
Best Paper
2025 IRPS Best Paper
Best Paper
Seungmin Lee, Taegon Lee, Gaeun Kim, Kwang-Ryul Lee, Eunji An, Sekwon Hong, Sungjun Kim, Soonkwan Kang, Seokwoo Hong, Hwan Cha, Minkyu Kang, Jaesun Yun, Moongeun Kim, Woongseop Lee, Joonsung Lim, Joonyoung Oh, Kyungyoon Noh, Seungwan Hong, and Sung-Hoi Hur
Best Student Paper
Prasanna Venkatesan, Andrea Padovani, Lance Fernandes, Priyankka Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, and Asif Khan
Best Poster Presentation
Dishant Sangani, Dieter Claes, Pieter Weckx, Ben Kaczer, and Georges Gielen
People’s Choice Paper
Ernest Y. Wu, Richard G. Southwick, and Baozhen Li
People’s Choice Poster Presentation
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-parameters of Advanced n-MOSFETs
Lisa Tondelli, Andries J. Scholten, J. van Beurden, R. M. T. Pijper, Ruben Asanovski, T. V. Dinh, and Luca Selmi
2024 IRPS Best Paper
Best Paper
A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry Modulation
Rakesh Ranjan, Pavitra R. Perepa, Ki-Don Lee, Ashish K. Jha, Kartika C. Sahoo, Kayla N. Sanders, Robert Moeller, Prateek Sharma, Minhyo Kang and Peter Kim
Best Student Paper
Yong Hyeon Yi, Chris Kim, Armen Kteyan, Alexander Volkov, Stephane Moreau and Valeriy Sukharev
Best Poster Presentation
Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS
Wei-Chun Wang, Shida Zhang, Sudarshan Sharma, Minah Lee and Saibal Mukhopadhyay
People’s Choice Paper
J. Laguerre, S. Martin, J. Coignus, C. Carabasse, M. Bocquet, F. Andrieu and L. Grenouillet
People’s Choice Poster Presentation
Rina Takashima, Takeo Koike, Shogo Itai, Hideyuki Sugiyama, Young Min Lee, Masaru Toko, Soichiro Ono, Daisuke Watanabe, Soichi Oikawa, Katsuhiko Koi, Hiroyuki Kanaya, Kohji Nakamura and Masahiko Nakayama
2023 IRPS Best Paper
Best Paper
Towards a Universal Model of Dielectric Breakdown
Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander Shluger, Valerio Milo and Luca Larcher
Best Student Papers
Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters
Y. Ding, O. Varela Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, H. Farr, I. De Wolf and K. Croes
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin and Tibor Grasser
Best Poster Presentation
Polarity Dependency of MOL-TDDB in FinFET
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myung Soo Yeo, Shinyoung Chung and Jon Haefner
2022 IRPS Best Paper
Best paper
E. Bury, A. Chasin, B. Kaczer, M. Vandemaele, S. Tyaginov, J. Franco, R. Ritzenthaler, H. Mertens, P. Weckx, N. Horiguchi, D. Linten
Best Student paper
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
Best Poster Presentation
Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance
L. Pirro, P. Liebscher, C. Brantz, M. Kessler, H. Herzog, O. Zimmerhackl, R. Jain, E. Ebrand, K. Gebauer, M. Otto, A. Zaka, J. Hoentschel
Archives
2021 IRPS Best Paper
Best Paper: Correlation between 4H-SiC epitaxial defects and MOSFETs breakdown
Best Student Paper: Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)
Best Poster: BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations
Best People’s Choice: Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area
Best People’s Choice: TDDB Reliability in Gate-All-Around Nanosheet
2020 IRPS Best Paper
Best Student Paper: On the impact of mechanical stress on gate oxide trapping
Best Visual Paper: Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs