Circuit Reliability and Aging – Includes digital and analog circuit design for reliability, aging assessments and compact models from circuits to systems; use of EDA tools; radiation and electromagnetic effects on fresh and aged chips.

ESD and Latchup – Component and system-level ESD design, development and characterization. Latchup detection, prevention and mitigation. Includes numerical modeling, physics, simulation, troubleshooting and FA.

Packaging and 2.5D/3D Assembly – Includes chip-package interaction; fatigue; power dissipation issues; reliability of 2.5D and 3D IC packaging and integration, interconnects, multichip modules, passive interposers.

Product Reliability – Chip level reliability modeling, DFR, reliability aware design/monitor, EDA solution, reliability validation from Pre-Si to Post-Si for SOC, Chiplet, MCM and SIP; electrical, thermal, mechanical risk and electromagnetic effect for products in various markets.

Radiation Effects Reliability – Includes basic mechanism and impact analysis of radiation effects on components and systems; Component, system and application-level modeling, simulation, testing, and mitigation techniques for radiation effects induced reliability issues.

Reliability Testing – Includes reliability test development and design, new methodologies, novel analysis methods and techniques, reliability physics and failure mechanism, reliability test equipment, tools, and test structures.

RF/mmW/5G – RF reliability test and modeling of CMOS, BiCMOS, SiGe, GaN, III-V devices for GHz and THz applications for devices such as PA, LNA, mixers, and high-speed switches. Reliability of novel materials and device architectures for RF/mmW/5G and beyond.

System Electronics Reliability – Reliability of electronic systems used in consumer electronics, data centers, health care, space, automotive, etc.; architecture, design, modeling, telemetry, electromagnetic effects, and large-scale analysis techniques such as machine and deep learning.

Emerging memory – Novel memory devices based on magnetics (e.g., STT, SOT, VCMA), or resistive (selector or memory element) RAM, ferroelectrics, or phase change memory for eNVM or stand-alone applications.

Failure Analysis – Includes evidence of new failure mechanisms; advances in failure analysis techniques.

Gallium-Nitride and Silicon-Carbide Wide-Bandgap Semiconductors – threshold voltage instabilities, charge trapping, switching stress, breakdown and other reliability topics including thermal issues within power devices.

Gate/MOL Dielectrics – Includes reliability of novel gate dielectrics and ferroelectrics; 2D layered dielectrics and van der Waals dielectrics for 2D materials-based devices; modeling of dielectric breakdown; gate dielectric reliability for III-V, Ge, and advanced FETs; middle-of-the-line reliability; MIM/MOM capacitors.

Memory Reliability – Includes stand-alone volatile memories (SRAM, DRAM), planar and 3D NAND Flash memories, embedded memories (stand-alone and on-chip) and SSDs.

Metallization/BEOL Reliability – Includes electro-migration; Joule heating; stress migration; low-k dielectric breakdown.

Neuromorphic Computing Reliability – Reliability of logic and memory (MRAM, RRAM, PCM, Ferroelectrics, Flash, etc.) devices, and their interactions with materials, circuits, architectures, and algorithms used in NC and AI.

Process Integration – Includes manufacturing process such as PID/charging, anneals/implants etc. impact on component reliability, existing and new process-related reliability issues in production; foundry reliability challenges.

Transistors – Includes hot carrier phenomena; BTI; RTN; advanced node scaling; variability; Ge and III-V channels; nano-wire, gate all-around, nano-ribbon, fork-sheet devices.