93001
by: Shiono, N., Itsumi, M., NTT LSI Laboratories
title: A Lifetime Projection Method Using Series Model and Acceleration Factors for TDDB Failures of Thin Gate Oxides
Electric field acceration, reciprocal field model, validity
Failure probablity distribution, Weibull, suitability
Lifetime prediction, thermal oxide (SiO2)
TDDB characterized with series model
TDDB electric field and temperature acceleration
TDDB failures described with Weibul Distributed
TDDB gate area effects
TDDB under pulse bias stress
TDDB, area dependence, series model
TDDB, constant voltage
TDDB, thermal oxide (SiO2)
TDDB, unipolar pulsed voltage
Thermal activation energy, field dependence
93007
by: Schuegraf, K.F., Hu, C., University of California, Berkeley
title: Hole Injection Oxide Breakdown Model for Very Low Voltage Lifetime Extrapolation
Breakdown prediction, breakdown charge (QBD)
Breakdown prediction, breakdown time (TBD)
Direct tunneling thin oxide conduction model
Electron conduction, thin oxide (SiO2), Fowler-Nordheim (FN) tunneling
Electron conduction, thin oxide (SiO2), direct tunnelling
Intrinsic silicon dioxide breakdown phenomena
Oxide (SiO2) breakdown mechanism, anode hole injection model, low voltage
Silicon dioxide breakdown anode hole injection model
Silicon dioxide breakdown quantitative model
93013
by: Fang, S., McVittie, J.P., Stanford University
title: A Mechanism for Gate Oxide Damage in Nonuniform Plasma
Capacitor, MOS, antenna
Capacitor, MOS, trench
Electron current in (SiO2) plasma-induced SPICE simulation
Electron current in (SiO2) plasma-induced sheath voltage effect
Gate oxide damage by antenna charging effect
Gate oxide damage in nonuniform plasmas
Oxide (SiO2) breakdown, device structure effect
Oxide (SiO2) breakdown, plasma process effect
Oxide (SiO2) damage plasma process, O2, nonuniform
Plasma induced wafer charging model
93018
by: Strong, A.W., Stamper, A.K., Bolam, R., Furukawa, T., Gow, C., Gow, T., Martin, D,W., Mittle, S.W., Nakos, J.S., Pennington, S.L., IBM Corporation
title: Gate Dielectric Integrity and Reliability in 0.5µm CMOS Technology
Failure analysis with electron-beam-induced-currents
Gate dielectric degradation by passivation layer deposition
Gate dielectric process integration issues
Gate dielectric yield measurement with antenna structures
93022
by: Henley, W.B., Jastrzebski, L., University of South Florida, Haddad, N.F., IBM Corporation
title: Effects of Iron Contamination on Thin Oxide Breakdown and Reliability Characteristics
Electric field enhancement, 2D defect simulation
Gate oxide electrostatic model for iron defects
Oxide (SiO2) breakdown, iron (Fe) contamination effect
Oxide (SiO2) breakdown, oxide thickness effect
Oxide reliability, thermal SiO2, Al gate, iron (Fe) contamination effect
Surface photovoltage (SPV), iron (Fe) contamination
Thin oxide breakdown by iron contamination in Si
93028
by: Rajagopalan, S., Mitra, U., Pan, S., Gupta, K., Lin, C.M., Sery, G., Mittal, S., Hasserjian, K., Lo, W.J., Neubauer, G., Intel Corporation
title: Reaction of DI Water and Silicon and its Effect on Gate Oxide Integrity
Atomic Force Microscopy for Si surface roughness measurement
Corrosive Si attack by OH ions
DI water etch of Si, descriptive model
Gate oxide integrity effects by pre-gate chemical treatment
Micro-roughness of Si and gate oxide quality
Oxide reliability, thermal SiO2, Si gate, surface roughness effect
Si surface micro-roughness, HF treated, deionized (DI) water effect
93032
by: Chan, V.-H., Kim, J.S., Chung, J.E., MIT
title: Parameter Extraction Guidelines for Hot-Electron Reliability Simulation
Hot-carrier-induced degradation, channel MOSFETS (nMOSFETs) lifetime technique review
Hot-carrier-induced degradation, impact of local oxide electric field (gate to drain voltage)
Hot-carrier-induced degradation, models and calibration of reliability simulators
Hot-carrier-induced degradation, saturation of degradation
Hot-carrier-induced degradation, simulation of AC stress
Hot-carrier-induced degradation, statistical analysis of DC stress
Hot-carrier-induced degradation, testing methodolgies
Hot-carrier-induced degradation, tradeoff between test time and number of devices
93038
by: Huang, D.H., King, E.E., ARACOR, Palkuti, L.J., Defense Nuclear Agency
title: Improved Method for Evaluating Hot-Carrier Aging in p-Channel MOSFET's
Hot-carrier-induced degradation, 0.5 micron p-channel MOSFETs (pMOSFETs)
Hot-carrier-induced degradation, constant electron injection test technique
Hot-carrier-induced degradation, constant gate test method
Hot-carrier-induced degradation, eliminates saturation of degradation with time
Hot-carrier-induced degradation, experimental results
Hot-carrier-induced degradation, substrate current used for lifetime prediction
93043
by: Pan, Y., National University
title: The Hot-Carrier Induced Degradation Mechanisms of 0.8µm LDD p-MOSFET with 850°C Wet Gate Oxidation
Hot-carrier-induced degradation, in 0.8 micron pMOSFETs with lightly doped drains
Hot-carrier-induced degradation, pMOSFETs with 850 centigrade wet gate oxidation
Hot-carrier-induced degradation, saturation drain current logarithmic time dependence
Hot-carrier-induced degradation, saturation of linear drain current with time
93048
by: Higman, J.M., Orlowski, M., Motorola Inc.
title: Monte Carlo Simulation of Deep-Submicron SOI and Conventional nMOSFET Hot-Electron-Induced Degradation
Hot-carrier-induced degradation, 20 MHz dynamic (AC) stress
Hot-carrier-induced degradation, comparison dynamic and static stress
Hot-carrier-induced degradation, due to channel hot-carriers
Hot-carrier-induced degradation, experimental findings
Hot-carrier-induced degradation, in 0.6 micron nMOSFETs
Hot-carrier-induced degradation, in voltage controlled oscillator(VCO)
Hot-carrier-induced degradation, shift in VCO frequency
Hot-carrier-induced degradation, threshold voltage and transconductance change
93053
by: Jiang, C., VLSI Technology,Inc., Johnson, E., VLSI Technology, Inc., Shaw, J.J., Intel Corporation, Hu, C., University of California
title: AC Hot-Carrier Degradation in a Voltage Controlled Oscillator
CMOS MOSFETs, sub-quarter-micron
Hot-electron induced degradation, simulated comparison of SOI and nMOSFETs
Hot-electron induced degradation,in SOI, function of gate material
Hot-electron induced degradation,theoretical
Hot-electrons, function of lateral and vertical oxide electric field
Monte carlo simulation, comparison of SOI and conventional nMOSFETs to hot electrons
Monte carlo simulation, frozen field calculation
SOI nMOSFETs, fully depleted thin-film
93057
by: Snyder, E.S., Campbell, D.V., Swanson, S.E., Pierce, D.G., Sandia National Laboratories
title: Novel Self-Stressing Test Structures for Realistic High-Frequency Reliability Characterization [BPA]
Hot-carrier-induced degradation, 1 micron CMOS
Hot-carrier-induced degradation, 230 MHz dynamic stress
Hot-carrier-induced degradation, complete recovery of saturation drain current by annealing
Hot-carrier-induced degradation, electron traps and donor-like interface states
Hot-carrier-induced degradation, experiment and modeling
Hot-carrier-induced degradation, experimental findings
Hot-carrier-induced degradation, lifetime variation with temperature at high frequencies
Hot-carrier-induced degradation, model for variation with stress frequency to 200 MHz
Hot-carrier-induced degradation, model for variation with stress of inverter and nMOSFET
Hot-carrier-induced degradation, quasi-static model
Hot-carrier-induced degradation, self-stressing test structures
Hot-carrier-induced degradation, statistical analysis of high frequency stress
Hot-carrier-induced degradation, statistical model for lifetime
Reliability test simulation, test structures for calibration at high frequencies
Reliability test structures, electromigration
Reliability test structures, high frequency reliability characterization with DC test system
Reliability test structures, hot-carrier induced degradation
Reliability test structures, model for DC-controlled high frequency oscillator
Reliability test structures, oxide breakdown
Reliability test structures, temperature sensor and heater
Reliability test structures, use on-chip frequency source for high frequency stressing
93066
by: Chin, D., Pan, S., Wu, K., Intel Corporation
title: Geometry Effect on CMOS Transistor Stability Under DC Gate Stress
Electron trapping, SOI devices more sensitive than nMOSFETs
Electron-hole pair generation, less in SOI than nMOSFETs
Hot-carrier-induced degradation, channel length and width dependence
Hot-carrier-induced degradation, due to high voltage DC gate stress
Hot-carrier-induced degradation, due to substrate hot-carriers
Hot-carrier-induced degradation, experimental findings
Hot-carrier-induced degradation, in CMOS transistors
Hot-carrier-induced degradation, negative trapped charge for positive gate stress
Hot-carrier-induced degradation, nonuniform interface states for negative gate stress
Hot-carrier-induced degradation, three distinct damage regions
93071
by: Wada, J., Suguro, K., Hayasaka, N., Okano, H., Toshiba Corporation
title: New Method of Making Al Single Crystal Interconnections on Amorphous Insulators
Agglomeration phenomena
Annealing, sequential
Crystal orientation of single crystal Al
Electromigration-resistance of single crystal Al
Free energy
In-situ anneal
Polycrystalline Al, interconnects
Single crystal Al, interconnects
Surface migration
Surface tension
93077
by: Pietrucha, B.M., AT&T Bell Laboratories
title: The Role of Field Performance Information in Building in Reliability
Build-in reliability
Field failure feedback path
Field performance
ISO-9000
National Electronic Process Certification Standard (NECPS)
Qualified Manufacturers List (QML)
Root cause
Screening limitations
Screening methodology
93081
by: van Geest, D.C.L., Hoeksma, R.H., Twente University, Brombacher, A.C., Philips Consumer Electronics, Herrmann, O.E., Twente University
title: Integration of Physical Reliability Knowledge Into the Design of VLSI-Circuits
Degradation behavior
Failure mechanism specific operational knowledge base
Markov method
Monte carlo simulation
Stress susceptibility interaction
Stressor set
Stressor/susceptibility interaction
Susceptibility probability density function
Time dependent stressor distribution
93087
by: Prendergast, J., Analog Devices B.V.
title: Reliability, Yield and Quality Correlation For A Particular Failure Mechanism
Gate oxide rupture
Linear dependence of yield reliability
Poly-p+ channel stop short
Quality-reliability relationship
Wafer acceptance test, parametric probe
Wafer sort, probe
Yield-reliability relationship
93094
by: Tse, P.K., AT&T Bell Laboratories, Picard, L.J., AT&T Microelectronics, Swaub, J.E., AT&T Bell Laboratories, Brown, R.W., AT&T Microelectronics, Gurnett, C.J., AT&T GBCS, Terefenko, G.J., AT&T Microelectronics
title: Failure Mechanisms of Thin Silicon Tantalum Integrated Circuit (STIC) Resistors on Multi-Chip Module (MCM)
Destabilization of Ta205 w/high pH electrolyte
Field-induced Ta2N anodization
Monolithic thin film resistors, Si tantalum integrated circuit (STIC) resistors
Multi-chip module, STIC resistor failure mechanism
STIC resistors, MCM applications
STIC resistors, anodization and resistance shift
STIC resistors, failure mechanisms and failure rate estimate
STIC resistors, tester resistor design and fabrication
STIC resistors, thermal stabilization
Si Tantalum integrated circuit (STIC) resistors, failure mechanisms
Ta2N anodization
Thermal activation of Ta2N anodization
93103
by: Sato, K., Okinaga, T., Kohara, T., Ota, T., Hitachi VLSI Engineering Corp., Otsuka, K., Honda, A., Mizuno, C., Hitachi, Ltd.
title: Investigation of Short Circuit Caused by Reduction of PbO Sealing Glass Used for VLSI Package
Ceramic package, short circuit by reduction of sealing glass
Dendritic Pb formation
Galvanic reduction
H2 outgassing from Mo heat sinks
Lead frame finger short
Molybdenum heat sink, reaction with PbO sealing glass
Sealing glass reduction by reaction with molybdenum
Sealing glass, lead oxide (PbO) sealing glass short circuit
93108
by: van Gestel, R., Schellekens, H., Delft University of Technology
title: 3D Finite Element Simulation of the Delamination Behaviour of a PLCC Package in the Temperature Cycle Test
Delamination, 3D simulation of a PLCC package during temp cycle
Die-mold compound delamination during thermal cycling
Exponential dependence of crack growth on thermal cycles
Exponential dependence of delamination growth with thermal cycles
Finite element analysis, 3D simulation PLCC package in temp cycle
Moisture sensitivity, 3D simulation of delamination in a PLCC package during temp cycle
Nodal lumped integration for FEM
Plastic package 3D simulation of delamination in a PLCC package in a temp cycle
Surface mount technology, 3D simulation of delamination in a PLCC during temp cycle
93122
by: Zhao, J., Li, G.P., University of California, Liao, K.Y., Chin, M.R., Hughes Aircraft, Sun, J.Y.-C, IBM Corporation, Chiu, T.Y., AT&T Bell Laboratories
title: Current Gain Increase of n-p-n Transistors by Electromigration of Atomic Hydrogen in Emitter Polysilicon
Bipolar current gain instability
Hydrogen electromigration in polysilicon
93127
by: Brand, A., Wu, K., Pan, S., Chin, D., Intel Corporation
title: Novel Read Disturb Failure Mechanism Induced By FLASH Cycling
Flash EPROM, cycling effects
Flash EPROM, data retention
Flash EPROM, read disturb
93133
by: Dunn, C., P., Hefley, P., Pope, S., Lewis, T., Chong, D., Desai, S., Patel, P., Baker, D., Dolby, D., Strauss, T., Gunturi, S., Wright, P., Sudak, P, Texas Instruments, Inc.
title: Process Reliability Development for Nonvolatile Memories
EPROM UV erase, passivation effects
EPROM data retention, passivation effects
Electron trapping in reoxidized nitrided dielectrics
Flash EPROMs, gate dielectrics for
Humidity performance, passivation effects
Reoxidized nitrided dielectrics for Flash EPROMs
Textured polysilicon, process effects
93147
by: Abadeer, W., Tonti, W., IBM Corporation, Hansch, W., Schwalke, U., Siemens Components Inc.
title: Bias Temperature Reliability of n+ and p+ Polysilicon Gated n-MOSFETs and p-MOSFETs
Bias-temperature Vt instability
Boron doped polysilicon, effect on oxide trapping
Role of boron in oxide trapping
p+ polysilicon, effect on oxide trapping
93150
by: Ohno, Y., Kimura, H., Sonoda, K., Satoh, S., Mitsubishi Electric Corp., Sayama, H., Hara, S., Takai, M., Osaka University, Miyoshi, H., Mitsubishi Electric Corp.
title: Soft-Error Study of DRAMs Using Nuclear Microprobe
Soft errors, cell vs. bitline sensitivity
Soft errors, effect of retrograde wells
Soft errors, local sensitivity to
Soft errors, observation with nuclear microprobe
93156
by: Burnett, D., Lage, C., Bormann, A., Motorola Inc.
title: Soft-Error-Rate Improvement in Advanced BiCMOS SRAMs
Soft errors, improvement with buried layer
Soft errors, improvement with triple well
93161
by: Ameraqsekera, A., Chatterjee, A., Chang, M.-C., Texas Instruments, Inc.
title: Prediction of ESD Robustness of a Process Using 2-D Device Simulations
ESD protection performance, NMOS
ESD protection performance, effect of processing technology
ESD robustness
ESD robustness - 2D model
ESD robustness - peak power density
ESD susceptibility - modeling
Peak power density, correlation to ESD performance
Second breakdown trigger current, correlation to ESD performance
Simulations, ESD events
Simulations, electrothermal
93168
by: Campbell, A.N., Cole, Jr., E.I., Dodd, B.A., Anderson, R.E., Sandia National Laboratories
title: Internal Current Probing of Integrated Circuits Using Magnetic Force Microscopy [OPA]
Atomic Force Microscopy (AFM)
Current imaging IC conductors
Current mapping
Failure analysis, IC
Fault isolation techniques
Fault isolation, current mapping
Magnetic Force Microscopy
Microscopy, Magnetic Force
Microscopy, Scanned Probe
Microscopy. Atomic Force
Scanned Probe Microscopy
Scanning force microscopy
93178
by: Bruce, V., Advanced Micro Devices
title: Energy Resolved Emission Microscope
CCD camera, as emission detector
Electroluminescence spectroscopy
Emission microscopy
Emission microscopy, energy resolved
Emission microscopy, flat fielding
Emission microscopy, image processing
Emission microscopy, spectrally corrected
Failure analysis, IC
Flat fielding, optical
Hot-carriers, energy distribution
Microscopy, light emission
Photo Emission Microscopy
93184
by: Tsujide, T., Hamada, H., NEC Corporation, Lepejian, D., Caywood, J.M., Heuristic Physics Labs, Inc.
title: Automatic Memory Failure Analysis Using an Expert System in Conjunction with a Memory Tester/Analyzer
Expert system - memory device failure analysis
Expert system, IC failure analysis
Failure Mode Analysis (FMA)
Failure analysis, DRAM
Fault isolation - expert system
Fault isolation techniques
Fault table, DRAM
Memory device failure analysis - expert system
Memory device failures - Pareto ranking
Memory device failures - trend monitoring
93190
by: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., National University, Cronquist, B., Chartered Semiconductor Mfg.
title: A New Low-Voltage Contrast Mechanism to Image Local Defects in Very Thin Silicon Dioxide Films: True Oxide Electron Beam Induced Current
Electron beam induced current (EBIC) - Displacement Current Contrast
Electron beam induced current (EBIC) - Tunneling Current Microscopy
Electron beam induced current, capacitively coupled (CEBIC)
Electron beam induced current, true oxide (TOEBIC)
Oxide defect imaging
Oxide defect mapping
Oxide defects, MOS capacitors
SEM voltage contrast
Tunneling current microscopy
Voltage Contrast
93199
by: Fixl, A.J., Schlumberger Technologies, Jenkins, K.A., IBM, Wilsher, K,R., Schlumberger Technologies, Immediator, M.J., Perincheril, L., Shin, H.J., IBM
title: Laser Stimulated Electron-Beam Prober for 15ps Resolution Internal Waveform Measurements of a 5 Gb/s ECL Circuit
E-beam, pulsed
E-beam, transit time effects on bandwidth
Electron beam prober, very high speed
Electron beam, laser stimulated
Electron beam, pulsed photocathode
Failure analysis, IC
Photocathode, E-beam source
Photocathode, pulsed laser induced photoemission
Waveform measurement, E-beam Probe
Waveform measurement, high resolution
93204
by: Tuhus, T., University of Oslo, Bjorneklett, A., Center for Industrial Research
title: Thermal Cycling Reliability of Die Bonding Adhesives
Adhesive die attach, plastic package
Adhesive die attach, temperature cycle endurance
Adhesive die attach, thermal resistance
Coefficient of Thermal Expansion (CTE), adhesive die attach
Die bonding adhesives
Epoxy, Ag-filled adhesive
Fatigue
Grain boundary sliding
Hard solders
Mechanical stress
Number of cycles to failure
Package reliability
Plastic packages
Polyimide, Ag-filled adhesive
Soft solders
Solder, ultimate shear strain
Stress relaxation
Substrate metallization
Temperature cycling
Test chips, thermal
Thermal cycling reliability
Thermal resistance, plastic package
93209
by: Pinizzotto, R.F., Jacobs, E.G., Wu, Y., Sees, J.A., Foster, L.A., Pouraghabagher, C., University of North Texas
title: The Dependence of the Activation Energies of Intermetallic Formation on the Composition of Composite Sn/Pb Solders
Activation energy, tin/Cu intermetallics
Composite solder
Cu Tin, intermetallic formation, activation energy
Cu Tin, intermetallic formation, scanning electron microscopy
Cu Tin, intermetallic formation, transmission electron microscopy
Cu Tin, thin film, diffusion couples
Diffusion barrier, nickel
Diffusion barrier, tin/Cu
Diffusion coefficient, intermetallic
Eutectic solder
Flux, RMA
Intermetallic, tin lead solders on Cu
Solder joint reliability, effect of tin/Cu intermetallics
Solder joints, surface mount technology
Solder, Tin(63)/Lead(37)
Surface Mount Technology (SMT)
Tin Lead solder, intermetallics
93217
by: Shirley, C.G., Shell-De Guzman, M., Intel Corporation
title: Moisture-Induced Gold Ball Bond Degradation of Polyimide-Passivated Devices in Plastic Packages
Au Al, intermetallic formation
Ball bond shear testing
Board-mount stress
Bond degradation
Bond pad metallization
Bond shear
Bond strength
Bonder force
Bonder power
Bonding parameters
HAST, Highly Accelerated Stress Test
Interfacial fracture
Kelvin resistance measurements
Kirkendall voiding
Lead frame
Low bonding parameters
Mis-targeted bonds
Moisture preconditioning
Moisture sensitivity
Moisture-induced, ball bond degradation
Moisture-induced, bond degradation in plastic packages
Off-pad bonds
Package reliability
Peck moisture-related failures
Plastic package, Au ball bond reliability
Polyimide die coat
Polyimide passivation, bond degradation in plastic packages
Pre-bake
Thin film cracking
Ultrasonic bonding
Vapor-phase solder reflow (VPR)
Wire bond degradation with polyimide passivated die in plastic packages
Wire bond, Au ball bond reliability in plastic packages
Wire bond, moisture-induced Au ball bond degradation
Wire bond, off pad bonding effect on reliability
Wire bonding
Wire breaks
Wire pull testing
93227
by: Shook, R.L., Conrad, T.R., AT&T Bell Laboratories
title: Accelerated Life Performance Of Moisture Damaged Plastic Surface Mount Devices
Autoclave testing
Ball bond lifting
Bond false healing
Contaminant ingression
Corrosion
Cracking, SMT package moisture-induced
De-capsulation
Delamination, SMT package moisture-induced
Die surface delamination
Failure Mode Analysis (FMA)
Flux activation
Humidity chamber
Infrared solder reflow (IR)
Lead frame delamination
Lead frame, Ag spot
Lead frame, Cu
Lead-to-lead leakage
Moisture ingression
Moisture preconditioning
Moisture sensitivity, plastic SMT packages
Moisture-induced cracking & delamination in plastic packages
PLCC, 32 pin, 44 pin
Plastic package FITs
Plastic surface mount packages, reliability performance
Polyimide die coat
Popcorn cracks
Power cycling
Pre-bake
Preconditioning, plastic SMT packages
RH, 85°C/60%, 85°C/85%
Reliability performance, with moisture-induced solder reflow damage
SOJ, 28 pin
Scanning acoustic microscopy, analysis of plastic packages
Static bias, 5V
Surface mount technology, corrosion induced performance degradation
Surface mount technology, moisture sensitivity of plastic SMT packages
Surface mount technology, moisture-induced cracking & delamination in plastic packages
Surface mount technology, preconditioning to simulate board assembly process
Surface mount technology, solder reflow damage in plastic packages
Temperature cycling
Temperature-Humidity-Bias test (THB)
Water solube flux
Weibull distribution
93236
by: Tay, A.A.O., Tan, G.L., National University, Lim, T.B., Texas Instruments Pte Ltd.
title: A Criterion for Predicting Delamination in Plastic IC Packages
Adhesion promoter
Adhesion strength
Crack tip
Cracking, SMT package moisture-induced
Delamination, SMT package moisture-induced
Finite element analysis, plastic surface mount devices, SOJ package
In-plane shear stress
Infrared solder reflow (IR)
Lead frame dimples
Lead frame, Cu
Lead frame, alloy 42
Linear elastic fracture mechanics (LEFM)
Mold compound, cure temperature, post mold cure
Package development, integrity, reliability
Plane stress & strain
Plastic package cracking, delamination
Poisson's ratio
Preconditioning, plastic SMT packages
Prediction, cracking in plastic packages
Prediction, delamination in plastic packages
RH, 85°C/40%, 85°C/65%, 85°C/85% test
Shear modulus, stress
Stress analysis, distribution
Surface mount technology, critical stress intensity factor in plastic packages
Surface mount technology, leadframe/mold compound adhesion/stress
Surface mount technology, stress induced delamination in plastic packages
Thermal mismatch
Vapor-phase solder reflow (VPR)
Zero stress temperature
93244
by: Van Doorselaer, K., Hente, A., Alcatel Bell, Saboui, A., Moscicki, J.-P., SGS-THOMSON Microelectronics
title: Thin Type Packaging: An Effective Way to Improve the Popcorn Resistance of Plastic-Packaged IC's
Adhesion
Autoclave testing
Cracking, SMT package moisture-induced
Delamination, SMT package moisture-induced
Die surface delamination
HAST, Highly Accelerated Stress Test
High density packaging
Lead frame, alloy 42
Low loop wire bonding
Metal shifting
Moisture absorption
Moisture ingression
Moisture preconditioning
Moisture sensitivity, plastic SMT packages
Moisture-damaged packages
Mold compound
Package integrity
Package reliability
Plastic Quad Flat Package (PQFP)
Plastic package delamination
Popcorn resistance
Pre-bake
Preconditioning, IPC type
Preconditioning, plastic SMT packages
RH, 125°C/85%, HAST test
RH, 35°C/75%, 85°C/30%, 85°C/65%, 85°C/85%, tests
Scanning Acoustic Microscopy (SAM)
Surface mount technology, thin plastic Quad flat package (TQFP)
TQFP, 1.0 mm & 1.4 mm thick, 64 & 100 pins
TQFP, moisture absorbtion and resistance
TQFP, package cracking (popcorn)
Temperature cycling
Temperature-Humidity-Bias test (THB)
Thermomechanical mismatch
Wire bond degradation
93250
by: Duffalo, J.M., Erhart, D.L., Schmok, S.C., Motorola Inc.
title: Novel Failure Modes with Overmolded Printed Circuit Board-based Surface Mount Packages
Autoclave
Ball array, plastic package
Broken bond wires
Corrosion
Cracking, SMT package moisture-induced
Delamination, SMT package moisture-induced
Die surface delamination
Gross leak test
Heat spreader
Infrared solder reflow (IR)
Interfacial delamination
Laser interferometry
Lead frame
Lifted ball bonds
MIL STD-883C Method 1011C
Material interfaces
Mechanical cross-sectioning
Moisture sensitivity, plastic SMT packages
Mold compound adhesion
Multi-chip Module (MCM)
Overmolded printed circuit board
PQFP, 64 pin & 160 pin PCB-based
Package design
Package reliability
Plastic Quad Flat Package (PQFP)
Plastic package, ball array package
Plastic package, printed circuit board based packages
Popcorn performance
Pre-bake
Preconditioning, plastic SMT packages
Printed Circuit Board (PCB)
RH, 85°C/30%, test
Scanning Acoustic Tomography (SAT)
Scanning Laser Acoustic Microscopy (SLAM)
Solder ball array carriers
Soldermask delamination
Stress induced fatigue
Surface Mount Devices (SMD)
Surface mount technology, overmolded printed circuit board based package
Temperature cycling
Thermal expansion mismatch
Thermal shock
Thick film fabrication
Wire bond fatigue
X-ray analysis
93255
by: Crook, D.L., Domnitei, M., Webb, M.K, Bonini, J., Intel Corporation
title: Evaluation of Modern Gate Oxide Technologies to Process Charging
Capacitor, MOS, antenna
Gate oxide CV/IV walkout measurement technique
Gate oxide charge trapping at point defects
Gate oxide process induced charging
IV/CV measurement, trapped charge effect, walkout, flatband shift
MOS capacitance-voltage (CV) measurement
MOS current-voltage (IV) measurement
MOS gate oxide, thermal SiO2, N20 anneal
MOS gate oxide, thermal chemical-vapor-deposition (CVD) composite
Oxide,(SiO2) breakdown, current density-time (Jt) measurement
93262
by: Tang, Y., Chang, C., Haddad, S., Wang, A., Lien, J., Advanced Micro Devices
title: Differentiating Impacts of Hole Trapping vs. Interface States on TDDB Reduction in Thin Oxide Gated Diode Structures
MOS gated diode, thermal oxide (SiO2), interface state generation
MOS gated diode, thermal oxide (SiO2),hole trapping
Oxide pre-stress influence on TDDB
TDDB impact of hole trapping verus interface states
TDDB independence of hole or electron injection
TDDB reduction correlation with hot-carriers
TDDB reduction through hot-carrier bombardment
93272
by: Shin, H., Noguchi, K., Hu, C., University of California
title: Thickness and Other Effects on Oxide and Interface Damage by Plasma Processing
Enhanced hot-carrier degradation from plasma processing
Interface states in SiO2, plasma process induced
Oxide and interface damage by plasma processing
Oxide defect density errors with large area test capacitors
Oxide reliability, thermal SiO2, plasma process charging effects
Plasma damage, thermal SiO2, anneal effects
Plasma damage, thermal SiO2, capacitor area effects
Plasma damage, thermal SiO2, oxide thickness effects
Plasma damage, thermal SiO2, plasma turn-on/off effects
Plasma process induced latent damage
Plasma processes act like constant current sources
93280
by: Monsérié, C., Papadas, C., SGS-THOMSON Microelectronics, Ghibaudo, G., UA-CNRS, Gounelle, G., Mortini, P., SGS-THOMSON Microelectronics, Pananakakis, G., UA-CNRS
title: Correlation Between Negative Bulk Oxide Charge and Breakdown, Modeling, and New Criteria for Dielectric Quality Evaluation
Breakdown charge (QBD), thermal SiO2, constant current
Bulk charge generation, thermal SiO2
MOS bulk oxide quality, thermal SiO2
Oxide breakdown activation energies
Oxide breakdown correlation with negative bulk charge
Oxide breakdown qualitative model
Oxide degradation at weak points at the injecting interface
Oxide quality criteria
Wearout and breakdown, thermal SiO2 Interface quality states
Wearout and breakdown, thermal SiO2, bulk charge effects
93285
by: Dumin, D.J., Scott, R.S., Subramoniam, R., Clemson University
title: A Model Relating Wearout Induced Physical Changes in Thin Oxides to the Statistical Description of Breakdown
Bulk charge generation, thermal SiO2
MOS capacitance-voltage (CV) measurement
MOS current-voltage (IV) measurement
MOS transient current-time (IT) measurement
Oxide breakdown model related to physical wearout
Oxide wearout model and characterization
TDDB distributions generated by statistical model
TDDB, distribution, Weibull, simulation
Trap discharge, SiO2, tunneling front model
Trap generation, thermal SiO2, fluence effects
Trap generation, thermal SiO2, polarity effects
Trap generation, thermal SiO2, time effects
Trap generation, thermal SiO2,voltage effects
Wearout and breakdown, thermal SiO2,
93293
by: Rakkhit, R., Heiler, F.P., Fang, P., Sander, C., Advanced Micro Devices
title: Process Induced Oxide Damage and Its Implications to Device Reliability of Submicron Transistors
Capacitor, MOS, antenna
Gate oxide degradation of transistors by plasma based processing
Gate oxide deterioration source and cumulative effects
Oxide damage, thermal SiO2, plasma induced
Oxide damage, thermal SiO2, process induced
Oxide reliability, thermal SiO2, process effects
Transistor gate oxide damage assessment with antenna structures
Transistor hot-carrier performance versus interconnect antenna
93297
by: Oates, A.S., AT&T Bell Laboratories
title: Electromigration in Stress-Voided Al Alloy Conductors
Effects of stress voiding on electromigration life
Electromigration failure model for stripes with stress voids
Electromigration, in stress voided metal, MTF dependence on current density
Electromigration, in stress voided metal, MTF dependence on void size
Electromigration, in stress voided metal, SEM observations of failure sites
Electromigration, in stress voided metal, failure distributions for
Electromigration, in stress voided metal, modeling failure probability
Electromigration, in stress voided metal, reliability
Electromigration, in stress voided metal, role of stress gradients in failure
Electromigration, in stress voided metal, void density effects
Reliability of stress voided conductors
Slit voids, nucleation at stress voids during electromigration
Stress voids in Al alloy conductors
Stress voids, acceleration conditions
Stress voids, influence electromigration
93304
by: Dreyer, M.L., Fu, K.Y., Varker, C.J., Motorola Inc.
title: The Effects of Temperature and Microstructure on the Components of Electromigration Mass Transport
Effects of linewidth on electromigration activation energy
Effects of linewidth on median lifetime
Electromigration failure model for narrow lines
Grain boundary and lattice mass transport model for electromigration
93311
by: Ting, L.M., May, J.S., Hunter, W.R., McPherson, J.W., Texas Instruments, Inc.
title: AC Electromigration Characterization and Modeling of Multilayered Interconnects
AC electromigration at 2MHz
AC electromigration characteristics
AC electromigration failure under repetitive dual-pulse
Average current recovery model
Current wave form
Model for AC electromigration failure in W/AlSiCu lines
93317
by: Hinode, K., Furusawa, T., Homma, Y., Hitachi, Ltd.
title: Dependence of Electromigration Lifetime on the Square of Current Density
Current dependence model for electromigration failure
Dependence of number of voids and hillocks on current density
Dependence of void growth rate on current density
93327
by: Griffin, Jr., A.J., Hernandez, S.E., Brotzen, F.R., Rice University, Lawrence, J.D., McPherson, J.W., Dunn, C.F., Texas Instruments, Inc.
title: Corrosion Behavior of Thin-Film Metallizations on CVD W and Sputtered W-Ti Barrier Layers
Corrosion behavior of Al and Al alloy films on CVD tungsten
DC polarization testing for thin film corrosion
Immersion testing for thin-film corrosion
93334
by: Saito, T., Aoki, H., Tamaru, T., Owada, N., Hitachi, Ltd.
title: Reliability Improvement in Blanket Tungsten CVD Contact Filling Process for High Aspect Ratio Contact
Contact open failure
Failure prevention in submicron contacts
Failures in CVD Tungsten filled contacts
Failures in high aspect ratio contacts
Failures in submicron contacts with aspect ratio of 2
93340
by: Shibata, H., Matsuno, T., Hashimoto, K., Toshiba Corporation
title: Via Hole-Related Simultaneous Stress-Induced Extrusion and Void Formation in Al Interconnects
Annealing-induced Al extrusion in vias holes
Failure mechanism in tungsten filled via
Stress-induced extrusion in Al interconnects
Stress-induced failure in Al interconnects
Via failure due to 450°C annealing
93345
by: Dreike, P.L., Barton, D.L., Sandoval, C.E., Sandia National Laboratories
title: Analysis of Parametric Drift of a MESFET-Based GaAs MMIC Due to 125°C Storage
Aging study of GaAs MESFET MMICs
Electromigration, accelerated tests, extrapolating for narrow linewidth
Electromigration, data supporting linewidth-dependent activation energy
Electromigration, data supporting linewidth-dependent failure time
Electromigration, failure of Black's equation for narrow linewidths
Electromigration, importance of lattice diffusion
Electromigration, microstructural effects on
Electromigration, modeling contributions from lattice and grain boundaries
Electromigration, modeling linewidth dependence of activation energy
Electromigration, modeling linewidth dependence of failure time
Electromigration, modeling mass transport in
Failure Analysis of GaAs MESFET based VVA MMICs
Microwave attenuation in GaAs MESFET based VVA MMICs
93352
by: Ragle, D., Decker, K., Loy, M., Texas Instruments, Inc.
title: ESD Effects on GaAs MESFET Lifetime
ESD, GaAs MMICs
GaAs MESFETs, Noncatastrophic ESD damage
93357
by: Weatherford, T.R., McMorrow, D., Curtice, W.R., Campbell, A.B., Knudson, A.R., Naval Research Laboratory
title: Examination of the SEU Sensitivity of GaAs MESFETs via 2-D Computer Simulation and Picosecond Charge Collection Experiments
Computer simulation of charge collection in GaAs MESFETs
Electromigration, AC, Average current recovery model
Electromigration, AC, MTF dependence on duty's cycle
Electromigration, AC, data at 2 MHz
Electromigration, AC, experimental comparison with DC and pulsed DC
Electromigration, AC, lifetime data for multilayer interconnects
Electromigration, AC, methodology for design guidelines
Electromigration, AC, modeling, comparison with vacancy relaxation model
Electromigration, AC, modeling, damage recovery
Electromigration, AC, modeling, improvement of average current model
Electromigration, AC, multilayer interconnects
Electromigration, AC, testing characterization of thermal transients
Electromigration, AC, testing using general AC waveform
Enhanced charge-collection in GaAs MESFETs
GaAs MESFETs, 2-D carrier transport code
GaAs MESFETs, 2-D electron temperature model
GaAs MESFETs, collection of SEU charge
GaAs MESFETs, electron and hole densities
Indium Phosphide (InP) HEMTs, life test results
SEU in GaAs MESFETs, enhanced charge collection
Single event upset (SEU) effects, GaAs MESFETs
93364
by: LaCombe, D.J., Hu, W.W., Bardsley, F.R., General Electric Company
title: Reliability of 0.1 µm InP HEMTs
Accelerated testing, GaAs HEMTs
Black's relation, current density model, contrast with Joule heating model
Black's relation, current density model, contrast with incubation time model
Black's relation, current density model, contrast with threshold model
Black's relation, lifetime dependence on square of current density explained
Black's relation, numerical simulations of current density exponent
Distributed stress life test, GaAs HEMTs
Electromigration, data on interval distributions of voids and hillocks
Electromigration, data on void size distributions vs. current density
Electromigration, void density, constancy of during conductor life
Electromigration, void density, linear dependence on current density
Electromigration, void growth rate, linear dependence on current density
Performance and reliability, InP HEMTs
93372
by: Pereira, J.S., Shieh, P.J., Gobbi, A.L., Sato, E., Malberti, P., Santos, T., Borin, F., Patel, N., Telebras
title: Reliability of InGaAs/InP Photodiodes Passivated with Polyimide
Corrosion, Al/alloy metallizations, effects of barrier layers
Corrosion, galvanic series for thin film metallizations
Corrosion, metallizations behavior explained in terms of galvanic couples
Corrosion, metallizations effects of surface roughness of barrier layers on
Corrosion, metallizations, DC polarization measurement technique
Corrosion, metallizations, effects of sputtered vs. CVD barrier layers on
Corrosion, metallizations, galvanic couples between Al and barrier layers
Corrosion, metallizations, immersion tests of
Corrosion, relative rates of, for Al/alloys on barrier layers
Dark current, failure of photodiodes
Photodiodes
Reliability of InGaAs/InP mesa photodiodes
Structure, fabrication and characteristics of InGaAs/InP mesa
93375
by: Halkias, G., Christou, A., Huang, K., Li, J., University of Maryland, Papanicolaou, N., Naval Research Laboratory
title: Surface Related Failure Mechanisms in Polyimide Passivated L-Band MMICs
Contacts, blanket tungsten, H annealing process to suppress open failure
Contacts, blanket tungsten, H reduction CVD W process to suppress open failure
Contacts, blanket tungsten, comparison of silane and H-reduction nucleation
Contacts, blanket tungsten, corrosion of Si interface during filling
Contacts, blanket tungsten, open failure SEM observations of
Contacts, blanket tungsten, open failure, activation energy of
Contacts, blanket tungsten, reliability vs thermal stressing
Contacts, filling by blanket tungsten, CVD process
Contacts, submicron, high aspect ratio
Electromigration at GaAs-Polyimide interface of MMICs
GaAs MMICs, polymide passivation, defects in and caused by
GaAs MMICs, polymide passivation, life test results
Gate leakage at GaAs-Polyimide interface, MMICs
Monte carlo, MMIC reliability
Polymide passivated GaAs MMICs
93380
by: Montangero, P., Azzini, G.A., Libratore, M., Mancini, M., Pederzini, E., Serra, L., CSELT
title: A SOM Approach to the Failure Physics of Optoelectronic Devices
Laser diodes, failed due to dislocations
Optical beam induced current (OBIC) applied to laser diodes
Photo luminescence (PL) applied to laser diodes
SOM, III-V material analysis
SOM, OBIC and PL, analysis of laser diodes
SOM, failure analysis of AlGaAs/GaAs laser diodes
Scanning optical microscopy applied to laser diodes
Stress voiding, near vias
Vias stress void failure, mechanism of void formation
Vias stress void failure, modeling of stress distribution and Al displacement
Vias stress void failure, observations by opitical, T-W, and SEM techniques
Vias, failure by void formation and Al extrusion
Vias, influence of high temperature anneal on reliability of Al lines with vias
Vias, reliability data vs. anneal conditions determined by accelerated testing
Vias, stress void failure, effect of via-via separation on
Vias, stress void failure, failure analysis methodology
Vias, stress void failure, influence of anneal time and temperature on