
Call for Papers
Inside Call for Papers: Call for Papers/Topics of Interest l Abstract Submission l Late News Papers
Abstract Submission is now closed.
Topics of Interest
IRPS 2023 focus topics:
1. Embedded / In-product memory / neuromorphic compute: Reliability of emerging memory devices and design architectures with embedded memory as function/performance booster
2. GAA, nanosheet, RibbonFET, Forksheets: TDDB, BTI, HCI, process charging, HV effects
3. 3D IC advanced packaging: 3D, 2.5D, interposer MIM, embedded bridge, hybrid bonding reliability
Contributed papers are solicited in the following subject areas:
Circuits, Products, and Systems
Circuit Reliability and Aging – Includes digital, mixed-signal, power and RF applications; design for reliability; variability-aware design, EDA tools and compact modeling
Product Reliability – Includes automotive, industrial, commercial, military grade IC/product qualification, HTOL/production burn-in; early failure rate; defect detection; failure analysis; root cause and corrective action, product reliability modeling and risk analysis; on-chip sensors; silicon photonics; multichip/chiplet product, 2D/3D chiplet product, stacked and HBM memory; DFT/DFR solutions for improved reliability; chipset reliability considerations including electrical, environmental, thermal and mechanical risks.
System Electronics Reliability – Includes reliability of electronic systems used in a variety of applications including but not limited to consumer electronics, data centers, health care, space and automotive industry; architecture, design and modeling methods used to manage system reliability including “row hammer” scenarios; telemetry data collection and analysis techniques including machine learning and deep learning methods for large-scale data analysis and system qualification.
Soft Errors – Includes impact of neutrons, alpha particles, protons and heavy ions on electronics, photonic devices and systems; Device, circuit, system and application level simulation and mitigation techniques for single-bit/multi-bit single event effects in memories and logic.
ESD and Latchup – Includes component and system-level ESD design; modeling and simulation
Packaging and 2.5D/3D Assembly – Includes chip-package interaction; fatigue; power dissipation issues; reliability of 2.5D and 3D IC packaging and TSV integration, interconnects, multichip modules, passive interposers
Reliability Testing – Includes reliability equipment, tools, test structures, and test methods; design for reliability testing
RF/mmW/5G – Reliability of CMOS, BiCMOS, SiGe, SOI, IIIV and other devices in high frequency applications
Materials, Processing, and Devices
Transistors – Includes hot carrier phenomena; BTI; RTN; advanced node scaling; variability; Ge and III-V channels; nano-wire, gate all-around, nano-ribbon, fork-sheet devices
Gate/MOL/BEOL Dielectrics – Includes reliability of novel gate dielectrics and ferroelectrics; 2D layered dielectrics and van der Waals dielectrics for 2D materials based devices; modeling of dielectric breakdown; gate dielectric reliability for III-V, Ge, and advanced FETs; middle-of-the-line reliability; MIM/MOM capacitors
Beyond CMOS Devices – Includes reliability of tunnel FETs, transistors with 2D semiconductors (graphene, MoS2 ); ferroelectric and negative capacitance FETs; spintronics
Neuromorphic Computing Reliability – Reliability of devices logic and memory (MRAM, RRAM, etc.) and design architectures used in neuromorphic computing and AI acceleration
Gallium Nitride and Silicon Carbide Wide-Bandgap Semiconductors – threshold voltage instabilities, charge trapping, switching stress, breakdown and other reliability topics including thermal issues within power devices.
Compound and Optoelectronic Devices – Includes reliability of III-V-based devices; optoelectronic devices; far infrared detectors
Metallization/BEOL Reliability – Includes stress migration; electromigration; low-k dielectric breakdown; Joule heating
Process Integration – Includes new process-related reliability issues; foundry reliability challenges
Failure Analysis – Includes evidence of new failure mechanisms; advances in failure analysis techniques
Memory Reliability – Includes stand-alone DRAM and 3DNAND
Emerging Memory – Novel memory devices based on magnetics (e.g. STT, SOT, VCMA), or resistive (selector or memory element) RAM, ferroelectrics, or phase change memory
MEMS – Includes reliability of sensors and actuators; reliability testing; analysis & modeling; BioMEMS