Highlighted Papers
Inside Program: Conference Program l Keynote Speakers l Tutorials
Workshops l Year in Review l Highlighted Paper l Invited Speakers
(RER) Radiation Effect Reliability
(SER) System Electronics Reliability
(TX)Transistors
(SiC)SiC Devices
(2C.1 - GaN) 10.40 am, March 24
Revealing Bulk Trap Distributions in GaN MESFETs through Re-defined AC-Gₘ Characterization Method under Irradiation and Stress
Redefined AC transconductance (AC-Gₘ) technique for GaN MESFETs, enabling direct extraction of bulk trap energy, spatial location, and density
The method is applied to devices under heavy-ion irradiation and off-state stress, yielding comprehensive 3D trap maps
(2C.2 - GaN) 11.05 am, March 24
Methodology for Extrapolating the Lifetime of GaN HEMTs with p-GaN Gate
Constant voltage stress data used to extrapolate the lifetime for GaN HEMTs with p-type gate.
The model was compared with other results present in literature, confirming that: 1) the conventional E-model is not able to model the gate lifetime; 2) impact ionization (i.i.) has a role in failure mechanism, 3) Failure is ultimately driven by the presence of hot carriers in the p-GaN layer
(3B.1 – EL) 1:30 PM, March 24
Differential Resistance Lowering Effect in High-Speed Ge Photodetectors During Nanosecond ESD Events
Discussion of ESD protection challenges in photonic technologies
Analysis includes measurements and a detailed TCAD analysis.
(3C.1 - RT) 1:30 pm, March 24
Fast, Optics-Free Extraction of Interface Trap and Subgap DOS in Amorphous Oxide TFTs Using Single Pulse Charge Pumping
This paper is a comprehensive study, including a rapid but valuable SPCP testing technique, testing data, bandgap analysis, calculation, and physical model.
(4A - PK) 4:00 pm, March 24
Quality & Reliability Characterization of EMIB-T (TSV) Advanced Packaging Technology
The authors performed several Thermo-mechanical reliability tests, and the results are quite satisfactory. Demonstrates JEDEC level reliability and identifies important solder joint improvement paths
(4C.1 - PI) 3:35 pm, March 24
Reaching the BTI 10yrs Lifetime for 2.5V BEOL Compatible (<420°C) High Voltage Si-CMOS
This paper presents a 2.5V BEOL-compatible Si-CMOS transistor using poly Si gate with UV nanosecond laser annealing that achieves a 10-year BTI lifetime at 420°C, outperforming TiN gates in reliability through effective defect passivation.
(8B.1 - RER) 4:00pm, March 25
Radiation Induced Instability Mechanism and Hardening Method of Nanoscale Devices
The mechanism of gamma-ray irradiation on the electrical variations of molybdenum disulfide (MoS2) field-effect transistors with a buried local-back gate structure
The radiation hardness of high-energy protons (upto 100 MeV) in 3.5nm thickness of ZnO TFTs
Radiation hardness of the nanoscale device increased by the interface engineering, such as dielectric passivation, vacuum transfer of nano-materials, and proper annealing.
(8B.2 - RER) 3:35pm, March 25
Input-Data Dependence and Technology Trend of Soft Error Rate in Flip-Flop
SER trends across six Samsung automotive technologies (130, 28, 14, 8, 5, and 4 nm)
SET induced SER in local clock buffers (LCB) by alpha-, high-energy neutron, and thermal neutron irradiation tests
The SER in FFs decreases with technological advancements from 14 nm to 5 nm in bulk-FinFET technologies, driven by stable Qcrit levels, but increases from 5 nm to 4 nm due to a lower Qcrit in 4 nm FFs.
Identifies the mechanism limiting write endurance under the high-field regime of FeFET.
Experimental characterization to establish that anode hole injection (AHI) during program is the dominant cause of cycling induced breakdown.
(8C.1 - EM) 3:10pm, March 25
Mechanism study of dielectric breakdown in FeFET with gate side charge injection
(9C.1 - CR) 9:10am, March 26
Experimental- and Simulation-Based Analysis of SRAM Data Retention Voltage Degradation Under Consideration of Time-Dependent-Variability
Measured yield of commercial SRAM macros under time-dependent variability (BTI after different stress times)
Simulation framework, calibrated to measurements, to estimate SRAM macro yield under time-dependent variability
(10A.3 - SER) 11:40am, March 26
In-Place Backup: A Lightweight Strategy for On-Demand Reliability Enhancement in Multi-Bit-Per-Cell Solid-State Drives
Evaluates multiple schemes for redundant data encoding only where needed
Reduces read-disturb and retention errors
Imposes small performance overhead
(10C.4 - GD) 12:05 pm, March 26
Analysis of the Width- and Area- Dependence Discrepancy in the GAA Structure TDDB using Numerical Simulation
This study finds that time-dependent dielectric breakdown (TDDB) of gate-all-around (GAA) devices is dominated by the corner regions due to electric-field crowding. This has direct implications for reliability-aware pathfinding involving the number and width of nanosheets (NS).
Clear demonstration of consistency between package-level and wafer-level EM stress with strong data support
Important implication on process development/qualification.
(11A.1 - MB) 1:45 pm, March 26
Exploring Cu Interface Reliability via Constant-Voltage WLR EM
(11B.1- RF) 1:45pm, March 26
RF Aging Extensive Characterization & Modeling For Reliability-Aware Power Amplifier Design
Novel methodology to estimate transistor HCI degradation under RF mismatch, using extensive RF stresses at different bias and load impedance conditions.
(11C.1 - MR) 1:45 pm, March 26
Poly-Si Channel-Induced Time Instability of 3D NAND Flash Cell Threshold-Voltage: A Comprehensive Temperature Analysis
The threshold-voltage instability in 3D NAND is studied due to temperature-dependent grain-boundary charge trapping.
(11C.3 - MR) 2:35 pm, March 26
Clarification of Defect Generation and Annihilation Dynamics in MONOS Cells for Realization of Sustainable 3D Flash Memory with Cryogenic Operation and Recovery Annealing
Cryogenic operation suppresses hydrogen-related defect generation in 3D MONOS flash cells, and effective recovery annealing requires defects to remain neutral thus improving lifetime.
