2021 IRPS Highlighted Papers

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View the Full 2021 Program for Abstracts.

1. 2B.5 - Study on the Difference between ID(VG) and C(VG) pBTI Shifts in GaN-on-Si E-Mode MOSc-HEMT

   A.G. Viey, W. Vandendaele, M.-A. Jaud, J. Coignus, J. Cluzel, A. Krakovinsky, S. Martin, J. Biscarrat, R. Gwoziecki, V. Sousa, F. Gaillard, University Grenoble-Alpes, R. Modica, F. Iucolano, Research and Development Department STMicroelectronics, M. Meneghini, G. Meneghesso, University of Padova Via Gradenigo 6/B, G. Ghibaudo, IMEP-LAHC MINATEC University Grenoble-Alpes

2. 5D.3 - Elucidating 1S1R Operation to Reduce the Read Voltage Margin Variability by Stack and Programming Conditions Optimization

   J. Minguet Lopez, L. Hudeley, L. Grenouillet, D. Alfaro Robayo, J. Sandrini, G. Navarro, M. Bernard, C. Carabasse, D. Deleruyelle, N. Castellani, M. Bocquet, J. M. Portal, E. Nowak, G. Molas, 1CEA, Aix Marseille Univ, INL CNRS

3. 2A.2 - Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks

   T.-E. Lee, K. Toprasertpong, M. Takenaka, S. Takagi, The University of Tokyo

4. 3A.3 - TDDB Reliability in Gate-All-Around Nanosheet

   Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Wu, Richard Southwick, Jingyun Zhang, Veeraraghavan Basker, Dechao Guo, IBM Research Division

5. 5A.3 - Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction

   Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee, Technology Quality and Reliability Group

6. 3F.2 - Reliability of a DME Ru Semidamascene Scheme with 16 nm wide Airgaps

   A. Leśniewska, O. Varela Pedreira, M. Lofrano, G. Murdoch, M. van der Veen, A. Dangol, N. Horiguchi, Zs. Tőkei, K. Croes, imec

7. 2C.3 - Characterization and Mitigation of Relaxation Effects on Multi-level RRAM Based in-Memory Computing

   Wangxin He, Wonbo Shim, Shihui Yin, Xiaoyu Sun, Deliang Fan, Shimeng Yu, Jae-sun Seo, Arizona State University, Georgia Institute of Technology

8. 4D.3 - Reliability of Wafer-Level Ultra-Thinning Down to 3 μm using 20 nm-Node DRAMs

   Zhwen Chen, Youngsuk Kim, Tadashi Fukuda, Koji Sakui, Takayuki Ohba, Tokyo Institute of Technology, DISCO Corporation, Omori-Kita 2-chome, Tatsuji Kobayashi, Takashi Obara, Micron Memory Japan

9. 4A.2 - Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

   G. Rzepa*, M. Karner*, O. Baumgartner*, G. Strof*, F. Schanovsky*, F. Mitterbauer*, C. Kernstock*, H.W. Karner*, P. Weckx•, G. Hellings•, D. Claes•, Ζ. Wu•◊, Y. Xiang•◊, T. Chiarella•◊, B. Parvais•º, J. Mitard•, J. Franco•, B. Kaczer•, D. Linten•, Ζ. Stanojevic*, *Global TCAD Solutions, •imec, ◊ KU Leuven, ° Vrije Universiteit Brussels

10. 3G.3 - Compact Model of ESD Diode Suitable for Sub-Nanosecond Switching Transients, Shudong Huang, Elyse Rosenbaum, University of Illinois at Urbana-Champaign

11. 2D.2 - Robust Brain-Inspired Computing: On the Reliability of Spiking Neural Network using Emerging Non-Volatile Synapses

    Ming-Liang Wei 1,2, Hussam Amrouch 3, Cheng-Lin Sung 1, Hang-Ting Lue 1, Chia-Lin Yang 2, Keh-Chung Wang 1, Chih-Yuan Lu 1, 1-Macronix International Co., Ltd., 2-National Taiwan University, 3-University of Stuttgart

12. 3D.2 - Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET

    B. Narasimham, V. Chaudhary, M. Smith, L. Tsau, Broadcom Inc, D. Ball, B. Bhuva, Vanderbilt University

13. 4E.4 - Machine Learning on Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices

    Neel Chatterjee*‡, John Ortega*, Inanc Meric*, Peng Xiao*, Ilan Tsameret*, *Intel Corp., †University of Minnesota

14. 3B.3 - RF Reliability of SOI-Based Power Amplifier FETs for mmWave 5G Applications

    P. Srinivasan, F.Guarin, S. Syed, J. A. S. Jerome, W. Liu, S. Jain, D. Lederer, S. Moss, P. Colestock, A. Bandyopadhyay, N.Cahoon, B. Min, M. Gall, Globalfoundries Inc.