chron8505



	85001 McPherson, J.W., Baglee, D.A., Texas Instruments Inc. Acceleration Factors for Thin Gate Oxide Stressing [OPA] TDDB activation energy, field acceleration Thin gate oxide failure acceleration factors Thin gate oxide reliability 85006 Meyer, W.K., Crook, D.L., Intel Corp. A Non-Aging Screen to Prevent Wearout of Ultra-Thin Dielectrics MOS gate dielectric reliability TDDB Ultrathin dielectrics, non aging reliability screen 85011 Wegener, H.A.R., Guterman, D.C., Xicor, Inc. The Prediction of Textured Poly Floating Gate Memory Endurance Gate oxide reliability Nonvolatile RAM cell reliability Textured poly floating gate. 85018 Watanabe, T., Menjoh, A., Mochizuki, T., Shinozaki, S., Ozawa, O., Toshiba Corp. A 100 Å Thick Stacked SiO2/Si3N4/SiO2 Dielectric Layer for Memory Capacitor Gate dielectric for DRAM memories Multilayer gate oxide reliability Silicon nitride (Si3N4) based gate dielectric Stacked multilayer Metal-Insulator-Semiconductor (MIS) reliability TDDB 85024 Chen, I.C., Holland, S., Hu, C., University of California, Berkeley A Quantitative Physical Model for Time-Dependent Breakdown in SiO2 SiO2 gate oxide reliability TDDB, quantitative physical model Tunnel oxide reliability 85032 Mikata, Y., Mori, S., Shinada, K., Usami, T., Toshiba Corp. Low Leakage Current Polysilicon Oxide Grown by Two-Step Oxidation Erasable Programable Read Only Memory (EPROM) data retention Erasable Programable Read Only Memory (EPROM) reliability Low leakage polysilicon oxide, process dependence. 85039 Dumas, J.M., Lecrosnier, D., Bresse, J.F., Centre National d'Etudes des Telecommunicatio Investigation into GaAs Power MESFET Surface Degradation Accelerated life testing of GaAs MESFETs C.V.D. Silicon nitride on GaAs MESFETs Degradation of RF performance, GaAs MESFETs 85045 Kretschmer, K.H., Hartnagel, H.L., Institut fur Hochfrequenztechnik XPS Analysis of GaAs—Surface Quality Affecting Interelectrode Material Migration Lateral material migration in GaAs FETs Surface treatment, GaAs FETs XPS analysis of surface treated GaAs FETs 85049 Immorlica, A.A.,Jr., Microwave Semiconductor Corp., Michener, J.R., Siemens RTL High Voltage Screening of GaAs Power FETs: Effect on Burn-in Yield and Modes of Catastrophic Device Failure DC biased burn-in, GaAs MESFETs Gate-drain runaways, GaAs MESFETs High voltage screening of GaAs MESFETs Infant mortality, GaAs FETs 85054 Christou, A., Tseng, W., Peckerar, M., Anderson, W.T., McCarthy, D.M., Buot, F.A., Campbell, A.B., Knudson, A.R., Naval Research Laboratory Failure Mechanism Study of GaAs MODFET Devices and Intergrated Circuits Accelerated testing, GaAs MODFETs Alpha-particle irradiation, GaAs MODFETs Diffusion controlled degradation, GaAs MODFETs 85060 Havey, G., Herrlin, J., Kampf, D., Honeywell The Integrated Time and Stress Measurement Device Concept Environmental sensors Integrated sensors Magnetic field and hall effect sensors Moisture and humidity sensors Systems reliability analysis Temperature sensors Vibrations and acoustic sensors



	85065 Bergquist, L.E., Martin Marietta Denver Aerospace A Helium Leak Detector for Small Components Hermetic seal, helium leak rate improved test method Hermeticity failure, detection of Leak checking, helium method Leak tests, combining fine and gross Package leakage, detection of 85068 Sigmund, F., Rea, J., Huffman, D., Mostek Corporation, Lautzenhiser, J., Megahed, S.,Dr., Rayovac Corporation Predicting the Data Retention Lifetime of a Lithium Carbon Mono-Fluoride Battery Connected to a ZEROPOWER Battery failure mechanisms Battery lifetime, estimates for 85074 LaCombe, D.J., Parks, E., General Electric A Study of Resistance Variations During Electromigration Arcing as a potential electromigration healing mechanism Electromigration resistance measurement limitations Finite element Mechanism study Resistance measurement Resistance variation during electromigration Thermal simulation Void formation relationship to resistance 85081 Towner, J.M., Signetics Corp. Electromigration-Induced Short Circuit Failure [BPA] Al whisker Barrier - TiW Electromigration-induced, short circuit failures Reliability data 85087 Chen, T.M., Djeu, T.P., University of South Florida, Moore, R.D., Harris Corporation Electromigration and 1/f Noise of Aluminum Thin Films Noise measurement system for electromigration studies Noise relation to EM damage Noise, 1/f 85093 Schafft, H.A., Grant, T.C., National Bureau of Standards, Saxena, A.N., Koa, C.-Y., Gould AMI Semiconductors Electromigration and the Current Density Dependence Al-1%Si metallization (sputtered) test structures with cross-bridge structures Current density exponent Electromigration standard test structure Temperature of stripe 85100 Root, B.J., Turner, T., Mostek Corporation Wafer Level Electromigration Tests for Production Monitoring Fast electromigration test (< 15 seconds) Metal quality - power density Process control test structure Standard Wafer-level Electromigration Acceleration Test (SWEAT) 85108 Hong, C.C., Crook, D.L., Intel Corp. Breakdown Energy of Metal (BEM)—A New Technique For Monitoring Metallization Reliability at Wafer Level [OPA] Breakdown Energy of Metal (BEM) stepped current electromigration test Fast electromigration test (< 60 seconds) Median energy to fail Process control electromigration test 85115 Yau, L., Hong, C., Crook, D., Intel Corp. Passivation Material and Thickness Effects on the MTTF of Al-Si Metallization Electromigration, effect of passivation thickness on Passivation (undoped oxides, p-doped oxide (PSG), oxynitride, & their sandwiches) EM effects Reliability data MTTF 85119 Partridge, J., Littlefield, G., Charles Stark Draper Laboratory, Inc. Aluminum Electromigration Parameters Current density dependency of n Electromigration controversy Vacancy concentration contributants 85126 Yue, J.T., Funsten, W.P., Taylor, R.V., Advanced Micro Devices Stress Induced Voids in Aluminum Interconnects During IC Processing [OPA] Fabrication induced metallization defects Grain size dependence on metal voids



	Metal void effects on electromigration Process dependency Stress induced voids in Al interconnects Stress relationships of metal voids Stress voiding - generic paper 85138 Tatsuzawa, T., Madokoro, S., Hagiwara, S., Oki Electric Industry Co., Ltd. Si Nodule Formation in Al-Si Metallization Electromigration as a function of Si nodule size Electromigration, effect of silicon nodules Model for Si nodule formation Nodule formation in Al-Si metallization Si Nodule size effect on electromigration Silicon nodules - size Temperature dependence 85142 Turner, T., Wendel, K., Mostek Corporation The Influence of Stress on Aluminum Conductor Life Al metallization creep Coble creep of Al Creep resistance of Al with Cu Nabarro-Herring creep of Al Silicon nodules- creep caused by TC mismatch Stress induced failures on Al-Si metal line Stress voiding - 16K DRAM 85148 Nishida, T., Mukai, K., Inaba, T., Kato, T., Tezuka, I., Horie, N., Hitachi Ltd. Moisture Resistance of Polyimide Multilevel Interconnect LSI'S Corrosion of Al lines Moisture resistance of polymide Multilevel interconnect Polymide-PIQ interconnect wearout failures Temperature/ humidity accelerated test 85153 Thomas, S., Berg, H.M., Motorola, Inc. Micro-Corrosion of Al-Cu Bonding Pads Al-Cu bond pad corrosion Corrosion mechanism Corrosion of bond Pads Cu doped Pitting of Al metallization films 85159 Wada, T., Higuchi, H., Ajiki, T., Matsushita Electronics Corp. A Paradoxical Relationship Between Width/Spacing of Aluminum Electrodes and Aluminum Corrosion Al corrosion as a function of temperature-humidity-and voltage Corrosion of Al interconnect Corrosion resistance - Al alloy metallization Line width dependence Space dependence on Al corrosion Width dependence on Al corrosion 85164 Opila, R.L., Sinclair, J.D., AT&T Bell Laboratories Electrical Reliability of Silver Filled Epoxies for Die Attach Conduction in Ag filled epoxy Die attach, Auger analysis of Ag-filled epoxies Die attach, energy dispersive x-ray (EDX) of Ag-filled epoxies Die attach, scanning electron microscopy (SEM) of Ag-filled epoxies Die attach, structual and electrical properties of Ag-filled epoxies Epoxy die attach variation with Ag concentration Epoxy die attach variation with storage Epoxy die attach-Ag filled-morphology Epoxy die attach-resistance Epoxy, Ag filled die attach adhesives 85173 Mencinger, N.P., Carthy, M.P., McDonald, R.C., Intel Corp. Use of Wetting Angle Measurements in Reliability Evaluations of Au-Si Eutectic Die Attach Au metallization, control of thickness and effect on reliability Au metallization, effect of humidity aging Au metallization, oxide formation of Au metallization, thickness measurement by energy dispersive x-ray (EDX) Backside metallization-Au Backside metallization-in-process control Backside metallization-thickness measurement Contact angle, relationship to Au-Si die reliability



	Die attach reliability-cracking Die attach reliability-voiding Die attach, Au-Si eutectic Die attach, Au-Si thickness measurement by energy dispersive x-ray (EDX) Die attach, contact angle and reliability of Au-Si eutectic Die attach, scanning electron microscopy of Au-Si eutectics Die cracking, relationship to Au-Si eutectic die attach Eutectic die attach- Au Si 85180 Matsumoto, H., Yamada, M., Fukushima, J., Kondoh, T., Tosa, M., Mitsubishi Electric Corp. New Filler-Induced Failure Mechanism in Plastic Encapsulated VLSI Dynamic MOS Memories Column failure in DRAM Filler induced local stress Plastic encapsulatation-failure induced by filler Plastic package and local stress caused by filler particles Plastic package cracking, finite element modelling Plastic package effect of filler particle grain size on reliability Plastic package failure Plastic package use of die coatings to reduce effects of stress Stress induced failure, effect of filler particles in plastic encapsulants Stress induced failure, simulation using tungsten probe 85184 Groothuis, S., Schroen, W., Murtuza, M., Texas Instruments Inc. Computer Aided Stress Modeling for Optimizing Plastic Package Reliability [OPA] Coulomb-Mohr Theory, theory of brittle fracture applied to plastic packaging Finite element analysis (FEA)- stress in plastic packages Finite element modeling, of plastic package stress Lead frame, comparison of Cu and alloy 42 with respect to package stress Plastic package cracking, effect of package materials on cracking Plastic package, finite element modeling of stress Plastic package, material properities and relationship to stress Strain guages, diffused piezoresistive test chips to measure package stress Stress induced failures, effect of material properities Stress induced failures, finite element modelling Stress mapping on chips Stress modelling in plastic packages Thermal coeffecient of expansion, effect on package stress and cracking 85192 Fukuzawa, I., Ishiguro, S., Nanbu, S., Oki Electric Industry Co., Ltd. Moisture Resistance Degradation of Plastic LSIs by Reflow Soldering Autoclave, effect of solder reflow on corrosion failures Corrosion of Al bonding pad Corrosion, effect of solder reflow Cracking in plastic packages (popcorn) Moisture resistance of plastic packages Plastic package cracking, effect of solder reflow Popcorn cracking, plastic package cracking during solder reflow Preconditioning, moisture exposure and reflow soldering before stress testing Solder reflow, effect on integrated circuit reliability Solder reflow, effect on package cracking Surface mount devices, package cracking during reflow soldering 85198 Agarwala, B.N., IBM Thermal Fatigue Damage in Pb - In Solder Interconnections C-4 joint Controlled collapse chip interconnects (C4's), effect of thermal cycling Cracks in solder bump Pb-In solder Solder bump Solder, empirical model of thermal fatigue Solder, role of crack nucleation and growth kinetics in thermal fatigue Solder, role of Cu intermetallics in thermal fatigue Solder, thermal fatigue of Pb-In solder interconnects Thermal cycling of solder bump Thermal cycling, fatigue of Pb-In solder interconnects Thermal fatigue in Pb-In solder 85206 Figueredo, D.A., Packwood, D.L., Hewlett Packard A Cause and Cure of H/fe Instability in Shallow Juncation Bipolar Microwave Transistors Bipolar current gain instability Titanium absorption of hydrogen 85212 Khurana, N., Maloney, T., Yeh, W., Intel Corp. ESD on CHMOS Devices - Equivalent Circuits, Physical Models and Failure Mechanisms ESD equilvalent circuits for CMOS output Impact of drain contact to poly gate space for ESD



	N-Channel lock-on mechanism, negative feedback Physical models of ESD dissipation Pulsed infrared imaging technique Runaway phenomena during ESD Transmission line pulsing technique 85224 Dallmann, A., Menzel, G., Wehl, F., Fox, F., Siemens AG Failure Analysis of ECL Memories by Means of Voltage Contrast Measurements and Advanced Preparation Al metallization, interlevel shorts Interlayer dielectric shorts Voltage contrast, use of in ECL memories 85228 Thomas, R.W., Calabrese, D.W., Rome Air Development Center The Identification and Elimination of Human Contamination in the Manufacture of IC's [OPA] Assembly process, contamination sources in Contamination, human Equipment design, human engineering of Potassium chloride from human spittle 86001 LaCombe, D.J., Parks, E.L., General Electric The Distribution of Electromigration Failures Early electromigration failures Electromigration performance Electromigration, early failure rate Electromigration, independent segment model Electromigration, statistical distribution approximating log-normal Line width dependent electromigration lifetime Log extreme value electromigration distribution Log normal electromigration lifetime distribution 86007 Towner, J.M., Dirks, A.G., Tien, T., Signetics Corp. Electromigration In Titanium Doped Aluminum Alloys Cu, in Al-Cu films segregates to grain boundaries Effect of Ti concentration on electromigration lifetime Electromigration activation energy Electromigration in Ti doped Al films Electromigration, titanium-doped Al Improved electromigration lifetime due to Ti doping Precipation, evidence obtained from TEM Precipitate formulation correlated with increase in activation energy Resistance increase due to electromigration Ti concentration, the influence on the activation energy forelectromigration Uniform thinning, in conductor segments 86012 McPherson, J.W., Texas Instruments Inc. Stress Dependent Activation Energy Bond stabilization in SiN film Electromigration failure Electromigration of Al line Eyring model, generalized Generalized Eyring model for activation energy Irradiation induced stress of relaxation and hydrogen Mercury light irradiation of PECVD SiN film Stress dependent activation energy Stress induced void formation Time-to-failure (TF) equation 86019 Clinton, R.R., Florida Institute of Technology A Novel Method for Measuring Nonuniformities in Metallization Temperatures of an Operating Integrated Circuit Electromigration temperature distribution; hillock and void formation Electromigration, observed at relatively low temperatures Electromigration, reversible hillock growth Hillocks, cooler spots on the chip Latex calibration spheres Measuring spatial variation in temperature using latex SEM calibration spheres Nonuniformities, measuring in metallization temperatures Temperature non-uniformities in metallization, measurement Void formation on hotter regions 86024 Koyama, H., Mitsubishi Electric Corp. Suppression of Stress Induced Aluminum Void Formation Al void formation, suppressed by Hg light irradiation SiN and/or Al film, FTIR and SIMS characterization Stress induced Al void formation



	Stress relaxation, light beam induced on SiN film Suppression of Al void formation 86030 Steenwyk, S.D., Kankowski, E.F., AT&T Bell Laboratories Electromigration in Aluminum to Tantalum Silicide Contacts Activation energy for open circuit failure Al and Si migration, result in 2 distinct failure modes Contact electromigration study of Al/Tantalum silicide contacts Electromigration, contact windows Median time to failure, relationship to current Nonohmic failure mechanism for silicidated contacts Role of Al migration and Si migration in silicidated contact EM study Stress temperature effect on failure mechanism on silicidated contact under EM stress Tantalum silicide contacts Void growth mechanism during EM stress of silicidated contacts Window geometry and deposition method 86038 Sadana, D.K., Towner, J.M., Norcott, M.H., Ellwanger, R.C., Signetics Corp. Some Tem Observations on Electromigrated AL and AL Alloy Interconnects Effect of electromigration on precipitate distribution Effect of precipitate distribution on electromigration lifetime Electromigration induced damage Electromigration induced void morphology Electromigration, phase induced changes Impurities, segregation to grain boundaries Microstructure, Al and Al alloys Transmission electron microscopy, performed on stressed films Transmissionm electron microscopy of electromigration induced damage 86044 Peck, D.S., Consultant Comprehensive Model for Humidity Testing Correlation Acceleration formula for correlating temperature/humidity test conditions Glass transition temperature affect on accelerated testing of plastic parts History of temperature/humidity testing of plastic parts Military application of plastic parts Plastic parts, humidity conditions vs life at 85°C/85% RH Plastic parts, humidity testing correlation model Test time reduction for plastic parts 86051 Miyamoto, K., Nakagawa, O., Mitsuhashi, J., Matsumoto, H., Mitsubishi Electric Corp. The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs Encapsulated resin, high temperature induced volume reduction Leakage current increase in P-N junctions under local mechanical stress RAM, MOS, Plastic encapsulated filler-induced long term failure 86055 Koch, T., Richling, W., Whitlock, J., Hall, D., Hewlett Packard A Bond Failure Mechanism Failure analysis, Au ball bonds, cratering/cracking Wire bond cratering/cracking caused by Si nodules in bond pad Wire bond failures in plastic encapsulated DIPS Wire bond failures the affect of plastic molding process 86061 Annamalai, N.K., Rome Air Development Center, Islam, S.M.R., Clarkson University Moisture Determination in IC Packages by Conductance Technique Internal moisture in IC packages, an A.C. conductance technique Internal moisture in IC packages,comparison of non-destructive techniques RGA data correlation to conductance technique for determining internal moisture 86069 Kane, D., Rome Air Development Center, Brizoux, M., Thomson-CSF Recent Developments on Moisture Measurement by Surface ConductivitySensors Internal moisture in IC packages, a surface conductivity technique Internal moisture in IC packages, the influence of DC bias Model, thermodynamic for surface conductivity sensors 86079 Guang-bo, G., An, C., Xiang,G., Beijing Polytechnic University A Layer Damage Model For Calculating Thermal Fatigue Lifetime of Power Devices Model, thermal fatigue lifetime of power semiconductors Power semiconductors, design of backside metallization Power semiconductors, solder quality evaluation Solder, layer damage failure mechanism 86087 King, R., Hiatt, J., Hewlett-Packard A Practical VLSI Characterization and Failure Analysis System for the IC User [OPA] Diagnostics, electrical Dynamic fault imaging (DFI)



	E-beam testing EEPROM, 2816A, 2K x 8 Equipment, diagnostic test Failure analysis technique Fault isolation, voltage contrast Gate array, 3900 gate IC UV EPROM, 256K and 512K VLSI failure analysis Voltage contrast Voltage contrast imaging 86095 Dallmann, A., Siemens AG Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy Dielectric integrity DRAM, dielectric breakdown Electron beam induced current (EBIC) Equipment analytical Failure analysis technique Gate oxides, defects Imaging, EBIC Localization, tunneling current microscopy Microscopy, tunneling current (TCM) Scanning Electron Microscopy (SEM) 86099 Lewis, S.H., IBM Infrared Microscopy as Applied to Failure Analysis of P-DIP Devices Al, corrosion, intermetallic formation Corrosion analysis Failure analysis technique Failure analysis, infrared microscopy Microscopy, infrared (IR) P-DIP Wire bonding analysis 86102 Footner, P.K., Richards, B.P., GEC Research Limited, Stephens, C.E., Amos, C.T., British Telecom A Study of Gold Ball Bond Intermetallic Formation in PEDs Using Infra-Red Microscopy Au-Al, Intermetallic formation Failure analysis technique Microscopy, infrared (IR) Plastic Encapsulated Devices, (PEDS) Si precipitates Wire bonding analysis 86109 Stivers, A.R., Ferguson, D.C., Intel Corp. Fault Contrast: A New Voltage Contrast VLSI Diagnosis Technique Diagnostics, electrical Dynamic fault imaging (DFI) E-beam testing Failure analysis technique Failure analysis, fault contrast Failure mode, clock frequency, supply voltag Fault contrast imaging Microprocessor, 80826, 16-bit Voltage contrast 86115 Wills, K.S., Pilch, C. J. Jr., Hyslop, A., Texas Instruments Inc. A Study of CMOS Latch-up by Laser Scanning and Voltage Contrast Techniques CMOS, 1 micrometer Failure mechanism, latch-up Failure technique, laser scanning Laser photocurrent injection Laser scanning imaging Latch-up, CMOS Voltage contrast imaging 86120 Tse, P.K., Gammel, J.C., Schimmel, D.G., Becker, W.H., Ballantyne, J.P., Riley, T.J., AT&T Bell Laboratories Failure Analysis and Failure Mechanisms of High Voltage(530V) GatedDiode Crosspoint Arrays Electrical overstress (EOS) Failure mechanism, dislocation network, edge effect Failure patterns, Gate corner, Gate, Gate center Field returns, simulated failures Gated diode crosspoint array (GDX) Gated diode, 530V, 5ESS Mesoplasma breakdown Microplasma breakdown



	86125 Millea, M.F., The Aerospace Corp. Gradual Degradation of GaAs FETs Under Normal Operation Degradation of GaAs FETs Drain current degradation GaAs FETs changes in drain resistance GaAs FETs, linear model for degradation Life time of GaAs FETs Parasitic channel conductance Temp coefficient 86132 Ogbonnah, D., Fraser, A., TriQuint Semiconductor, Inc. Reliability Investigation of 1 Micron Depletion Mode IC MESFETS Accelerated lifetests on GaAs FETs Activation energy, 1.6 eV Deep level trap spectroscopy of GaAs FETs GaAs MESFET, 1.0 micron depletion mode Gate metal diffusion in GaAs FETs Gate metal interdiffusion Life tests on GaAs FETs 86138 Wurfl, J., Institut fur Hochfrequenztechnik Field and Temperature Dependent Life-Time Limiting Effects of Metal-GaAs Interfaces of Device Structures Studied by XPS and Electrical Measurements Al contacts to GaAs Al Schottky GaAs Metal interdiffusion Stability of Al contacts to GaAs Stability of TiPdAu contacts to GaAs Ti/Pt/Au contacts X-ray photoelectron spectroscopy,XPS, of contacts to GaAs 86144 Anderson, W.T., Bout, F.A., Christou, A., Naval Research Laboratory, Anand, Y., M/A-COM Semiconductor Products, Inc. High Power Pulse Reliability of GaAs Power FETs Al Au Burnout Degradation of high power GaAs FETS GaAs Metal bridging in high power GaAs FETS Metal interdiffusion Power FETs RF (radio frequency) pulse damage to GaAs FETS Subsurface burnout in GaAs FETS Ti/Pt 86150 Russell, K.J., Dhiman, J.K., California Institute of Technology Power GaAs FET RF Life Test Using Temperature-Compensated Electrical Stressing Accelerated life test of GaAs FETS, bias temperature relations Activation energy, 1.5 eV Failure modes of power GaAs FETS GaAs FETS, temperature-electric field relations Gate metal voiding Life test of power GaAs FETS Power GaAs FET, 2W 86157 Cong, H.I., Cunniff, K.F., Tyson, J.A., Kolodner, P.R., AT&T Bell Laboratories Device Leakage Investigation Using Flourescent Microthermography Failure analysis technique Fluorescent microthermography Hot spots Thermal imaging 86164 Lin, M.R., Yue, J.T., Advanced Micro Devices Impact of Ceramic Packaging Anneal on Reliability of Al Interconnects Ceramic DIP, process related cross-sectional metal line reduction Metal void, stress induced Si nodules, stress induced 86172 Bonges, H.A. III, IBM Radial Dependency of Reliability Defects on Silicon Wafers Ceramic DIP anneal temperature profiles Si wafer, method for permanently identifying individual DIE Si wafer, radial dependency on reliability defects



	86175 Yao, C., Tzou, J.J., Cheung, R., Chan, H., Advanced Micro Devices Temperature Dependence of CMOS Device Reliability CMOS device reliability, temperature dependence CMOS device reliability,trade-offs with performance Hot-carrier induced device degradation Latch-up characteristics as a function of temperature, material and geometry Oxide breakdown correlated to positive charges at high injection levels 86183 Manchanda, L., AT&T Bell Laboratories Hot-Electron Trapping and Generic Reliability of p+ Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology Boron doped polysilicon, effect on oxide trapping Hot-electron trapping in p+ polysilicon oxides Hydrogen anneal, interaction with boron impurities p+ polysilicon, effect on oxide trapping Role of boron in oxide trapping 86189 Khurana, N., Chiang, C.-L., Intel Corp. Analysis of Product Hot Electron Problems by Gated Emission Microscopy [BPA] Emission microscopy Hot-electron problems, optical localization of Optical observation of impact ionization 86195 Cahoon, E.C., Thornewell, K., Tsai, P., Gukelberger, T., Sylvestri, J., Orro, J., IBM Hot Electron Induced Retention Time Degradation in MOS Dynamic Rams DRAM, hot electron DRAM, retention time degradation DRAM, thermal leakage 86199 Duvvury, C., McPhee, R.A., Baglee, D.A., Rountree, R.N., Texas Instruments Inc. ESD Protection Reliability in 1 M CMOS Technologies ESD protection & lightly doped drain (LDD) ESD protection & silicided diffusions, ESD protection circuit failure mechanisms 86206 DeChiaro, L.F., Bell Communications Research, Viadya, S., AT&T Bell Laboratories, Chemelli, R.G., Bell Communications Research Input ESD Protection Networks for Fineline NMOS-Effects of Stressing Waveform and Circuit Layout CDM vs HBM ESD susceptibility levels ESD protection, charged device model (CDM), thin gate oxide damage ESD protection, human body model, (HBM), device geometry related ESD protection, NMOS fineline, failure threshold 86215 Baglee, D.A., Shih, P., Yashiro, M., Texas Instruments Inc. Reliability of Trench Capacitors for VLSI Memories Electrical properties of oxides grown in trenches Field tunneling oxide/nitride trench capacitors Reliability of trench capacitors Soft error rates for trench capacitor DRAMS Trench profile effects Wearout of trench capacitors 86220 Canali, C., Universita di Padova, Fantini, F., Telettra S.p.A., Giannini, M., Senin, A., Ing. C. Olivetti S.p.A., Zanoni, E., Universita di SEM Studies of Time Evolution and Sensitivity of Latch-up in CMOS ICs Electron beam testing system Latch-up in CMOS Latch-up layout analysis Latch-up triggering analysis Stroboscopic voltage contrast Time evolution of latch up Voltage contrast method 86230 Leblanc, A.R., Abadeer, W.W., IBM Behavior of SiO2 Under High Electric Field/Current Stress Conditions Dielectric burn-in condition determination Dielectric degradation under high fields Oxides, stressed, reliability Si/SiO2 interface, hole & electron traps creation 86235 Ishiuchi, H., Watanabe, T., Tanaka, T., Kishi, K., Ishikawa, M., Goto, N., Kohyama, K., Noji, H., Ozawa, O., Toshiba Corp. Soft Error Rate Reduction in Dynamic Memory with Trench Capacitor Cell Alpha-particle-induced soft error, SER Alpha-particles



	DRAM, 256K NMOS, grounded cell plate, 2 micrometer DRAM, dynamic memory, trench capacitor cell Failure mode, bit line mode, cell mode Soft error rate (SER) testing Soft errors Trench capacitor 86239 Osenbach, J.W., AT&T Bell Laboratories Controlled Surface Contamination to Determine Surface Sensitivity of HVICS Surface contamination, critical levels vs geometry, voltage and insulation Surface contamination, model for high voltage semiconductor failures Surface contamination, technique for depositing a controlled level 86247 Shinada, K., Matsikawa, N., Morita, S., Mikata, Y., Usami, T., Nozawa, H., Toshiba Corp. Reliability of Thin Oxide Grown on Heavily Doped Polysilicon Fowler-Nordheim Poly-oxide, TDDB measurements, vs phosphorus in polysilicon Tunnel oxide vs poly-oxide wearout 86253 Hieber, H., Simon, T., Philips GmbH Forschungslaboratorium Thermo-Mechanical Cycling Behavior of AL Thin-Film Metallization Al-alloy metallization creep relaxation Al-alloy metallization lattice defect kinetics, electrical measurement Al-alloy metallization stress relaxation Al-alloy metallization thermo-mechanical stress cycling AlCu0.016 films Coble creep Measurement: lattice defect kinetics Nabarro-Herring creep 87001 Groothuis, S.K., Schroen, W.H., Texas Instruments Inc. Stress Related Failures Causing Open Metallization Stress relaxation Stress voiding, Al Stress voiding, effect of passivation Stress voiding, effect of Si precipitates Stress voiding, effect of topography Stress voiding, open circuit Stress, Al Stress, finite element analysis 87009 Jones, R.E. Jr., Inmos Corp. Line Width Dependence of Stresses in Aluminum Interconnect Stress voiding, Al Stress voiding, open circuit Stress voiding, variation with conductor linewidth Stress, finite element analysis 87015 Mayumi, S., Umemoto, T., Shishino, M., Nanatsue, H., Ueda, S., Inoue, M., Matsushita Electronics Corp. The Effect of Cu Addition to Al-Si Interconnects on Stress Induced Open-Circuit Failures Stress voiding, Al Stress voiding, effect of Cu addition in Al Stress voiding, open circuit Stress voiding, variation with conductor linewidth 87022 Yoshimaru, M., Matsuhasi, H., Ajioka, T., Matsui, H., Oki Electric Industry Co., Ltd. Moisture Resistance of Borophosphosilicate Glass Films Corrosion, Al Dielectric, BPSG, PSG Moisture absorption Threshold voltage shift, moisture related 87028 Rita, K.N., Stacy, W.T., Broadbent, E.K., Signetics Corp. The Microstructure of Ball Bond Corrosion Failures Ball bond failure, microstructure Corrosion Intermetallic formation, Au-Al Oxidation Purple plague Wire bond, Au 87034 Will, F.G., Janora, K.H., McMullen, J. G., Yerman, A.J., General Electric Corrosion of Aluminum Metallization Through Flawed Polymer Passivation Layers: In-Situ Microscopy Corrosion process, time-lapsed video monitoring



	Corrosion, Al 87042 Scarff, P.L., Iannuzzi-Glogovsky, M., AT&T Bell Laboratories Novel Failure Mechanism and Anomalous Acceleration Factor on a Beam-Lead IC Beam lead IC Corrosion Moisture Package 87050 Watanabe, T., Goto, N., Yasuhisa, N., Yanase, T., Tanaka, T., Shinozaki, S., Toshiba Corp. Highly Reliable Trench Capacitor With Sio2/Si3N4/Sio2 Stacked Film Si3N4 deposited using LPCVD Trench MIS capacitor, trapped electrons in Si 3N4 suppress leakage Trench MOS capacitor leakage current from E-field enhancement at Si convex corner 87055 Ohji, Y., Kusaka, T., Yoshida, I., Hiraiwa, A., Yagi, K., Mukai, K., Kasahara, O., Hitachi ltd. Reliability of Nano-Meter Thick Multi-Layer Dielectric Films on Poly-Crystalline Silicon Dielectric films on poly-Si Films, very thin, oxidized CVD-silicon-nitride (SiO2/Si3N4, equivalent to 7-13nm SiO2) Pool-Frenkel data for SiO2/Si3N4 films on poly-crystalline Si Thin dielectric reliability importance 87060 Mitsuhashi, J., Muto, H., Ohno, Y., Matsukawa, T., Mitsubishi Electric Corp. Effect of p-SiN Passivation Layer on Time-Dependent Dielectric Breakdown in SiO2 ESR for structual analysis for interface states Hydrogen diffusion to the SiO2-Si interface Mechanical stress by p-SiN layer degradation of TDDB 87066 Nguyen, T.N., Olivo, P., IBM, Ricco', B., Universita' di Bologna A New Failure Mode of Very Thin (<50A) Thermal SiO2 Films Leakage by thermally-assisted tunneling through locally-reduced barriers (0.9V) Low field leakage TDDB overestimation of reliability of thin oxides 87072 Khurana, N., Chiang, C.-L., Intel Corp. Dynamic Imaging of Current Conduction in Dielectric Films by Emission Microscopy [BPA] Emission microscopy for locating oxide defects in VLSI Movie of real time of images of dielectric breakdown, `The Death of an Oxide' 87077 Lin, D.L., Strauss, M. S., Welsher, T.L., AT&T Bell Laboratories On the Validity of ESD Threshold Data Obtained Using Commericial Human-Body Model Simulators Electrothermomigration ESD simulator analysis ESD threshold variations p-n junction failure modes Waveform measurement technique 87085 Mielke, N., Fazio, A., Liou, H.-C., Intel Corp. Reliability Comparison of Flotox and Textured-Polysilicon E2Proms [OPA] Alpha strikes, effect on floating gate Component failure rates, effect of memory size EEPROM data retention and lifetime performance EEPROM endurance, evaluation methods EEPROM memory cells Flotox process Gate oxide breakdown Textured-Polysilicon process Trap up failures Tunnel oxide 87093 Baglee, D.A., Sugawara, T., Fukawa, S., Mori, K., Bellay, L.M., Miller, T., Texas Instruments Inc. The Effects of Processing on Eeprom Reliability Charge trapping Data retention testing EEPROM reliability, effects of processing EEPROM write/erase endurance Nitride passivation Oxide passivation Oxide/nitride passivation Trap formation Tunnel oxidation processing



	87097 Kashiwagi, S., Takase, S., Usui, T., Ohono, T., Fujitsu Ltd. Reliability of High Frequency High Power GaAs MESFETs GaAs MESFET MTTE, effect of gate width GaAs MESFET reliability Gate electrode void formation Gate source/drain shorting MESFET, FLM7785-4e,flk022WG 87102 Kretschmer, K.-H., Hartnagel, H.L., Institut fur Hochfrequenztechnik Interelectrode Metal Migration on GaAs Au-Germanium-Nickel migration on GaAs GaAs ohmic contact, metal migration on GaAs GaAs surface treatment effects on ohmic contact degradation Interelectrode Metal migration on GaAs Si Nitride/GaAs surface preparation, Effects on Metal migration on GaAs Spectroscopy, X-Ray photoelectron on GaAs surfaces ohmic contact, migration 87107 Rauwerdink, J.L., Harris Semiconductor Computer Guided Logic IC Fault Location Computerized IC fault location Failure analysis techniques Fault locating process on an IC Guided -probe fault location Guided fault location IC fault location Semi-custom logic ICs Sprint logic simulation software Stuck fault diagnosis 87111 Mashiko, Y., Morimoto, H., Koyama, S., Mitsubishi Electric Corp., Kaito, T., Adachi, T., Seiko Instruments Inc. A New VLSI Diagnosis Technique: Focused Ion Beam Assisted Multi-level Circuit Probing Chemical vapor CVD of tungsten (W) with FIB Deposition (CVD) with FIB Design verification and debugging of VLSI devices with FIB and CVD Direct probing of internal circuit node on a VLSI multi-level chip Focused ion beam, (FIB) Ion beam assisted CVD Micro-machining and metal deposition with FIB Multilevel circuit probing VLSI diagnostic technique 87118 Miller, E.L., Boeing Aerospace Company Gated-Pulse Stroboscopy for Passivated Device Imaging Charging effects Electron beam testing Failure analysis techniques Failure analysis tools Gated pulse stroboscopy for device imaging Stroboscopic voltage contrast Voltage contrast imaging of passivated devices 87126 Kim, M.J., North American Philips Corp., Skelly, D.W., Brown, D.M., General Electric Electromigration of Bias-Sputtered Al and Comparison with Others DC bias sputtered Electromigration of bias-sputtered Al Impurities, Cu Ti and/or Si relating to electromigration properties Meantime to failure (MTF) of Al and other metals Topography of conductors, electromigration failure 87130 Kwok, T., IBM, Nguyen, T., Massachusetts Institute of Technology, Ho, P., IBM, Yip, S., Massachusetts Institute of Technology Current Density and Temperature Distributions in Multilevel Interconnection with Studs and VIAS Current crowding and local heating Current density and temperature, finite element method for calculation Current density distributions Current density peaks Electromigration in multilevel interconnection Finite element method Numerical calculation Studs and vias, structures in multi-level interconnection Temperature distributions Vias and studs in multilevel interconnection



	87136 Brooke, L., Digital Equipment Corp. Pulsed Current Electromigration Failure Model Best effective current density for pulse current stress Constant current lifetests Dielectrics and passivation appear to influence the activation and failure Electromigration, pulsed current failure model EM model on Al/Si conductors stressed under square wave pulsed condition Median time-to-failure, current stressing Passivation role in EM electromigration study Pulsed current stress 87140 Strausser, Y.E., Euzent, B.L., Smith, R.C., Tracy, B.M., Wu, K., Intel Corp. The Effect of Metal Film Topography and Lithography on Grain Size Distributions and on Electomigration Effect of topology on electromigration performance Electromigration, dependence of mean time to failure of topography Extrapolation of electromigration performance from test structures Failure, higher incidence at `'step'' locations Grain size dependence on topology and vias Metal film topography and lithography Poly-step and contact step, open location between the two Realistic structures for electromigration test circuits Step coverage effects on electromigration 87145 Maiz, J.A., Sabi, B., Intel Corp. Electromigration Testing of Ti/Al-Si Metallization for Integrated Circuits Barrier metal systems Electromigration, a new failure criteria Electromigration, multilayer metallization Failure criteria for sandwich metallization system during EM stress Increase in resistance as a function of gap opened in Al/Si line for sandwiched metallization system under stress Large resistance transient in EM stress of Ti/Al-Si metallization system Line resistance fluctuation mechanism in refractory metal/Al sandwich metal. sys., role of: current density/oven temp./passivation layer Metalization, diff. between single Al Si metal & sandwiched Ti/Al-Si metal: stress behavior & fail. analysis Resistance transients during electromigration stressing Ti/Al-Si films, resistance measurements 87154 Ondrusek, J.C., Dunn, C.F., McPherson, J.W., Texas Instruments Inc. Kinetics of Contact Wearout for Silicided (TiSi2) and Non-SilicidedContacts Depletion related leakage failures Diffusion of Si in Al Electromigration failure kinetics in contacts Electromigration in contacts; Si accumulation and depletion Electromigration in silicided (TiSi2) vs. non-silicided contacts Electromigration test structures for contacts Failure kinetics for both titanium silicided and non-silicided contacts Junction spiking due to Si depletion Si accumulation in the contact window 87161 Lloyd, J.R., Koch, R.H., IBM Study of Electromigration-Induced Resistance and Resistance Decay in Al Thin Film Conductors Activation energy of Electromigration induced resistance changes Al and AlCu alloy Electromigration performance Decay in resistance measured after cessation of stressing Effect of TiW barriers on electromigration performance Electromigration damage in Al Electromigration induced resistance change Electromigration lifetime of DC bias sputtered Resistance decay Resistance increase due to vacancy supersaturation Resistance, AC wheatstone bridge network used Resistance, linear increase with time Thermal fluctuations effects eliminated in resistance measurements Vacancy supersaturation 87169 Momodomi, M., Horiguchi, F., Ogura, M., Kozuka, E., Toshiba Corp. A Circular Output Protection Device Using Bipolar Action Circular layout of protection devices Local heating during ESD Output ESD protection Parasitic bipolar protection for ESD Parasitic bipolar transistors Post ESD stress leakage



	87174 Duvvury, C., Rountree, R.N., Texas Instruments Inc., Fong, Y., University of California, Berkeley, McPhee, R.A., Texas ESD Phenomena and Protection Issues in CMOS Output Buffers [OPA] CMOS output buffers ESD reliability of silicided diffusions Failure modes in silicided NMOS devices Lateral and vertical NPN devices for ESD Metal melt filaments Output buffer ESD protection Parasitic base-emitter diode Polysilicon melt filaments 87181 Bout, F.A., Anderson, W.T., Christou, A., Sleger, K.J., Naval Research Laboratory, Chase, E.W., Bell Communications Research Theoretical and Experimental Study of Subsurface Burnout and ESD in GaAs FETs and HEMTs Charge Device Model Drain and gate short failures ESD phenomena in GaAs FETs Failure analysis by SEM Hot-electron energy density profiles Metallization contacts for high temperature stability Ohmic metallization failures Recessed channel FET design Surface burnout in GaAs FETs Thermal runaway process in GaAs Two-dimensional numerical simulations for ESD 87191 Cham, K.M., Hui, J., Vande Voorde, P., Fu, H.S., Hewlett Packard Laboratories Self-Limiting Behavior of Hot Carrier Degradation and its Implication on the Validity of Lifetime Extraction by Accelerated Stress Hot-carrier degradation in n-channel MOSFETs Lifetime projection by accelerated stress 87195 Yao, C., Tzou, J.J., Cheung, R., Chan, H., Advanced Micro Devices, Yang, C., Santa Clara University Structure and Frequency Dependence of Hot-Carrier-Induced Degradation In CMOS VLSI CMOS buried channel vs surface channel CMOS twin-tub technology Hot-carrier-induced degradation, DC stress vs AC stress Hot-electron model 87201 Duvvury, C., Redwine, D., Kitagawa, H., Haas, R., Chuang, Y., Beydler, C., Hyslop, A., Texas Instruments Inc. Impact of Hot Carriers on Dram Circuits Drain avalanche hot-carrier injection mechanism DRAM parameter degradation 87207 Takeda, E., Takeuchi, K., Toyabe, T., Ohshima, K., Itoh, K., Hitachi Ltd. Key Factors in Reducing Soft Errors in Mega-Bit Drams—Funneling and Scalability—- Alpha particle induced soft errors Device simulator, 3-D Scaling law for soft errors 87212 Mizugashira, S., Higuchi, H., Ajiki, T., Matsushita Electronics Corp. Improvement of Moisture Resistance by ION-Exchange Process Die-bonding conchoidal fracture IC mechanical stress IC package corrosion failure IC package reliability Impurity ion, ion-exchange process Inorganic metal-oxide molding compound Moisture resistance, soldering heat stress SMD Al solder corrosion SMD moisture resistance SMD pad Al corrosion failure Surface Mount Device (SMD) reliability Surface Mount Devices (SMD) 87216 Hawkins, G., Berg, H., Mahalingam, M., Lewis, G., Lofgran, L., Motorola, Inc. Measurement of Silicon Strength as Affected By Wafer Back Processing Ball breaker test Finite element modeling of ball breaker test Fracture strength of Si IC package reliability Integrated circuit mechanical stress Packaged die fracture reliability Si flaws Si strength, wafer back processing



	Si wafer-back processing fractures Stress analysis Wafer lapping, grinding and etching influence on die cracking reliability 87224 McPherson, J.W., Bednarz, G.A., Texas Instruments Inc. A Novel Thermal Expansion Matched Heatspreader For Plastic Encapsulation of Silicon Chips DIP heat dissipation DIP package heat spreader DIP, 40 pin - 600 mil Heat spreader, SiC on graphite IC package reliability Package influence on die wearout Plastic package, thermal resistance Si-carbon/graphite composite heat spreader SiC heat conductivity Thermal expansion matching VLSI chip packaging 87229 Nolder, R.L., Malone, D.N., Hughes Aircraft Company Analysis of a Silver Substrate, Gold-Silicon Preform, Die Attach System Au-Ag preform cracking Au-Ag preform for die attach Au-Ag-Si alloy cracking failure Au-Ag-Si die bonding cracking failure Au-Ag-Si ternary phase diagram Die attach, Ag substrate, Au-Si preform Eutectic divorcement in Au-Ag-Si alloy IC package reliability Phase diagram, Au-Si-Ag 87238 Shirley, C.G., Blish, R.C. II, Intel Corp. Thin-Film Cracking and Wire Ball Shear in Plastic Dips Due to Temperature Cycle and Thermal Shock Al bussers, slotted Ball bond shear failure CMOS Cu lead frame reliability Failure modes, thin film cracking, wire ball shear IC package reliability Lead frame material influence on ball bond shear failure Lead frame thermal cycle test Lead frame thermal shock test Lead frame, Cu, alloy 42 Plastic DIPS Plastic encapsulated die passivation cracking Polysilicon resistor cracking failure Silicon dioxide cracking Silicon dioxide delamination Wire-bus-wire resistor failure 87250 Lau, J., Harkins, G., Rice, D., Kral, J., Hewlett-Packard Thermal Fatigue Reliability of SMT Packages and Interconnections Ceramic leaded chip carriers, CLCC CLCC, Alloy 42 J-leads Geometry effects on interconnection and packaging reliability IC package fatigue IC package reliability J-Lead finite element model Lead-tin (PbSn) eutectic solder fatigue Low-cycle strain-controlled fatigue Plastic leaded chip carriers (PLCC) thermal stress fatigue PLCC stress PLCC with Alloy 42 J-leads, 68 pins Reliability of J-leads SMC, PLCC with Cu J-leads, 68 pins Solder alloy, 63wt% Sn- 37wt% Pb Surface mount carrier (SMC)/SMD thermal stress fatigue Surface Mount Technology (SMT) Thermal fatigue of J-leads Thermal fatigue of PbSn solder fillets Thermal shock test Thermal stresses and strain, nonlinear finite element analysis 88001 Chen, I.C., Chan, T.Y., Chio, J.Y., Ong, T.C., Hu, C., University of California, Berkeley The Effect of Channel Hot Carrier Stressing on Gate Oxide Integrity in MOSFET Channel hot-carrier reliability Gate to drain breakdown, snapback induced



	MOSFET gate oxide integrity, effect of channel hot-carrier stressing. TDDB Thin gate oxide wearout 88008 Bellens, R., Heremans, P., IMEC vzw A New Procedure for Lifetime Prediction of N-Channel Mos-Transistors Using the Charge Pumping Technique Charge pumping technique, N-channel MOS Hot-carrier reliability MOS transistor reliability Transistor lifetime prediction, hot-carrier related 88015 Aur, S., Chatterjee, A., Polgreen, T., Texas Instruments Inc. Hot Electron Reliability and ESD Latent Damage ESD performance, impact of hot-carrier degradation ESD to hot-carrier degradation comparison Hot-carrier reliability, impact of ESD latent damage 88019 Duvvury, C., Rountree, R.N., Adams, O., Texas Instruments Inc. Internal Chip ESD Phenomena Beyond the Protection Circuit Gate-drain shorts Interlevel oxide rupture Internal chip ESD Liquid crystal analysis for ESD Parasitic base-emitter diode Parasitic NPN devices Post ESD stress leakage Stress dependent ESD behavior Stress leakage Total CMOS ESD protection VDD-VSS ESD protection 88026 Chatterjee, A., Aur, S., Niuya, T., Seitchik, J.A., Texas Instruments Inc. Failure in CMOS Circuits Induced by Hot Carriers in Multi-gate Transistors CMOS reliability, impact of hot-carriers on multi-gate PMOS transistors Multi-gate transistor hot-carrier reliability 88030 Cham, K.M., Fu, H.S., Nishi, Y., Hewlett Packard The Dependence of Hot Carrier Degradation on A.C. Stress Waveforms AC hot-carrier reliability. AC inverter hot-carrier reliability DC vs AC hot-carrier lifetime miscorrelation Submicron NMOS transistor reliability 88034 Sugano, Y., Minegishi, S., Sumi, H., Itabashi, M., Sony Corp. In-Situ Observation and Formation Mechanism of Aluminum Voiding Stress voiding, Al Stress voiding, effect of passivation Stress voiding, observation of growth 88040 Khan, M., Fatemi, H., Romero, J., Delenia, E., Advanced Micro Devices Effects of High Thermal Stability Mold Material on the Gold-Alumiinum Bond Reliability in Epoxy Encapsulated VLSI Intermetallic, Au-Al Molding compound, effect on bond failure Purple plague Wire bond, Au 88050 Fan, S.K., McPherson, J.W., Texas Instruments Inc. A Wafer-Level Corrosion Susceptibility Test for Multilayered Metallization Corrosion, Al Corrosion, effect on metallization resistance Corrosion, wafer level test structure 88059 Koyama, H., Shiozaki, H., Okumura, I., Mizugashira, S., Higuchi, H., Ajiki, T., Matsushita Electronics Corp. A New Bond Failure Wire Crater in Surface Mount Device Al-Si metallization, Si nodule Al-Si-Cu metallization, Si nodule Failure mode, wire crater SMD, SOP, QFP 88064 Ching, T.B., Schroen, W.H., Texas Instruments Inc. Bond Pad Structure Reliability Al, titanium tungsten metallization Bond pads, oxide integrity Multilevel oxide, MLO Plastic package, bonding stress



	88071 Kitagawa, H., Maeda, T., Murata, S., Maki, T., Kaeriyama, T., Hyslop, A., Nishimura, A., Texas Instruments Inc. Plastic Packaging Stress Induced Failure in TiW/Al-Si Metal to Silicide Contacts Contacts, silicide, TiSi2 DRAM Plastic package, stress Shear stress, plastic deformation TiW/Al-Si metallization 88076 Lund, R.E., Unisys Corp. Gold-Silicon Fiber Shorts in VLSI Devices Intermittent shorts, Au-Si particles Phase diagram, Au-Si Scrub-in, oxidizing temperatures VLSI 88083 Lin, R., Blackshear, E., Serisky, P., IBM Moisture Induced Package Cracking in Plastic Encapsulated Surface Mont Components During Solder Reflow Acoustic microscopy (C-SAM & SLAM) inspection of packaging cracking Moisture absorption & threshold below package cracking SMC, such as 68/84 PLCC & 100 QFP, concerns with package cracking, & wire bond failures Solder (vapor phase) reflow, component temperatures 215 - 260°C Solder (vapor phase) reflow, package cracking, wire bond failure 88090 Kitano, M., Nishimurs, A., Kawai, S., Nishi, K., Hitachi Ltd. Analysis of Package Cracking During Reflow Soldering Process Moisture diffusion SMD Solder reflow, package cracking Stress analysis 88096 Anderson, W.T., Christou, A., Buot, F.A., Naval Research Laboratory, Archer, J., Bechtel, G., Cooke, H., Pao, Y.C., Varian Associates, Simons, M., Research Triangle Institute, Chase, E.W., Bell Communications Research Reliability of Discrete MODFETs: Life Testing, Radiation Effects, and ESD Charge trapping ESD, human body model Field assisted channel doping GaAs subsurface burnout GaAs/AlGaAs MESFET reliability Persistent photo conductivity Pulsed electron radiation Radiation hardness levels 88102 Umemoto, Y., Matsunaga, N., Mitsusada, K., Hitachi Ltd. Alpha-Particle-Induced Soft-Error Mechanism in Semi-Insulating GaAsSubstrate Alpha-particle-induced charge measurement circuit Charge collection, bipolar mechanism GaAs alpha-particle-induced soft error Semi-insulating GaAs substrate Soft error, charge collection mechanism 88109 Takeda, E., Hisamoto, D., Toyabe, T., Hitachi Ltd. A New Soft-Error Phenomenon in VLSIs The alpha-particle-induced source/drain penetration (ALPEN) effect ALPEN-effects, bipolar emitter-to-collector short ALPEN-effects, CMOS latch-up ALPEN-effects, impact on device scaling ALPEN-effects,parasitic MOSFET punchthrough Alpha-particle-induced soft error Alpha-particle-induced source/drain penetration (ALPEN) effect Caddeth 3-D device simulator Funneling current 88113 Dallmann, A., Bollmann, D., Menzel, G., Siemens AG Investigation of the EBIC/TCM-Method and Application to VLSI-Structures EBIC analysis of trench capacity Electron beam induced current (EBIC) analysis of Gate Oxide Laser simulated TCM Oxide breakdown analysis Tunneling current microscopy (TCM) analysis of Gate Oxide 88119 Lim, S-C., Tan, E.-G., Intel Corp. Detection of Junction Spiking and its Induced Latch-up By Emission Microscopy [OPA] Contact spiking Emission microscopy



	EOS/ESD induced junction spiking Junction spiking induced latch-up SCR latch-up 88126 Conrad, T.R., Mielnik, R.J., Musolino, L.S., AT&T Microelectronics A Test Methodology to Monitor and Predict Early Life Reliability Failure Mechanisms Burn-in stress Early life failure modes Early life reliability monitor Infant mortality model OLT results, linear ICs Operational life test (OLT) Statistical reliability analysis (STAR) 88131 Lee, J., Chen, I-C., Hu, C., University of California, Berkeley Statistical Modeling of Silicon Dioxide Reliability [BPA] Dielectric lifetime reliability prediction, screen optimization Dielectric reliability, impact of processing Dielectric reliability, intrinsic breakdown model Silicon dioxide reliability, statistical modeling 88139 Murakami, S., Kagami, T., Sugawara, Y., Hitachi Ltd. Investigation of Instability in Multi-Layer Dielectric Structures High voltage integrated circuit reliability, impact of passivating layers MIS diode and PNPN thyristor bias/temperature aging Multilayer dielectric instability 88145 Wang, Y., Nishioka, Y., Ma, T.P., Barker, R.C., Yale University Radiation and Hot-Electron Hardness of SiO2/Si Grown in O2 With Trichloroethane Additive Radiation hardness and hot-carrier reliability of O2/TCA grown oxides Thermal SiO2 grown in O2 with Trichoroethane (TCA) additive 88150 Wulf, F., Braunig, D., Hahn-Meitner-Institut Berlin GmbH, Nickel, W., Siemens AG Reliability Prediction of MOS Devices: Experiments and Model for Charge Build Up and Annealing Bias/temperature MOS degradation mechanisms Bias/temperature to ionizing radiation stress correlation MOS transistor reliability 88158 Verma, G., Mielke, N., Intel Corp. Reliability Performance of ETOX Based Flash Memories Charge loss reliability. DC program disturb reliability. Flash memory reliability. Single transistor floating-gate memory cell reliability 88167 Hefley, P.L., McPherson, J.W., Texas Instruments Inc. The Impact of an External Sodium Diffusion Source on the Reliability of MOS Circuitry MOS reliability, impact of sodium contamination Nonvolatile-memory reliability, effect of sodium contamination Sodium contamination, EPROM reliability failure model 88173 Hoang, H., Texas Instruments Inc. Effects of Annealing Temperature on Electromigration Performance of Multilayer Metallization Systems Al-1%Si Contact-barrier metallurgy Electromigration activation energy Electromigration effects of annealing temperature Electromigration multilevel metallization Multilayer metallization effect of annealing temperature Multilayer metallization material interactions Sheet resistance effect of annealing temperature Ti/W/Al-1%Si Ti:W/Al-1%Si 88179 Ondrusek, J.C., Nishimura, A., Hoang, H.H., Sugiura, T., Blumenthal, R., Kitagawa, H., McPherson, J.W., Texas Instruments Inc. Effective Kinetic Variations with Stress Duration for Multilayered Metallizations Activation energy failure criterion Al-1%Si Current exponent failure criterion Electromigration failure criterion activation energy Electromigration failure criterion current exponent Electromigration failure criterion multilayer metallization Electromigration failure criterion t50



	Electromigration resistance change Electromigration void formation Multilayer metallization failure criterion t50 failure criterion TCR effect of void formation Ti/W/Al-1%Si Ti:W/Al-1%Si 88185 Kwok, T., IBM Effect of Metal Line Geometry on Electromigration Lifetime in Al-Cu Submicron Interconnects Al-4 wt% Cu Electromigration t50, effect of line length Electromigration t50, effect of line thickness Electromigration t50, effect of linewidth 88192 Schafft, H.A., Lechner, J.A., National Bureau of Standards, Sabi, B., Mahaney, M., Smith, R.C., Intel Corp. Statistics For Electromigration Testing [OPA] Data censoring electromigration Data censoring reduction of testing time Electromigration testing confidence intervals Electromigration testing data censoring Electromigration testing measurement precision Electromigration testing reduction of testing time Electromigration testing sample estimates of: t50, tx, sigma Electromigration testing sample size Electromigration testing statistical analysis Electromigration testing uncertainty of stress conditions Maximum likelihood estimators Perrson and Rootzen estimators Statistical analysis electromigration failure-time data 88203 Cottle, J.G., Chen, T.M., University of South Florida, Rodbell, K.P., IBM A Comparison Between Noise Measurements and Conventional Electromigration Reliability Testing Al Al-0.67 wt% Cu Al-1.9 wt% Cu Electromigration activation energy Electromigration noise measurements Electromigration t50 measurements Noise measurements 1/f noise Noise measurements 1/f2 noise Noise measurements activation energy Noise measurements electromigration Nondestructive testing noise measurements TCR TEM measurements 88209 Maiz, J.A., Intel Corp., Segurs, I., Unversity of Navarra A Resistance Change Methodology For The Study of Electromigration in Al-Si Interconnects Al-Si Electromigration testing activation energy Electromigration testing correlation t50 and resistometric methods Electromigration testing current exponent Electromigration testing DC resistance Electromigration testing rate of resistance change Electromigration testing resistometric method 88216 Lloyd, J.R., Shatzkes, M., Challener, D.C., IBM Kinetic Study of Electromigration Failure in Cr/Al-Cu Thin Film Conductors Covered with Polymide and the Problem of the Stress Dependant Activation Energy Cr/Al-4 at% Cu Electromigration activation energy Electromigration current exponent Electromigration failure sites Electromigration passivation Electromigration temperature gradients Electromigration test structures Electromigration thermal analysis Passivation polyimide 88226 Green, T.J., Rome Air Development Center A Review of IC Fabrication Design and Assembly Defects Manifested as Field Failures in Air Force Avionic Al metallization, four micrometers Field failures, cracked die



	Microprocessor, die 274 x 276 mils, Au-Si eutectic NMOS Solder joint, excessive vibration UV ROM, 16 bit 88230 Umemura, E., Onoda, H., Madokoro, S., Oki Electric Industry Co., Ltd. High Reliable Al-Si Alloy/Si Contacts by Rapid Thermal Sintering Al-Si metallization Contact resistance, change Rapid thermal annealing, sintering Si nodule, formation 88234 Hieber, H., Philips GmbH Forschungslaboratorium Fatigue of Soft-Solder Contacts at Surface-Mounted Devices SMD Soft-soldered contacts, fatigue Solder, SnPb40, microstructure, strain Strain, holographic interferometry 89001 Boyko, K.C., Gerlach, D.L., AT&T Bell Laboratories Time Dependent Dielectric Breakdown of 210 Å Oxides TDDB, electric field dependence TDDB, linear vs. reciprocal field model TDDB, standard deviation vs electric field 89009 Koa, D.B., Advantage Production Technology, Inc., deLarios, J.M., Helms, C.R., Stanford University, Deal, B.E., Advantage Production Technology, Inc. A Study of the Breakdown Testing of Thermal Silicon Oxides and the Effects of Preoxidation Surface Treatment TDDB, accelerated testing TDDB, constant current test TDDB, constant voltage test TDDB, effect of preoxidation surface treatment TDDB, ramped voltage test 89017 Kerber, M., Schwalke, U., Siemens AG Interface Degradation and Dielectric Breakdown of Thin Oxides Due to Homogeneous Charge Injection TDDB, interface state generation during TDDB, physical mechanism of 89022 Ozawa, Y., Iwase, M., Toriumi, A., Toshiba Corp. Interface State Generation Due to Electron Tunneling into Thin Oxides TDDB, interface trap generation during TDDB, physical mechanism of 89028 Dumin, D.J., Dickerson, K.J., Hall, M.D., Clemson University, Brown, G.A., Texas Instruments Inc. Polarity Dependence of Thin Oxide Wearout TDDB, interface trap generation during TDDB, physical mechanism of TDDB, polarity dependence 89034 Ohno, Y., Ohsaki, A., Kaneoks, T., Mitsuhashi, J., Hirayama, M., Kato, T., Mitsubishi Electric Corp. Effect of Mechanical Stress For Thin SiO2 Films in TDDB and CCST Characterostics TDDB, effect of mechanical stress TDDB, interface state generation during 89039 Coleman, D.J. Jr., Hunter, W.R., Brown, G.A., Chen, I.-C., Texas Instruments Inc. Extensions of the Effective Thickness Theory of Oxide Breakdown TDDB, effective thickness model TDDB, failure distributions TDDB, physical mechanism of 89043 Nikawa, K., Nasu, K., Murase, M., NEC Corp., Kaito, T., Adachi, T., SEIKO Instruments Inc., Inoue, S., TDI Co. Ltd. New Applications of Focused ION Beam Techique to Failure Analysis and Process Monitoring of VLSI Analysis of electromigration failures Analysis of missing metallization Analysis of pinholes in oxides Cross-sectioning of VLSI circuits Failure analysis tools Focused ion beam, (FIB) Micro-sectioning with focused ion beam (FIB) Scanning ion microscopy 89053 Tomioka, H., Tanabe, S., Mizukami, K., Hitachi Ltd. A New Reliability Problem Associated With Ar ION Sputter Cleaning of Interconnect VIAS Contact failure of interconnect vias, mechanism



	Interconnect via contamination during sputter-etch Redeposition of sputtered atoms from intermetal dielectric 89059 Fritz, W.J., Bauer, L.B., Miller, C.S., McDonnell Douglas Electronics Analysis of Aluminum Gallium Arsenide Laser Diodes Failing Due to Nonradiative Regions Behind the Facets Degradation Facet effects Failure analysis Laser diodes Reliability of Al GaAs laser diodes 89065 Christianson, K.A., University of Maine Aging Effects in GaAs Schottky Barrier Diodes Aging of GaAs diodes Barrier metals Electrical stressing GaAs Hot-carriers MESFET Reverse bias stressing 89071 Duvvury, C., Rountree, R.N., Stiegler, H.J., Polgreen, T., Corum, D., Texas Instruments Inc. ESD Phenomena in Graded Junction Devices ESD adverse performance from LDD junction or clad silicide diffusions ESD failure threshold correlates to peak substrate current Thin oxide ESD protection devices 89077 Fong, Y., Hu, C., University of California, Berkeley Internal ESD Transients in Input Protection Circuits Input protection circuit operation study by special test structure/circuit Protection device operation to repetitive non-destructive stress 89082 Ohji, Y., Nishioka, Y., Yokogawa, K., Mukai, K., Hitachi Ltd., Qiu, Q., Arai, E., Tokyo Institute of Technology, Sugano, T., University of Tokyo The Effects of Minute Impurities (H, OH, F) on the SiO2/Si Interface Investigated by Nuclear Resonant Reaction Spin Resonance Thermal SiO2, effect of flourine Thermal SiO2, effect of hydrogen Thermal SiO2, effect of water Thermal SiO2, interface state generation in Thermal SiO2, ultradry oxides 89088 Aur, S., Texas Instruments Inc. Kinetics of Hot Carrier Effects for Circuit Simulation Hot-carrier degradation, n-MOSFET Hot-carrier degradation, n-MOSFET, ac vs. dc Hot-carrier degradation, n-MOSFET, effect on circuit performance Hot-carrier degradation, n-MOSFET, simulation of 89092 Chung, J., Jeng, M.-C., Moon, J.E., Ko, P.K., Hu, C., University of California, Berkeley Low-Voltage Hot-Electron Currents and Degradation in Deep-Submicrometer MOSFETs [OPA] Hot-carrier degradation, channel length dependence Hot-carrier degradation, oxide thickness dependence Hot-carrier degradation, voltage scaling of Hot-electron induced impact ionization, at low voltages Hot-electron injection, at low voltages Hot-electron injection, for Vds less than barrier height 89098 Mittl, S. W., Hargrove, M.J., IBM Hot-Carrier Degradation in P-Channel MOSFETs Hot-carrier degradation, p-MOSFET's Hot-carrier degradation, p-MOSFET's, channel length dependence Hot-carrier degradation, p-MOSFET's, gate material dependence Hot-carrier degradation, p-MOSFET's, oxide thickness dependence 89103 Rakkhit, R., Advanced Micro Devices, Peckerar, M.C., Naval Research Laboratory, Yao, C.T., Hypres Inc. An Investigation of the Time Dependence of Current Degradation In MOS Devices Hot-carrier degradation, n-MOSFET Hot-carrier degradation, n-MOSFET, damage position of



	Hot-carrier degradation, n-MOSFET, MINIMOS simulation of Hot-carrier degradation, n-MOSFET, simulation of 89110 Wang, C.M., Tzou, J.J., Yang, C.Y., Santa Clara University Hot-Carrier-Induced Latchup and Trapping/Detrapping Phenomena Latch-up Latch-up, effect of carrier detrapping Latch-up, effect of carrier trapping Latch-up, induced by hot-carriers 89114 Wang, C.M., Santa Clara University, Danielson, D., Marcyk, G., Babb, E., Kudva, S., Intel Corp. Hast Applications: Acceleration Factors and Result For VLSI Components [OPA] Corrosion testing, CMOS DRAM Corrosion testing, CMOS SRAM Corrosion testing, NMOS EPROM HAST, acceleration factors HAST, chamber contamination effects 89122 Gaeta, I.S., Wu, K.J., Intel Corp. Improved EPROM Moisture Performance Using Spin-On-Glass (SOG) For Passivation Planarization Improved moisture performance through passivation planarization Moisture-induced failure mechanism for EPROMS Passivation planarization, spin-on-glass Role of sidewall oxide defects on EPROM moisture performance 89127 Bossche, A., Delft University of Technology On-Chip Measurement of Package-Related Metal Shift Using an Integrated Silicon Sensor Package-related metallization shift Quantification of package-related metallization shift, integrated sensor Stress-induced displacement of die metallization in plastic molded devices 89131 Lim, T.B., Texas Instruments Singapore Pte Ltd. The Impact of Wafer Back Surface Finish on Chip Strength Chip cracking, effect of surface roughness Si surface flaws, methods of reducing Si surface flaws, stress concentration sites 89137 Matijasevic, G.S., Lee, C.C., University of California, Irvine A Reliability Study of Au-Sn Eutectic Bonding with GaAs Dice Au-Tin (Au-Sn) eutectic bonding with GaAs Dice Bonding GaAs to alumina, Au-Sn eutectic Die bond quality, scanning acoustic microscopical analysis 89141 King, R., Van Schaick, C., Lusk, J., Hewlett Packard Electrical Overstress of Nonencapsulated Aluminum Bond Wires Computer simulation of overstress process of Al bond wires Electrical overstress (EOS) EOS damage to Al bond wires Finite element modeling of overstress process of Al bond wires 89152 Bryant, A., Furukawa, T., Mandelman, J., Mittl, S., Noble, W., Nowak, E., Wade, W., Ogura, S., Wordeman, M., IBM Angled Implant Fully Overlapped LDD (Al-FOLD) NFETs for Performance and Reliability Hot-carriers Ion implantation Leakage current Modeling Novel structure Performance Reliability of LDD NMOS transistors 89158 Nishimura, A., Murata, S., Kuroda, S., Enomoto, O., Kitagawa, H., Hasegawa, S., Texas Instruments Japan Ltd. Long Term Reliability of SiO2/SiN/SiO2 Thin Layer Insulator Formed in 9 um Deep Trench on High Boron Concentrated Silicon DRAM I-V characteristics ONO oxides Reliability of trench capacitors TDDB 89163 Chlipala J.D., AT&T Bell Laboratories, Scarfone, L.M., University of Vermont Reliability Aspects of Laser Programmable Redundancy: Infrared vs. Green, Polysilicon vs. Silicide [OPA] DRAM



	Lasers Polysilicon links Programmable links Redunancy Reliability of laser programming techniques Silicide 89171 Kulkarni, A.K., Rohrer, G.A., McMillan, L.D., Adams, S.E., Michigan Technological University Fatigue Mechanisms in Thin Film Potassium Nitrate Memory Devices Mobile charges Potassium nitrate Read/write cycling 89178 Ong, T.-C., Intel Corp., Seki, K., Hitachi Ltd., Ko, P.K., Hu, C., University of California, Berkeley P-MOSFET Gate Current and Device Degradation Hot-carrier degradation, p-MOSFET's Hot-carrier degradation, p-MOSFET's, AC vs. DC Hot-carrier degradation, p-MOSFET's, lifetime model Hot-carrier degradation, surface channel p-MOSFET's 89183 Sun, S.W., Fu, K.-Y., Swift, C.T., and Yeargain, J.R. Oxide Charge Trapping and HCl Susceptiblity of a Submicron CMOS Dual-Poly (n+/p+) Gate Technology Hot-carrier degradation, effect of boron penetration Hot-carrier degradation, effect of gate material Hot-carrier degradation, n-MOSFET's Hot-carrier degradation, p-MOSFET's Hot-carrier degradation, surface channel vs. buried channel 89189 Hsu, C.C.-H., Wang, L.K., Sun, J. Y.-C., Wordeman, M.R., Ning, T.H., IBM Hot-Carrier Induced Instability of 0.5um CMOS DEVICES Patterned using Synchrotron X-Ray Lithography Post metallization aneal (PMA) Radiation damage caused by x-ray lithography Radiation damage, more impact on pMOSFETs than nMOSFETs 89193 Yost, F.G., Amos, D.E., Romig, A.D. Jr., Sandia National Laboratories Stress-Driven Diffusive Voiding of Aluminum Conductor Lines Design rule stress voiding Diffusion equation solution Lifetimes of Al conductor lines Metallization stress voiding Model stress voiding Stress relaxation of Al lines Stress voiding design rule Stress voiding model Stress voiding stress relaxation Stress voiding void growth Void growth of metallization Voiding of Al conductor lines 89202 Hosoda, T., Yagi, H., Tsuchikawa, H., Fujitsu Ltd. Effects of Copper and Titanium Addition to Aluminum Interconnects on Electro- and Stress-Migration Open Al-0.1 wt.% Cu Al-0.1 wt.% Cu + 0.15 wt.% Ti Al-0.15 wt.% Ti Cu addition to Al interconnects Electromigration as a function of line width Electromigration effect of Ti, Cu Electromigration failures Electromigration lifetimes Electromigration linewidth dependence Stress migration failures Stress voiding failure effect of Ti, Cu TEM measurements Titanium addition to Al interconnects 89207 Hummel, R.E., University of Florida Electromigration of Ionized Cluster Beam Deposited Aluminum Metallizations Activation energy of electromigration Al metallization, DC stress Al metallization, ionized cluster beam deposited, electromigration resistance Al metallization, ionized cluster beam vs vapor deposited Cluster beam deposited Al metallization DC stressing of Al metallization Ionized cluster beam deposition



	89210 Hariu, T., Watanabe, K., Inoue, M., Takada, T., Tsuchikawa, H., Fujitsu Ltd. The Properties of Al-Cu/Ti Films Sputter Deposited at Elevated Temperatures and High DC BIAS Al film lifetimes as a function of deposition temperature Al film lifetimes as a function of substrate bias Al-Cu-Ti failure Al-Cu/Ti films, bias-sputtered step coverage vs substrate temperature Al-Cu/Ti films, electromigration lifetime improvement as grain size increases Electromigration properties of bias sputtered films Sputter deposited Al films Step coverage electromigration problem 89215 Liew, B.K., Cheung, N.W., Hu, C., University of California, Berkeley Electromigration Interconnect Lifetime Under AC and Pulse DC Stress AC lifetime of Al metallization Al interconnect electromigration vacancy relaxation model DC lifetimes of Al metallization Electromigration model correlating DC, pulsed DC, and AC stress Electromigration, AC failures at largest nonsymmetrical flow of vacancy flux Electromigration, grain structure vs geometry Model for electromigration Pulsed DC lifetimes of AL metallization 89220 Maiz, J.A., Intel Corp. Characterization of Electromigration Under Bidirectional (BC) and Pulsed Unidirectional (PDC) Currents Al-1% Si interconnects under bidirectional and pulsed DC stress Bidirectional currents at 2 MHz, J=3.3E6 A/cm2, 200°C Bidirectional currents at low frequency, 1 milliHz (8.33 min semiperiod) Duty cycle effect on electromigration Electromigration as a function of bidirectional and pulsed signals Electromigration bidirectional current model Electromigration of Al-Si interconnects Electromigration, equating non dc signals (>= 1 KHz) to dc current Frequency effect on electromigration Metallization design rule currents , thermal limits Rate of resistance change (RRC) to MTF (median time to failure) Signal asymmetry effect on electromigration 89229 Suehle, J.S., Schafft, H.A., National Institute of Standards & Technology The Electromigration Damage Response Time and Implications for DC and Pulsed Characterizations Al-1%Si metallization (sputtered) test structures with widths 3.7 µm to 4.1 µm & 1.2 µm thick Metallization interconnect reliability overestimation Metallization test line temperature maintained at 277°C Probe contact problem avoidance Pulsed signal lifetime of electromigration t50 measurement interference using highly accelerated stress Vacancy concentration (excess), response time quantified & importance Wafer-level pulsed electromigration probe station 90002 Crook, D.L., Intel Corp. Evolution of VLSI Reliability Engineering Complexity trends in VLSI devices Metal pitch trends in VLSI devices Qualification monitoring of VLSI devices Reliability monitoring of VLSI Devices Scaling effects on electromigration - hot electron and oxide breakdown Screening effectiveness of VLSI devices 90012 Baglee, D.A., Nannemann, L., Huang, C., Intel Corp. Building Reliability Into EPROMs Building Reliability into (EPROM) products Charge loss mechanisms in (EPROM) products,description of DC erase Failures, effect of oxide-nitride oxide (ONO)thickness, cleanliness DC erase program disturb, DC programming, bake stressing in EPROMs Oxide quality, floating gate, control gate, bake stressing in EPROMs Reliability fallout due to process integration, monitoring, manufacturing control 90020 Oates, A.S., AT&T Bell Laboratories Step Spacing Effects on Electromigration Critical step spacings effect on electromigration Dielectric gap between adjacent features, effect on electromigration Electromigration of Al-0.75% Si-0.5% Cu and effect of polycide stack Electromigration, effect of step spacing Preferential failure at steps, caused by grain structure change Preferential failure at steps, caused by metal thinning



	Test structures for electromigration study of step spacing 90025 Hinode, K., Homma, Y., Hitachi Ltd. Improvement of Electromigration Resistance of Layered Aluminum Conductors Al grain growth prevented by small grain, refractory metal Diffusion of refractory elements into the Al layer Electromigration improvement in Al due to stoichiometric TiN underlayer Electromigration incubation time in layered Al conductor Electromigration on fine line AlSi with TiN or W barrier Electromigration resistance of layered Al conductor Refactory metals layering degrades electromigration immunity at Al layer Refactory metals layers suppress Al grain growth & crystal orientation 90031 Martin, C.A., Ondrusek, J.C., McPherson, J.W., Texas Instruments Inc. Electromigration Performance of CVD-W/AL-ALLOY Multilayered Metallization EM degradation mechanism of layered structure of Al-Si and CVD W system EM failure criteria in multilayered metallization system EM performance unchanged on Al/Cu lines on rough texture CVD W film Grain structure dependent prefactor (Ao) impacted by rough textured CVD-W Role of surface roughness in EM study of multilayer metallization system 90037 Crowell, C.R., Shih, C.C., Tyree, V., University of Southern California Simulation and Testing of Temperature Distribution and Resistance Versus Power for Sweat and Related Joule-Heated Metal-on- Insulator Structures Comparison of thermal models for the SWEAT electromigration test structures Temperature distribution along SWEAT electromigration test structures Thermal modeling of wafer level electromigration test structures 90045 Cole, E.I. Jr., Sandia National Laboratories A New Techique For Imaging The Logic State of Passivated Conductors: Biased Resistive Contrast Imaging Biased resistive contrast imaging CMOS failure analysis technique Failure analysis of passivated CMOS devices Logic state imaging of passivated conductors Nondestructive testing of CMOS devices using biased resistive contrast imaging Radiation damage to MOS transistors caused by a SEM electron beam Voltage contrast, disadvantages of using 90051 Vollkommer, F., Bohn, H.G., Robrock, K.-H., Schilling, W., Institut fur Festkorperschung Internal Friction: A Fast Technique For Electromigration Failure Analysis Al metalization, quality control method Electromigration failure analysis Electromigration failure analysis using internal friction techniques Electromigration lifetime, an alternative to conventional tests Internal friction failure analysis Internal friction in thin films Nondestructive testing of Al metalization 90055 Hannaman, D.J., Zamani, N., Dhiman, J., Buehler, M.G., California Institute of Technology Error Analysis for Optimal Design of Accelerated Tests Accelerated test stress selection Accelerated testing-error analysis for optimal design Electromigration analysis design of experiment for Electromigration test stress optimization Multiple linear regression to obtain optimal stress points Optimized stress points given limited test time Test time optimization 90061 Banerjee, I., Tracy, B., Davies, P., McDonald, B., Intel Corp. Use of Advanced Analytical Techniques for VLSI Failure Analysis Crystalline defects, using a TEM for identification of submicron size Failure analysis using focused ion beam Failure analysis using scanning electron microscopy Failure analysis using secondary ion mass spectroscopy Failure analysis using transmission electron microscopy Failure mechanism identification and elimination Metal voids, subsurface imaging using a SEM to detect Package contamination investigation using SIMS Resist defect failure analysis using FIB Thin film structures, using SIMS for characterization of thermal stability of VLSI failure analysis using advanced analytical techniques 90069 Kimball, M., Tektronix, Inc. An Improved Probe Sharpening Techique



	Electromigration etching of tungsten probes Microprobe sharpening technique Probe etching Probe sharpening technique Probe TIP Radius, the control of Scanning tunneling microscope, probe TIPS for 90072 Shirley, C.G., Maston, S.C., Intel Corp. Electrical Measurements of Moisture Penetration Through Passivation HAST testing for moisture penetration of passivation HAST, Highly accelerated temperature/humidity stress testing Metal comb/serpentine structure Moisture diffusion coefficients of plasma oxides and nitrides Moisture ingress through various compositions and thicknesses Moisture penetration measurement through passivation Moisture penetration mechanisms of passivation materials Moisture penetration through passivations covering topography Oxynitride films failure mechanism Passivation, electrical measurements of moisture penetration through 90081 Boit, C., Kolzer, J., Benzinger, H., Dallmann,A., Siemens AG, Herzog, M., Technical University Munich, Quincke, J., Siemens AG Discrimination of Paraxitic Bipolar Operating Modes in ICs With Emission Microscopy Bipolar device operating mode characterization Emission microscopy for bipolar device operation Emission microscopy, spectral sensitivity a factor in failure analysis Hot-carrier and latch up distinguished by optical bandpass filters Latch-up identification as a diffusion controlled phenomenon NMOS transistor test structure Parasitic bipolar NMOS transistor Parasitic bipolar operating modes, determination using emission microscopy 90087 Wurfl, J., Institut fur Hochfrequenztechnik, Singh, J.K., Central Electronic Engineering, Hartnagel, H.L., Institut fur Reliability Aspects of Thermally Stable LaB6-Au Schottky Contacts to GaAs Annealing, influence on barrier stability Auger analysis of GaAs-LaB6 interface stability Contact annealing effects on GaAs refractory gate Metallizations GaAs-LaB6 Schottky barrier stability Lanthanum X-Ray photoelectron depth profiling on GaAs Schottky gates Oxygen content, influence on barrier stability Oxygen effects on refractory gate metals for GaAs MESFETs Refractory gate materials for reliable GaAs MESFETs Schottky gate degradation, improvements with lanthanum hexaboride Spectroscopy, lanthanum hexaboride-Au Schottky GaAs contacts, thermal stability 90094 Taniguchi, M., Amano, Y., Nemoto, T., Shinohara, K., Nippon Mining Co. Ltd. Enhanced Reliability of Hemt by Using a Tin Barrier GaAs HEMT ohmic contacts degradation GaAs ohmic contacts, HEMT improvements with titanium-nitride barrier Ohmic contact degradation in GaAs HEMTS and MESFETS Outdiffusion of Ga and As in contact Reliability comparison of GaAs HEMT and MESFETs Spectroscopy, Auger electron, used GaAs HEMT ohmic contacts investigation TiN barrier in ohmic contact to prevent outdiffusion 90100 Baglee, D.A., Intel Corp., Towner, J.M., Xicor, Inc. "Are Electromigration Failures Lognormally Distributed?" Log normal distribution of lifetime Logarithmic extreme value distribution of lifetime Relationship between grain size and the type of distribution Statistical distribution of electromigration failures 90106 Suehle, J.S., Schafft, H.A., National Institute of Standards & Technology Current Density Dependence of Electromigration t50 Enchancement Due To Pulsed Operation Current density dependence of t50 enhancement Decrease of t50 enhancement over a range of frequency Observation of t50(pulsed)/t50(dc) Pulsed electromigration test 90111 Liew, B.K., Fang, P., Cheung, N.W., Hu, C., University of California, Berkeley Reliability Simulator For Interconnect and Intermetallic Contact Electromigration Contact electromigration -Al on tungsten Contact electromigration model for intermetallic contacts Electromigration impacted by microstructure inhomogeneity Incorporated into Berkeley reliability tool package (BERT)



	Vacancy divergence, flux divergence due to material discontinuity 90119 Baerg, W., Wu, K., Davies, P., Dao, G., Fraser, D., Intel Corp. The Electrical Resistance Ratio (RR) As a Thin Film Metal Monitor [BPA] Correlation between electrical resistance ratio and electromigration lifetime MTTF Correlation of RR to median-grain-radius for sputtered thin films Effectiveness of electrical resistance ratio to monitor metal films contamination Electrical resistance ratio (RR) Electrical resistance ratio as a thin film metal monitor Electrical resistance ratio used Van der Pauw method Measurement of resistance ratio to monitor metal films 90125 Walters, M., MCNC, Reisman, A., North Carolina State University Distribution Phenomena of Charged Defects and Neutral Electron Traps in Process-Induced Radiation-Damaged IGFETS With Gate Insulators Grown at 1000C and 800C Charge defects Gate oxide damage Oxidation temperature Radiation-induced Traps 90132 Mori, S., Kaneko, Y., Arai, N., Ohshima, Y., Araki, H., Narita, K., Sakagami, E., Yoshikawa, K., Toshiba Corp. Reliability Study of Thin Inter-poly Dielectrics for Non-Volatile Memory Application Defects Inter-poly dielectrics Leakage Nonvolatile ONO Thickness limit 90145 Wu, K., Pan, C.-S., Shaw, J.J., Freiberger, P., Sery, G., Intel Corp. A Model for EPROM Intrinsic Charge Loss Through Oxide-Nitride-Oxide (ONO) Interpoly Dielectric Charge loss EPROM High temperature Mechanisms ONO leakage 90150 Rakkhit, R., Haddad, S., Chang, C., Yue, J., Advanced Micro Devices Drain-Avalanche Induced Hole Injection and Generation of Interface Traps in Thin Oxide MOS Devices Early window closure EEPROM Hole injection Interface traps MOSFET 90154 Miller, T., Illyes, S., Baglee, D.A., Intel Corp. Charge Loss Associated with Program Disturb Stresses In EPROMs Bitline stress Charge loss Defect-induced EPROM Program disturb 90159 Fishbein, B.J., Jackson, D.B., Digital Equipment Corp. Performance Degradation of N-Channel MOS Transistors During DC and Pulsed Fowler-Nordheim Stress Electron trapping Fowler-Nordheim stress, dc & pulsed MOSFET 90164 Burnett, D., Hu, C., University of California, Berkeley Hot-Carrier Reliability of Bipolar Transistors Bipolar Forward bias Hot-carrier degradation Non-load field Simulation 90170 Kumagai, J., Toita, K., Kaki, S., Sawada, S., Toshiba Corp. Reduction of Signal Voltage of Dram Cell Induced by Discharge of Trapped Charges in NANO-METER Thick Dual Dielectric Film Charge trapping/detrapping Degraded data retention DRAM dielectric



	Thin ONO 90178 van der Pol, J.A., Koomen, J.J., Philips Research Laboratories Relation Between the Hot Carrier Lifetime of Transistors and CMOS SRAM Products Access transistor Hot-carrier degradation Product lifetime SRAM 90186 Chiang, S., Wang, R., Chen, J., Hayes, K., McCollum, J., Hamdy, E., Actel Corp., Hu, C., University of California, Berkeley Oxide-Nitride-Oxide Antifuse Reliability Endurance FPGAs ONO antifuse Stability TDDB 90194 Kaneko, H., Hasunuma, M., Sawabe, A., Kawanoue, T., Kohanawa, Y., Komatsu, S., Miyauchi, M., Toshiba Corp. A Newly Developed Model For Stress Induced Slit-Like Voiding Metallization surface and interface free energy Orientation control (grain boundary) of metal films, need for Slit-like void mechanism 90200 Fieler, P.E., Motorola, Smith, W.L., Welles, C., Bivas, A., Therma-Wave, Inc., Yost, F.G., Campbell, J.E., Sandia National Direct Measurement of Stress-Induced Void Growth by Thermal Wave Modulated Optical Reflectance Imaging Detection and measurement of subsurface voids in passivated metallization Thermal wave modulated optical reflectance imaging for process development applications 90209 Tanikawa, A., Okabayashi, H., NEC Corp., Mori, H., Fujita, H., Osaka University Yamada-oka Observation of Stress-Induced Voiding With an Ultra-High Voltage Electron Microscope Lattice diffusion and grain boundary diffusion around 400°C Ultra-High Voltage Electron Microscopy (UHVEM) 90216 Hirashita, N., Aikawa, I., Ajioka, T., Kobayakawa, M., Yokoyama, F., Sakaya, Y., Oki Electric Industry Co., Ltd. Effects of Residual Water in Spin-on-Glass Layer on Void Formation For Multilevel Interconnections Metallization annealing temperature and SOG relationship to voids Water-outgassing generated gaseous pressure under metallization 90221 Tezaki, A., Mineta, T., Egawa, H., Noguchi, T., Toshiba Corp. Measurement of Three Dimensional Stress and Modeling of Stress Induced Migration Failure in Aluminum Metal stress and open failures under passivation X-ray diffractometry to measure residual stress in aluminum 90231 Moazzami, R., Hu, C., University of California, Berkeley, Shepherd, W.H., National Semiconductor Electrical Conduction and Breakdown in SOL-GEL Derived PZT Thin Films DRAM DRAM Ferroelectric Gate oxide Lifetime prediction Nonvolatile memory Polarization PZT (PbZrxTi(1-x)03 PZT Films SOL-GEL deposition TDDB TDDB Voltage stressing 90237 Fisch, D.E., Abt, N.E., Bens, F.N., Miller, W.D., Pramanik, T., Saiki, W., Shepherd, W.H., National Semiconductor Analysis of Thin Film Ferroelectric Aging Aging Ferroelectric memories FRAM reliability Margin testing Modeling Nonvolatile memories Polarization level Reliability Signal loss 90244 Gallo, A.A., Dexter Corp. Effect of Mold Compound Components on Moisture-Induced Degradation of Gold-Aluminum Bonds in Epoxy



	Encapsulated Devices Antimony trioxide caused wire bond failures Au/Al ball bond failures Au/Al ball bond intermetallic degradation Autoclave testing of Plastic ICs Ball bond strength degradation Epoxy molding compound flame retardant study Fire retardant caused failures Flame retardant caused ball bond failures Moisture antimony trioxide caused ball bond failures Moisture resistance of plastic IC DIPS Moisture-flame retardant interactions Moisture-induced wire bond failures Plastic IC wire bond failures 90252 Dunn, C.F., McPherson, J.W., Texas Instruments Inc. Temperature-Cycling Acceleration Factors For Aluminum Metallization Failure in VLSI Applications Al metallization fatique temperature cycle acceleration factors Al metallization fatique temperature cycle reliability model AuAl wire bond fatique temperature cycle acceleration factors AuAl wire bond fatique temperature cycle reliability model Passivation cracking and Al metal line shifts due to temperature cycling Passivation cracking and Al metal shifting temperature cycle acceleration factors Wire bond pad chipout temperature cycle acceleration factors Wire bond pad chipout temperature cycle reliability model 90259 Aritome, S., Kirisawa, R., Endoh, T., Nakayama, R., Shirota, R., Sakui, K., Ohuchi, K., Masuoka, F., Toshiba Corp. Extended Data Retention Characteristics After More Than 10 Write and Erase Cycles In EEPROMs Charge trapping Crystalline defects Data retention in EEPROMS DRAM EEPROM Erase endurance FETMOS cell Flash EEPROM Fowler-Nordheim Tunneling Interface traps Leakage junction Lifetime prediction Nonvolatile memory Oxide sidewall TDDB TEM Thermal aging Write endurance Write/erase endurance 90265 Onishi, S., Ayukawa, A., Tanaka, K., Sakiyama, K., Sharp Corp. Tem Analysis of Failed Bits and Improvement of Data Retention Properties in Megabit-Drams Charge loss in DRAMS Dislocation loops DRAM Focused Ion beams Gate current Junction leakage LDD Lifetime prediction PMOS degradation Transconductance 90270 Reimbold, G., Saint-Bonnet, P., Gautier, J., D.LETI CENG Correlation of Total Gate Current Fluence With PMOS Degradation Charge trapping CMOS Hot-carrier degradation of PMOS transistors PMOS 90276 Akimori, H., Owada, N., Taneoka, T., Uda, H., Hitachi Ltd. Reliability Study on Polycrystalline Silicon Thin Film Resistors Used in LSIs Under Thermal and Electrical Stress Changes in polysilicon resistivity Charge trapping Electrical aging Electrical stress



	Lifetime prediction Metal contacts Modeling Polysilicon resistor Pt Reliability Resistance drift TEM Thermal aging Thermal stress Ti 90281 Lin, D.L., AT&T Bell Laboratories Thermal Breakdown of VLSI by ESD Pulses ESD protection design guidelines ESD tester analysis Human body model analysis Input protection analysis Risetime dependence of ESD failures Thermal breakdown of PN junctions Three-dimensional thermal model 90288 Haddad, H., Hewlett-Packard, Forbes, L., Oregon State University, Burke, P., Richling, W., Hewlett-Packard Carbon Doping Effects on Hot Electron Trapping Carbon doping Charge trapping DLTS Hot-electrons in MOS transistors Hydrogen effects Interface traps NMOS Photocapacitance Vt shift 90290 Yiqi, Z., Qing, S., Xidian University hFE Instability and 1/f Noise in Bipolar Transistors Bipolar Electric aging Electric stressing Fast states Forward biased beta degradation Gain degradation hFE drift hFE instability Interface traps Mobile ions n-p-n temp. storage Noise, 1/f Reliability of bipolar transistors Thermal aging 91001 Schafft, H.A., National Institute of Standards & Technology, Baglee, D.A., Intel Corp., Kennedy, P.E., Managememt Sciences Inc. Building-In Reliability: Making It Work BIR task force & networks promoting implementation BIR, core elements BIR, input parameters categories: intrinsic, extrinsic, & other BIR, obstacles to BIR, proactive vs. traditional approach Integrated Reliability: all phases of manufacture with reliability-driven rules JEDEC Task Group on Wafer Level Reliability (JC14.2) Qualified Manufacturers Listing (QML) 91008 Hiraka, S., Itabashi, M., Sony Corp. The Influence of Selenium Deposited on Silver Plating on Adhesive Strength of Die-Attachment Se Ag plating impurity caused die attach failure Se Ag plating impurity caused epoxy adhesive strength reduction Se Ag plating impurity caused epoxy resin bleedout Se Ag plating impurity caused epoxy shear strength reduction Se rich leadframe plating caused die attach failure Se rich leadframe plating caused epoxy resin bleedout Se rich leadframe plating caused sheer strength reduction Se rich plating surface caused die attach failure



	Se rich plating surface caused epoxy adhesive strength reduction S