91001
by: Schafft, H.A., National Institute of Standards & Technology, Baglee, D.A., Intel Corp., Kennedy, P.E., Managememt Sciences Inc.
title: Building-In Reliability: Making It Work
BIR task force & networks promoting implementation
BIR, core elements
BIR, input parameters categories: intrinsic, extrinsic, & other
BIR, obstacles to
BIR, proactive vs. traditional approach
Integrated Reliability: all phases of manufacture with reliability-driven rules
JEDEC Task Group on Wafer Level Reliability (JC14.2)
Qualified Manufacturers Listing (QML)
91008
by: Hiraka, S., Itabashi, M., Sony Corp.
title: The Influence of Selenium Deposited on Silver Plating on Adhesive Strength of Die-Attachment
Se Ag plating impurity caused die attach failure
Se Ag plating impurity caused epoxy adhesive strength reduction
Se Ag plating impurity caused epoxy resin bleedout
Se Ag plating impurity caused epoxy shear strength reduction
Se rich leadframe plating caused die attach failure
Se rich leadframe plating caused epoxy resin bleedout
Se rich leadframe plating caused sheer strength reduction
Se rich plating surface caused die attach failure
Se rich plating surface caused epoxy adhesive strength reduction
Se rich plating surface caused epoxy resin bleedout
Se rich plating surface caused epoxy sheer strength reduction
91012
by: Shirley, C.G., Hong, C.E.C., Intel Corp.
title: Optimal Acceleration of Cyclic THB Tests for Plastic Packaged Devices
Acceleration model for cyclic THB test
Corrosion reliability model for cyclic THB test
Failure rate model for cyclic THB test
Optimal acceleration in cyclic THB test
Plastic IC acceleration model for cyclic THB test
Plastic IC reliability in cyclic THB test
Plastic defect-caused corrosion in cyclic THB test
Plastic defect-caused corrosion in cyclic THB test
Plastic defect-caused failures in cyclic THB test
Reliability model for cyclic THB test
91022
by: Blish, R.C., Vaney, P.R., Intel Corp.
title: Fail Rate Model for Thin Film Cracking in Plastic ICs
Coffin-Manson model for plastic IC thin film fatique failures
Coffin-Manson model for polysilicon cracking in plastic IC temperature cycling
Coffin-Manson model for thin film cracking in plastic IC temperature cycling
Polysilicon trace cracking temperature cycle plastic IC failure rate model
Thin film cracking temperature cycled plastic IC failure rate model
91030
by: Zelenka, R.L., National Semiconductor
title: A Reliability Model for Interlayer Dielectric Cracking During Temperature Cycling
Interlayer dielectric cracking dependence on molding compound
Interlayer dielectric cracking temperature cycling failure rate model
Interlayer dielectric cracking temperature cycling reliability model
Interlayer dielectric temperature cycle failure dependence on molding compound
91035
by: Harris, D.O.*, Reizman, F.+, Sire, R.A.*, Popelar, C.F.#, Kanninen, C.F.#, Davidson, D.L.#, Duncan, L.B.+, Kallis, J.M.+, Buechler, D.W.+, Backes, P.G.+, *Failure Analysis Assoc., +Hughes Aircraft, #Southwest Research Institute,
title: Fracture Mechanics Life Prediction for Microscale Components, with Application to Wire Bonding
Al wire bond failure rate model based on fracture mechanics
Al wire bond fatique failure reliability prediction model
Al wire bond fracture failure reliability prediction model
Al wire bond power cycle failure rate model based on fracture mechanics
Al wire bond power cycle fatique failure reliability model based on fracture mechanics
91044
by: Mahaney, M., Shell, M.K., Strode, R., Intel Corp.
title: Use of the In-process Bond Shear Test for Predicting Gold Wire Bond Failure Modes in Plastic Packages [BPA]
Ag ball bonding in-process shear testing for failure rate model prediction
Ag ball bonding in-process shear testing for process control
Ag ball bonding in-process shear testing for process development
Ag ball bonding in-process shear testing for reliability prediction
91052
by: Rosenmayer, C.T., Brotzen, F.R., Rice University, McPherson, J.W., Dunn, C.F., Texas Instruments Inc.
title: Effect of Stresses on Electromigration
91057
by: Estabil, J.J., Dorleans, F., Rathore, H.S., IBM
title: The Effect of Metal Thickness on Electromigration-Induced Extrusion Shorts in Submicron Technology
Electromigration, tungsten vias
Electromigration, tungsten vias MTF data from large test matrix
Electromigration, tungsten vias SEM observation of extrusion short
Electromigration, tungsten vias SEM observation of void failure
Electromigration, tungsten vias extrusion failure rate data vs. M1 thickness
Electromigration, tungsten vias importance of interconnect thickness
Electromigration, tungsten vias literature, competing failure modes explained
Electromigration, tungsten vias new interpretation of Black's relation for
Electromigration, tungsten vias selectivity between voids and extrusion shorts
Electromigration, tungsten vias, deconvolving failure modes in lifetime data
Vias tungsten electromigration, behavior of
91064
by: Hemmert, R.S., Costa, M., IBM
title: Electromigration-InducedCompressive Stresses in Encapsulated Thin-Film Conductors
Electromigration, stress gradient, data on time depence of
Electromigration, extrusion suppression due to compressive stress gradient
Electromigration, lifetime, dependence on conductor length
Electromigration, lifetime, improvement due to compressive stress gradient
Electromigration, shape of compress stress gradient caused by
Electromigration, stress gradient, data on characteristic length of
Electromigration, stress gradient, vs. conductor length, data on
Electromigration, test structures, transistor, to measure stress gradient
Electromigration, transistor as stress sensors in
Stress, metallization, caused by accumulation in electromigration
91070
by: Wood, M.H., Bergman, S.C., Hemmert, R.S., IBM
title: Evidence for an Incubation Time in Electromigration Phenomena [OPA]
Electromigration, failure distribution data for contacts
Electromigration, failure distribution data for sandwich metalizations
Electromigration, failure distribution data for vias
Electromigration, failure distribution three-parameter fit
Electromigration, incubation time, distinguished from threshold
Electromigration, incubation time, evidence for in EM-induced failure
Electromigration, incubation time, independence from median time to fail
Electromigration, incubation time, review of arguments for
91077
by: Hosoda, T., Niwa, H., Yagi, H., Tsuchikawa, H., Fujitsu Ltd.
title: Effects of Line Size on Thermal Stress in Aluminum Conductors
Stress, metallization, comparison of measurements and models
Stress, metallization, data on aspect ratio dependence
Stress, metallization, data showing dependence on line width and thickness
Stress, metallization, discrepancies between data and Eshelby inclusion model
Stress, metallization, film stress measurements vs. thickness and temperature
Stress, metallization,suppression of yielding in narrow lines
Stress, metallization,triaxial, x-ray determination of
Stress, voiding accelerated life testing
Stress, voiding accelerated life time, agreement between measurements and diffusional model
Stress, voiding metallization, life time data vs. line width and thickness
X-ray stress, measurements of Al interconnects
91084
by: Yamaji, T., Igarishi, Y., Nishikawa, S., Oki Electric Industry Co., Ltd.
title: Suppression of Migration in Al Conductors by Lowering Deposition Temperature in Plasma CVD SiN Passivation
Electromigration, passivation effects, data on low and high T SiN
Electromigration, role of thermal stress in
Electromigration, suppression by low temperature
Passivation effects, low temperature SiN, thermal stress reduction in Al interconnects
Stress migration, data on non-Arrhenius behavior
Stress migration, elevated-temperature storage test data on failure rates
Stress migration, failure rates, data on power-law linewidth dependence
Stress voiding elevated-temperature storage test data on notch void densities,
Stress voiding hydrogen not a major factor in
Stress voiding passivation effects, data on low and high T SiN
Stress voiding suppression by low-temperature SiN passivation
Stress, metallization, comparison of thermal and passivation stress effects
91091
by: May, J.S., Texas Instruments Inc.
title: Electromigration Characteristics of Vias in Ti:W/Al-Cu(2%) Multilayered Metallization
Electromigration, vias, Al step coverage not a concern
Electromigration, vias, activation energy, dependence on current direction
Electromigration, vias, failure distributions, dependence on current direction
Electromigration, vias, failure mechanism, dependence on current direction
Electromigration, vias, focused ion beam observations of voiding
Electromigration, vias, multilayer metallization
Electromigration, vias, performance comparison with planar test structures
Electromigration, vias, testing, advantages of van der Pauw test structures
Electromigration, vias, voiding at interface
Vias, electromigration, failure mechanisms
91097
by: Kageyama, M., Hashimoto, K., Onoda, H., Oki Electric Industry Co., Ltd.
title: Formation of Texture Controlled Aluminum and its Migration Performance in Al-Si/TiN Stacked Structure
Al metallization, semi-epitaxial (111) growth on TiN
Al metallization, texture control using TiN
Bayer layer, TiN, (111) orientation by rapid thermal nitridation
Bayer layer, TiN, RTN vs. sputtered in EM and stress void resistance
Bayer layer, TiN, role of in preferred orientation of Al interconnects
Electromigration, failure distribution data for oriented Al on TiN
Electromigration, lifetime improvement with Al texture
Stress voiding, elevated-temperature storage test data for Al on TiN
Stress voiding, role of Al texture in increasing
Texture, metallization, X-ray diffraction data for Al on TiN
Texture, metallization, control of Al film crystallographic orientation
91102
by: Lawrence, J.D., McPherson, J.W., Texas Instruments Inc.
title: Corrosion Susceptibility Testing of Al-Cu and Al-Cu-Si Films
Al metallization, native oxide, RBS measurements of
Corrosion, Al/alloy metallization, chlorine-induced
Corrosion, Al/alloy metallization, detrimental effect of Cu
Corrosion, Al/alloy metallization, native oxide, quality vs. alloy
Corrosion, Al/alloy metallization, suppression by Si alloying
Corrosion, Al/alloy metallization, suppression by annealing
Corrosion, Al/alloy metallization, susceptibility vs. Cu content
Corrosion, Al/alloy metallization, test structure for
Corrosion, Al/alloy metallizations, at localized defects in native oxide,
Corrosion, SEM observations of corrosion sites
Corrosion, metallization, failure distributions, data for different alloys
Corrosion, metallization, initiation at grain boundaries and triple points
91107
by: Wang, H., De, H., Lahri, R., National Semiconductor
title: Improving Hot-Electron Reliability Through Circuit Analysis and Design
Circuit design methodology for hot electron reliability
Hot-electron degradation susceptibilities for NMOS/PMOS, AC/DC stress
Hot-electron design guidelines
Hot-electron reliability/performance tradeoffs
Hot-electron stress test structures
91112
by: Rakkhit, R., Yue, J.T., Advanced Micro Devices
title: A Comparison of Inverter-Type Circuit Lifetime and Quasi-Static Analysis of n-MOSFET Lifetime
Hot-electron degradation in ring oscillator circuits; frequency shifts
Hot-electron degradation of inverter circuit lifetime
Limitations of quasi-static analysis of inverter circuit lifetime
MOS transistor/circuit hot electron degradation relationship
Models for hot-electron degradation
Transistor parameter shifts under hot-electron stress
91118
by: Takeda, E., Izawa, R., Umeda, K., Nagai, R., Hitachi Ltd.
title: AC Hot-Carrier Effects in Scaled MOS Devices
AC hot-carrier effects
Device structure dependence of ac hot-carrier effects; Drain engineering
Effect of gate pulse noise on ac hot-carrier degradation
Interrelationship of drain engineering (SD, LDD,GOLD) and hcs mode (CHE, DAHC)
Measurement system wiring inductance effect on ac hcs determination
91123
by: Geissler, S., Adler, E., Bolam, R., IBM
title: A Thermally Activated Gate Current in Off-State p-MOSFETs
Gate induced drain leakage in buried channel PMOSFETs; physical mechanisms
PMOSFET design constraints for hot-carrier reliability
PMOSFET hot-carrier instabilities
Thermally activated gate current in PMOSFETs
Trench isolation effects on hot-carrier phenomena
91129
by: Matsuzaki, N., Watanabe, A., Minami, M., Nagano, T., Hitachi Ltd.
title: Increase Hot-Carrier Degradation of n-MOSFETs under Very Fast Transient Stressing
AC and DC hot-carrier stress relationship
Fast (sub-nanosecond) transient stress of NMOSFETs
On-chip signal generator for ac testing of hot-carrier effects
Oxide trap creation during hot-carrier stress
Shortcoming of quasi-static model for ac lifetime estimation
91133
by: Brox, M., Weber, W., Siemens AG
title: Proof and Quantification of Dynamic Effects in Hot-Carrier-Induced Degradation Under Pulsed Operation Conditions
Dynamic stress effects in submicron CMOS NAND and NOR gates
Hole and electron transport in SiO2
Oxide-silicon interface charge trapping effects; time constants
Physical effects involved in hot-carrier degradation
Trapping and detrapping of charge in SiO2
91142
by: Henderson, C.L., Soden, J.M., Sandia National Laboratories
title: ICFAX, An Integrated Circuit Failure Analysis Expert System
Analytical information
Artificial intelligence
Computer software program
DOS-based personal computers
Expert system
Failure analysis information
Failure analysis procedures
Failure analysis process flow
Failure analysis techniques
Failure mechanism
Integrated circuit failure analysis expert system (ICFAX), Sandia Labs
Level 5 object
Photographic information
Software programs
Training
91152
by: Shell, M.K., Golwalkar, S., Intel Corp.
title: Application of Infrared Microscopy for Bond Pad Damage Detection
Au-Al intermetallics
Ball bond damage
Bond pad cratering
Bond shear
C-Mode Scanning Acoustic Microscopy (C-Sam)
Corrosion
Cracks
Dielectric damage
Failure analysis
IR
Infrared microscope
Kirkendall voids
Mechanical damage detection
Microscopy
Near-infrared wavelength
Reflective infrared (IR) microscopy
Si damage
Si nodules
Temperature and humidity stresses
Wire pull
91160
by: Moore, T.M., McKenna, R., Kelsall, S.J., Texas Instruments Inc.
title: Correlation of Surface Mount Plastic Package Reliability Testing to Nondestructive Inspection by Scanning Acoustic Microscopy
Acoustic
Coefficient of Thermal Expansion (CTE)
Compressive stress
Delamination
Die surface delamination
Focused acoustic beam
Glass transition temperature
Impact of moisture on plastic package cracking
Intermittent wire bond contacts
Lead frame delamination
Moisture testing
Moisture/thermal-induced damage
Nondestructive analysis
Package cracking
Package reliability
Packaged voids
Plastic Leaded Chip Carrier (PLCC)
Plastic surface mount component cracking
Reflection technique
Scanning Acoustic Microscopy (SAM)
Shear displacement
Stress-induced passivation damage
Surface Mount Technology (SMT)
Surface mount plastic packages
Transducer
Vapor-phase solder reflow (VPR)
Wire bond degradation
91167
by: Matusiewicz, G.R., Kirch, S.J., Seeley, V.J., Blauner, P.G., IBM
title: The Role of Focused Ion Beams in Physical Failure Analysis
Circuit isolation
Cross-sectioning
Die deprocessing/delayering
Die probing
Electron beam
Endpoint detection
FIB induced deposition
Failure analysis
Focused ion beam (FIB) techniques
Ion beam
Ions
Isolator deposition technique
Material deposition
Material removal
Metal deposition
Sputtering
91171
by: Barker, S.A., Intel Corp.
title: Effects of Carbon on Charge Loss in EPROM Structures
C doping
Carbon
Carbon dioxide
Charge loss in EPROMS
Charge retention
EPROM
HCl gate oxide
Nonvolatile memory
Oxide, floating gate
Oxide, interpoly
Oxides
Polysilicon oxide
TDDB
TriCloroethAne (TCA)-oxides
91175
by: Mori, S., Sakagami, E., Kaneko, Y., Ohshima, Y., Arai, N., Yoshikawa, K., Toshiba Corp.
title: Threshold Voltage Instability and Charge Retention in Nonvolatile Memory Cell with Nitride/Oxide Double-Layered Inter-poly Dielectric
Charge loss
Charge retention
Charge retention of ONO Oxides
DRAM
EEPROM
EPROM
Flash EEPROM
Memories, nonvolatile
Modeling
NO (Nitride/Oxide)
Nonvolatile memory
ONO (oxide/nitride/oxide)
Oxides, NO
Programming EPROMs
Scaling
TDDB
Thermal aging
Threshold voltage shifts
Tunneling back
Vt shift
91183
by: Katayama, T., Mashiko, Y., Mitsuhashi, J., Koyama, T., Tsukamoto, K., Ikeda, S., Nakayama, A., Koyama, H., Tsubouchi, N., Mitsubishi Electric Corp.
title: A New Failure Mechanism Related to Grain Growth in DRAMs
Charge retention
Compressing stress
DRAM
Degraded retention time in DRAMS
Failure analysis
Gate-oxide leakage
Grain size, polysilicon
Oxide leakage
P-doping effect
Phosphorous concentration of polysilicon
Polysilicon
Retention time
Si protuberance
Stress effects
TDDB
TEM
VHT (variable hold time)
91188
by: Kapoor, A.K., Lin, C.-H., Oh, S.-Y., Hewlett Packard Laboratories
title: Effect of Emitter-Base Reverse Bias Stress on High Frequency Parameters of Bipolar Transistors
Base resistance
Bipolar transistors
Charge trapping
Cut-off frequency
Degradation of high frequency bipolar transistors
E-B stressing
Reverse bias of emitter base junction
Transit time
91193
by: Niitsu, Y., Yamaura, K., Momose, H., Maeguchi, K., Toshiba Corp.
title: Anomalous Current Gain Degradation in Bipolar Transistors
Beta degradation
BiCMOS
Bipolar
Bipolar transistors
CVD oxide
Charge trapping
E-B stressing
Forward tunneling
Gain degradation
Gain degradation of bipolar transistors
Interface traps
Lifetime prediction
Reverse bias Vbe
SRH current
Thermal oxide
hFE
91200
by: Christou, A., University of Maryland, Anderson, W.T., Naval Research Laboratory, Hu, J.M., University of Maryland
title: Reliability of InGaAs HEMTs on GaAs Substrates
Dislocations at InGaAs/GaAs interface after life test
GaAs HEMT and PHEMT reliability
In GaAs HEMT pseudomorphic, channel degradation due to traps
In GaAs HEMT pseudomorphic, structure effects on reliability
Trap generation in HEMTs under stress
91206
by: Canali, C., Dipartimento di Elettronica ed Informatica, Magistrali, F., Sangalli, M., Telettra S.p.A., Tedesco, C., Zanoni, E., Dipartimento di Elettronica ed Informatica, Castellaneta, G., Tecnopolis - CSATA, Marchetti, F., IRST
title: Reliability Aspects of AlGaAs/GaAs HEMTs
Accelerated life tests of HEMTS and PHEMTS
GaAs HEMT reliability comparisons of different suppliers
GaAs Schottky contacts, HEMT and MESFETs wearout comparisons
GaAs Schottky contacts, HEMT improvements with barrier layers
GaAs Schottky contacts, HEMT improvements with refractory metals
GaAs ohmic contacts, HEMT and MESFETs wearout comparisons
GaAs ohmic contacts, HEMT improvements with barrier layers
HEMT, failure mechanisms
Schottky barrier instabilities
Source and drain resistance changes
91214
by: Maurer, R.H., Bargeron, C.B., Benson, R.C., Chao, K., Nhan, E., Wickenden, D.K., Johns Hopkins University Applied Physics Lab
title: Failure Analysis of Aged GaAs HEMTs
GaAs HEMT reliability comparisons of different suppliers
Gate failures cause by surface defects
HEMT failure mechanism
Surface defects in GaAs HEMTs
91224
by: Magistrali, F., Sala, D., Salmini, G., Telettra S.p.A., Fantini, F., Ist.Scienze dell' Ingegneria, Giansante, M., CNR-LAMEL, Vanzi, M., Telettra S.p.A.
title: ESD-Related Latent Failures of InGaAsP/InP Laser Diodes for Telecommunication Equipment
ESD damage in InGaAs/InP laser diodes
InGaAs/InP laser diode reliability
Latent ESD failures in laser diodes
91234
by: Shiojima, K., Okumura, T., Tokyo Metropolitan University
title: Mapping Evaluation of Inhomogeneously Degraded Au/Pt/Ti Contact to GaAs
Au-platinum-titanium Schottky gate GaAs contacts, degradation mechanisms
Au/GaAs interdiffusion causing contact degradation
Correlating barrier degradation and diffusion
Optical measurements on Au-platinum-titanium Schottky gate GaAs contacts
Photoemission microscopy, use to evaluate Schottky contacts
Scanning internal photoemission, failure analysis technique for Schottky GaAs gate
91239
by: Aton, T.J., Joyner, K.A., Blanton, C.H., Appel, A.T., Harward, M.G., Bennett-Lilley, M.H., Mahanti-Shetti, S.S., Texas Instruments Inc.
title: Using Scanned Electron Beams for Testing Microstructure Isolation and Continuity
Charge Induced Scanning Microscope Evaluation and Testing (CISMET)
Charge-induced scanning microscope
Continuity testing
E-beam tester
Isolation/continuity testing
Pattern testing
Scanned electron beams
Scanning Electron Microscope (SEM)
Secondary electrons (SEs)
Silicon On Insulator (SOI)
Voltage contrast
91245
by: Yasuda, A., Yamaguchi, H., Tanabe, Y., Owada, N., Hirasawa, S., Hitachi Ltd.
title: Direct Measurement of Localized Joule Heating in Silicon Devices by Means of Newly Developed High Resolution IR Microscopy
Emissivity
High resolution IR (Infrared rays) microscope
IR microscope
Infrared microscopy
Joule heating
Localized joule heating
Measuring localized joule heating
Silicon On Insulator (SOI)
Temperature testing
Thermal behavior
Thermal conduction of SiO2
Thermal conductivity
91250
by: Rodgers, M.R., Digital Instruments, Inc.
title: Application of The Atomic Force Microscope to Integrated Circuit Reliability and Failure Analysis
Atomic Force Microscopy (AFM)
Atomic resolution
Atomic structure
Cantilever deflection
Compact disks
Confocal microscope
Electron microscopes
Failure analysis
Grain size
Grain structure
Image processing
Insulator surface imaging
Metal grains
Non-contact mode
Photomasks
Photoresist
Piezoelectric scanner
SEM
Scanning Probe Microscopy (SPM)
Scanning Tunneling Microscope (STM)
Silicon nitride cantilever
Surface roughness
Surface topology imaging
Three dimensional surface measurement
Topographic images
Ultra-high resolution measuring technologies
91255
by: Onishi, S., Ayukawa, A., Sakiyama, K., Sharp Corp.
title: Formation of a Defect-Free Junction Layer by Controlling Defects Due to As+ Implantation
As+ implantation in LDD structure
Junction leakage failures due to residual defects: eliminated
Radiation damage due to ion implantion
Si3N4 film as a implantation mask vs SiO2
91260
by: Trindade, D.C., Advanced Micro Devices
title: Can Burn-In Screen Wearout Mechanisms? Reliability Modeling of Defective Subpopulations - A Case Study
Case study with 50% burn-in rejects due to sodium
Defective subpopulations screened out
91264
by: Suyko, A., Sy, S., Intel Philippines Mfg. Inc.
title: Development of a Burn-in Time Reduction Algorithm Using the Principles of Acceleration Factors
Acceleration factor, electric field
Acceleration factor, temperature
Burn-in at 140 °C for 1 hr.
Burn-in time reduction
91271
by: Huston, H.H., Wood, M.H., DePalma V.M., IBM
title: Burn-in Effectiveness - Theory and Measurement
Burn-in experiment with MCM
SRAM Burn-in acceleration factor of 11 by programmed electrical switching
91277
by: Crowell, C.R., Shih, C.-C., Tyree, V.R., University of Southern California
title: SWEAT Structure Design and Test Procedure Criteria Based upon TEARS Characterization and Spatial Distribution of Failures in Iterated Structures
Design of SWEAT electromigration test structures
Effect of number of segments on distribution of failures
SWEAT test procedure based on `'Tears'' thermal model
91287
by: Dion, M.J., Harris Semiconductor/SEMATECH
title: EXTRA-EM: Extraction of Temperature and Resistance for Acceleration of Electromigration at Wafer Level
SWEAT test procedure based on `'EXTRA-EM'' thermal model
Thermal modeling of wafer level electromigration test structures
91298
by: Katto, H., Harada, M., Higuchi, Y., Hitachi Ltd.
title: Wafer-Level Jramp & J-Constant Electromigration Testing of Conventional & Sweat Patterns Assisted by a Thermal & Electrical Simulator
Electromigration model, thermal and electrical simulator
Temperature profile in sweat structure, thermal conductivites of metal and oxides
Wafer-level metal electromigration, J-Ramp, J-constant method
91306
by: Tonti, W.R., Noble, W.P., Abadeer, W.W., Mittl, S.W., IBM, Haensch, W.E., Siemens Components Inc.
title: Doping Profile Design for Substrate Hot-Carrier Reliability in Deep Submicron Field Effect Transistors
Channel implant doses for submicron MOSFETs
Hot-carrier reliability in deep-submicron MOSFETs
Modeling of substrate hot-carrier effects
Process design for hot-carrier reliability; dopant profile effects
Substrate hot-carrier (SHC) stress effects in submicron CMOS
91310
by: Nishida, T., Thompson, S.E., University of Florida
title: Oxide Field and Temperature Dependences of Gate Oxide Degradation by Substrate Hot Electron Injection
Gate oxide process dependence of hot-carrier degradation
Hot-carrier effects at 77K
Measurement technique for energy spectrum of oxide traps
Oxide field and temperature dependences of gate oxide hot-carrier degradation
91316
by: Joshi, A.B., Lo, G.Q., Kwong, D.L., University of Texas at Austin, Lee, S., NCR Corporation
title: Improved Performance and Reliability of MOSFETs with Thin Gate Oxides Grown at High Temperature
Comparison of MOSCAP and MOSFET characterization of thin oxides
Dry oxygen oxidation of Si in the temperature range 800-1100°C
Gate oxidation temperature effects on MOSFET parameters and reliability
Mechanisms of channel hot electron degradation and gate induced drain leakage
Radiation sensitivity as a function of gate oxidation temperature
Thermal budget constraints in ULSI processing
Thin (11 nm) gate oxide MOSFET device hot-carrier degradation
91323
by: Ting, W., Lo, G.Q., Ahn, J., Chu, T.Y., Kwong, D.L., University of Texas at Austin
title: Comparison of Dielectric Wear-out Between Oxides Grown in O2 and N2O
Comparison of dielectric wearout in N2O and O2-grown oxides
N2O (nitrous oxide) oxidation of Si
Polarity dependence of charge-to-breakdown in N2O grown oxides: data and model
Transconductance degradation of MOSFETs with N2O and O2-grown gate oxides
Ultrathin (6 nm) gate dielectric properties
91327
by: LeBlanc, J.P., Chaine, M.D., Texas Instruments Inc.
title: Proximity Effects of "Unused" Output Buffers on ESD Performance
Lateral SCR devices
Post ESD stress leakage
Proximity effect ESD failures
91331
by: Ushiyama, M., Ohji, Y., Nishimoto, T., Komori, K., Murakoshi, H., Kume, H., Tachi, S., Hitachi Ltd.
title: Two Dimensionally Inhomogeneous Structure at Gate Electrode/Gate Insulator Interface Causing Fowler-Nordheim Current Deviation in Nonvolatile Memory
Annealing process temperature effects on oxide surface roughness
Atomic force microscopic analysis of oxide surfaces
Doping concentration effects in polysilicon gate electrode processing
Flash EEPROM tunnel oxide erase dependence on device processing
Oxide surface roughening by phosphorus reaction; effect on F-N I-V uniformity
Polysilicon electrode/gate oxide interface effects
91337
by: Crook, D.L., Intel Corp.
title: Detecting Oxide Quality Problems Using JT Testing
Charge collection multiplier test structures for oxide quality, use of
Gate oxide defect detection: separation of mechanisms
JEDEC ramp voltage and JT test comparison
Process induced charging damage of gate oxides