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2022 IRPS Best Paper

Best paper

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

E. Bury, A. Chasin, B. Kaczer, M. Vandemaele, S. Tyaginov, J. Franco, R. Ritzenthaler, H. Mertens, P. Weckx, N. Horiguchi, D. Linten

Best Student paper

The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena

Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi

Best Poster Presentation

Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance

L. Pirro, P. Liebscher, C. Brantz, M. Kessler, H. Herzog, O. Zimmerhackl, R. Jain, E. Ebrand, K. Gebauer, M. Otto, A. Zaka, J. Hoentschel

Archives

2021 IRPS Best Paper

• Best Paper: Correlation between 4H-SiC epitaxial defects and MOSFETs breakdown

• Best Student Paper: Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)

• Best Poster: BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations

• Best People’s Choice: Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area

• Best People’s Choice: TDDB Reliability in Gate-All-Around Nanosheet

2020 IRPS Best Paper

• Best Paper: In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation

• Best Student Paper: On the impact of mechanical stress on gate oxide trapping

• Best Poster: A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory

• Best Visual Paper: Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs