failures in cyclic THB test
Reliability model for cyclic THB test
91022
by: Blish, R.C., Vaney, P.R., Intel Corp.
title: Fail Rate Model for Thin Film Cracking in Plastic ICs
Coffin-Manson model for plastic IC thin film fatique failures
Coffin-Manson model for polysilicon cracking in plastic IC temperature cycling
Coffin-Manson model for thin film cracking in plastic IC temperature cycling