Invited Speakers


Invited Speakers

Topic Speaker Title
GaN Devices Tetsuo Narita (Toyotas) Design Principles of Metal-Oxide-Semiconductor Structures for Vertical GaN Power Devices
Memory Reliability Tomoya Sanuki (Kioxia) Reliability of 3D Flash Memory Under Cryogenic Operation for Bit Cost Scaling and Long-term Usage
Packaging and 2.5/3D Assembly Tz-Cheng Chiu (National Cheng Kung University) Effect of inelasticity on the cracking of materials and interfaces in heterogeneous integration
Packaging and 2.5/3D Assembly Stefaan Van Huylenbroeck (imec) Wafer to Wafer hybrid bonding pitch scaling challenges
Radiation Effect Reliability Chang Goo Kang (Korea Atomic Energy Research Institute) Correlation Between Interface Engineering and Radiation Hardness of Nanoscale Devices
SiC Devices Filippo Giannazzo (CNR-IMM) Two-dimensional Materials and Wide Bandgap Semiconductors: integration challenges and novel device applications