Best Paper
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2024 IRPS Best Paper
Best Paper
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Best Student Papers
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Best Poster Presentation
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2023 IRPS Best Paper
Best Paper
Towards a Universal Model of Dielectric Breakdown
Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander Shluger, Valerio Milo and Luca Larcher
Best Student Papers
Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters
Y. Ding, O. Varela Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, H. Farr, I. De Wolf and K. Croes
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin and Tibor Grasser
Best Poster Presentation
Polarity Dependency of MOL-TDDB in FinFET
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myung Soo Yeo, Shinyoung Chung and Jon Haefner
2022 IRPS Best Paper
Best paper
E. Bury, A. Chasin, B. Kaczer, M. Vandemaele, S. Tyaginov, J. Franco, R. Ritzenthaler, H. Mertens, P. Weckx, N. Horiguchi, D. Linten
Best Student paper
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
Best Poster Presentation
Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance
L. Pirro, P. Liebscher, C. Brantz, M. Kessler, H. Herzog, O. Zimmerhackl, R. Jain, E. Ebrand, K. Gebauer, M. Otto, A. Zaka, J. Hoentschel
Archives
2021 IRPS Best Paper
Best Paper: Correlation between 4H-SiC epitaxial defects and MOSFETs breakdown
Best Student Paper: Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)
Best Poster: BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations
Best People’s Choice: Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area
Best People’s Choice: TDDB Reliability in Gate-All-Around Nanosheet
2020 IRPS Best Paper
Best Student Paper: On the impact of mechanical stress on gate oxide trapping
Best Visual Paper: Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs